• 전기학회논문지
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• 제67권4호
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• pp.538-542
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• 2018

In order to generate a clock source with low cost and high performance in system on chip(SoC), a relaxation oscillator with stable output characteristics according to PVT(process, voltage and temperature) fluctuation require a low area and a low power. In this paper, we propose a solution to reduce the current loss caused by parasitic components in the conventional relaxation oscillator. Since the slew rate of the bias current and the capacitor are adjusted to be the same through the proposed solution, a relaxation oscillator with low area characteristics is designed for the same clock source frequency implementation. The proposed circuit is designed using the TSMC CMOS 0.18um process. The Simulation results show that the relaxation oscillator using the proposed solution can prevent the current loss of about $279{\mu}A$ and reduce the total chip area by 20.8% compared with the conventional oscillator in the clock source frequency of 96 MHz.

• 한국산학기술학회논문지
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• 제11권2호
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• pp.485-490
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• 2010

본 논문에서는 버팅 콘택(butting contact) 구조를 갖는 DDI DRAM소자의 감지 증폭기의 입력 게이트 단의 모든 기생 성분을 포함한 등가 회로를 제안 하였다. 제안한 모델을 이용하여 기생 쇼트키 다이오드가 감지 증폭기 동작에 어떤 영향을 미치는지 분석하였다. 각각의 불량 가능성에 대해 감지 증폭기가 어떻게 동작하는지 분석하여 단측 불량 특성의 원인을 규명하였다. DDI DRAM에서 단측 불량 원인과 불량률의 온도 의존성은 감지 증폭기의 입력 게이트 단에 형성된 기생 쇼트키 다이오드 형성에 기인한 것으로 판단된다. 이러한 기생 쇼트키 다이오드는 게이트 입력에 기생 전압 강하를 야기하게 되고 결국 감지 증폭기의 노이즈 마진을 감소시켜 단측 불량률을 증가시킨다.

• ETRI Journal
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• 제41권6호
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• pp.715-730
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• 2019

We propose a switched beam-forming antenna that satisfies not only ultra-wideband characteristics but also beam-forming in the WLAN frequency band using an ultra-wideband antenna and passive parasitic elements applying a broadband optimal reactance load algorithm. We design a power and phase estimation function and an error correction function by re-analyzing and normalizing all the components of the parasitic array using control system engineering. The proposed antenna is compared with an antenna with a pin diode and reactance load value, respectively. The pin diode is located between the passive parasitic elements and ground plane. An antenna beam can be formed in eight directions according to the pin diode ON (reflector)/OFF (director) state. The antenna with a reactance load value achieves a better VSWR and gain than the antenna with a pin diode. We confirm that a beam is formed in eight directions owing to the RF switch operation, and the measured peak gain is 7 dBi at 2.45 GHz and 10 dBi at 5.8 GHz.

• 센서학회지
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• 제19권3호
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• pp.191-196
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• 2010

In this paper, modeling of the non-ideal frequency response, especially "notch-and-spike" magnitude phenomenon and phase lag distortion, are discussed. To characterize the non-ideal frequency response, a new electro-mechanical simulation model based on SPICE is proposed using the driving loop of the capacitive vibratory gyroscope. The parasitic components of the driving loop are found to be the major factors of non-ideal frequency response, and it is verified with the measurement results.

• ETRI Journal
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• 제31권6호
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• pp.778-783
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• 2009

To fabricate uniform and reliable thin gold stripes that provide low-loss optical waveguides, we developed a novel liftoff process placing an additional $SiN_x$ layer under conventional photoresists. By patterning a photoresist and over-etching the $SiN_x$, the photoresist patterns become free-standing structures on a lower-cladding. This leads to uniform metal stripes with good reproducibility and effectively removes parasitic structures on the edge of the metal stripe in the image reversal photolithography process. By applying the newly developed process to polymer-based gold stripe waveguide fabrication, we improved the propagation losses about two times compared with that incurred by the conventional image-reversal process.

• ETRI Journal
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• 제15권3_4호
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• 전력전자학회논문지
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• 제4권4호
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• pp.384-394
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• 1999

This paper deals with a fixed frequency full-bridge inverter type DC-DC high-power converter with high frequency high voltage(HFHV) transformer-coupled stage, which operates under quasi-resonant ZVS transition priciple in spite of a wide PWM-based voltage regulation processing and largely-changed load conditions. This multi-resonant(MR) converter topology is composed of a series capacitor-connected parallel resonant tank which makes the most of parasitic circuit reactive components of HFHV transformer and two additional quasi-resonant pole circuits incorporated into the bridge legs. The soft-switching operation and practical efficacy of this new converter circuit using the latest IGBTs are actually ascertained through 50kV trially-produced converter system operating using 20kHz/30kHz high voltage(HV) transformers which is applied for driving the diagnostic HV X-ray tube load in medical equipments. It is proved from a practical point of view that the switching losses of IGBTs and their electrical dynamic stresses relating to EMI noise can be considerably reduced under a high frequency(HF) switching-based phase-shift PWM control process for a load setting requirements.

• Journal of Power Electronics
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• 제6권1호
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• pp.73-82
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• 2006

Plasma display panels (PDPs) have a serious thermal problem, because the luminance efficiency of a conventional PDP is about 1.5 1m/W and it is less than $3\~5\;lm/W$ of a cathode ray tube (CRT). Thus there is a need for improving the luminance efficiency of the PDP. There are several approaches to improve the luminance efficiency of the PDP and we adopted a driving PDP at high frequency range from 400kHz up to over 700kHz. Since a PDP is regarded as an equivalent inherent capacitance, many types of sustaining drivers have been proposed and widely used to recover the energy stored in the PDP. However, these circuits have some drawbacks for driving PDPs at high frequency ranges. In this paper, we investigate the effect of the parasitic components on the PDP itself and on the driver when the reactive energy of the panel is recovered. Various drivers are classified and evaluated based on their suitability for high frequency drivers. Finally, a current-fed driver with a DC input voltage bias is proposed. This driver overcomes the effect of parasitic components in the panel and driver. It fully achieves a ZVS of all full-bridge switches and reduces the transition time of the panel polarity. It is tested to validate the high frequency sustaining driver and the experimental results are presented.

• 전기전자학회논문지
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• 제21권3호
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• pp.260-263
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• 2017

다종의 CPU를 기반으로 ADC와 DC-DC 변환기를 포함하며 2M-byte의 SRAM이 내장된 SoC가 제안되었다. CPU 코어는 12-bit MENSA 코어, 32-bit Symmetric Multi-core 프로세서, 16-bit CDSP로 구성된다. 외부 SDRAM 메모리를 제거하기 위해 내부의 2M-byte SRAM을 설계하였으나 SRAM 블록들이 넓은 영역에 분포하여 기생 성분에 의해 속도가 저하되므로 SRAM을 작게 분할하여 레이아웃 하였다. 설계된 SoC는 55nm 공정으로 개발되었으며 속도는 200MHz이다.

• 전력전자학회논문지
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• 제26권3호
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• pp.176-182
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• 2021

This research proposes a high-frequency circuit that can accurately predict the differential mode noise of single-phase inverters at the circuit design stage. Proposed single-phase inverter high frequency circuit in the work is a form in which harmonic impedance components are added to the basic single-phase inverter circuit configuration. For accurate noise prediction, parasitic components present in each part of the differential noise path were extracted. Impedance was extracted using a network analyzer and Q3D in the measurement range of 150 kHz to 30 MHz. A high-frequency circuit model was completed by applying the measured values. Simulations and experiments were conducted to confirm the validity of the high-frequency circuit. As a result, we were able to predict the resonance point of the differential mode voltage extracted as an experimental value with a high-frequency circuit model within an approximately 10% error. Through this outcome, we could verify that differential mode noise can be accurately predicted using the proposed model of the high-frequency circuit without a separate test bench for noise measurement.