• 한국항행학회논문지
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• 제15권4호
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• pp.596-601
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• 2011

본 논문에서는 간단한 회로구조와 높은 효율을 갖는 스위칭 방식의 E급 주파수 체배기에 대한 연구를 수행하였다. 주파수 체배는 능동소자의 비선형성에 의해 발생하는데 본 논문에서는 FET 능동소자를 간단한 스위치 및 기생소자 성분 모델로 근사하여 특성을 해석하고자 하였다. FET를 입력에 의해 동작하는 스위치 및 기생소자로 모델링하고 E급 주파수 체배기의 정합소자 값을 유도하였다. ADS시뮬레이터를 이용하여 출력 전압과 전류 파형 및 효율을 시뮬레이션하고 기생성분에 따른 변화를 연구하였다. 기생 커패시턴스, 저항, 인덕턴스에 의한 영향을 시뮬레이션하였으며 입력주파수 2.9GHz, 바이어스전압 2V일 때, 출력주파수 5.8GHz에서 기생커패시턴스가 0pF에서 1pF으로 변화함에 따라 드레인효율은 98%에서 28%로 감소하여 기생커패시턴스 CP가 FET의 기생 성분 중 가장 큰 영향을 끼친 것을 확인했다.

• ETRI Journal
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• 제15권3_4호
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.367-372
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• 1999

In this paper, an inverter fed induction motor drive system is analyed in order to predict the conducted interference. High frequency model for inverter, motor and system parasitic components are proposed. High frequency component allows time and frequency domain analysis to be performed with standard PSpice tool. The overall high frequency component and model are verified by comparing simulation and experimental result.

• 전기학회논문지
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• 제65권10호
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• pp.1664-1671
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• 2016

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

• Journal of Power Electronics
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• 제19권2호
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• pp.591-601
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• 2019

With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.

• 대한기계학회논문집B
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• 제32권5호
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• pp.359-366
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• 2008

A two-dimensional thermal model of proton exchange membrane fuel cell with large active area is developed to investigate the performance of fuel cell with large active area over various thermal management conditions. The core sub-models of the two-dimensional thermal model are one-dimensional agglomerate structure electrochemical reaction model, one-dimensional water transport model, and a two-dimensional heat transfer model. Prior to carrying out the simulation, this study is contributed to set up the operating temperature of the fuel cell with large active area which is a maximum temperature inside the fuel cell considering durability of membrane electrolyte. The simulation results show that the operating temperature of the fuel cell and temperature distribution inside the fuel cell can affect significantly the total net power at extreme conditions. Results also show that the parasitic losses of balance of plant component should be precisely controlled to produce the maximum system power with minimum parasitic loss of thermal management system.

• 대한기계학회논문집B
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• 제40권2호
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• pp.85-91
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• 2016

내연기관 자동차와 달리 전기자동차는 배터리 폐열이 부족하여 실내 난방을 위해 추가적으로 PTC 히터를 사용하고 있지만 전력소모가 큰 단점이 있다. 최근 이러한 단점을 보완할 수 있는 히트펌프 적용에 관한 연구가 활발히 진행되고 있다. 본 연구에서는 히트펌프의 운전특성 해석을 위해 MATLAB/SIMULINK$^{(R)}$환경에서 R134a 히트펌프 모델과 캐빈 모델을 개발하였다. 모델은 여름과 겨울에서 히트펌프의 작동 특성에 따른 실내 온도변화를 나타낼 수 있으며, 모델 검증은 구성품 수준에서 응축기와 증발기의 용량 비교를 수행하였다. 또한 동일한 냉방조건에서 캐빈온도 변화 비교를 통해 캐빈 모델을 검증하였다. 해석 결과 전동압축기 소비전력은 모든 외기온도 조건에서 PTC 히터 보다 낮은 것으로 나타났다. 또한 영하조건에서 히트펌프의 난방용량이 부족한 현상에 대해 폐열회수를 적용하여 효율적인 난방 작동을 할 수 있는 조건을 분석하였다.