• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.61-61
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• 1996

• 전자공학회논문지A
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• 제32A권7호
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• pp.77-84
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• 1995

We studied the effects of the Zr/Ti ration and the bottom electrode (Pt or ITO) on the electrical properties of PZT thin films prepared by sol-gel method. Their permittivities and tagent losses with the variation of frequencies were measured by the LCR meter and their maximum polarizations, remanent polarizations, and coercive fields were obtained from the hysteresis loops measured by the Sawyer-Tower circuit. For the PZT thin film of the Zr/Ti ration of 53/47, permittivity at 10kHz, coercive field, maximum and remanent polarizations ere measured as 952, 20.7kV/cm, 10.43${\mu}C/cm^{2}$ and 4.3${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ration of 25/75, coercive field, maximum and remanent polarizations were measured as 33.12kV/cm, 5.59${\mu}C/cm^{2}$ and 1.5${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ratio of 75/25, they were measured as 23.8kV/cm, 7.45${\mu}C/cm^{2}$, and 3.5${\mu}C/cm^{2}$, repectively. Our investigation into the effects of the lower electrode on the electrical properties of PZT films showed the following results. The permittivities of the PZT films deposited on the ITO electrode decreased more quickly than those of the PZT films on the Pt electrode. The tangent losses of the former films increased more quickly than those of the latter. These may be due to the degradation of the quality of the interface between the electrode and the film, which results from the diffusion of Pb. It is also noticeable that permittivities and tangent losses of the PZT films deposited on the ITO electrode varied differently with the Zr/Ti ratio. This may indicate that the quality of the interface between the electrode and the film changes with the Zr/Ti ration of the PZT film.

• 한국재료학회지
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• 제12권1호
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• pp.75-81
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• 2002

The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.123-124
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• 2006

The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• Bulletin of the Korean Chemical Society
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• 제23권8호
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• pp.1078-1084
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• 2002

The formation temperature for the perovskite lead zirconate titanate [Pb(Zr,Ti)O3, PZT] derived from sol-gel route was lowered by more than $100^{\circ}C$ with the addition of crystallographically suitable seed particles, such as barium titanat e (BT) or PZT. We investigated the effect of seeding on the crystallization of perovskite phase and in the microstructure of the sol-gel derived PZT powder by varying the concentration, size and chemical species of seed particles. The phase transition as a function of temperature was monitored by DTA, XRD, and Raman spectroscopy, and the interface between the seed particle and grown PZT layer was analyzed by SEM and high resolution TEM techniques. It was found that both the heterogeneous and homogeneous nucleation contributes competitively in the formation of perovskite PZT grains.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1771-1773
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• 1999

Ferroelectric PZT(10/90)/(90/10)heterolayered thin films were fabricated by the alkoxide-based Sol-Gel method Electric and dielectric properties of PZT(10/90)/(90/10) heterolayered thin films have been investigated, focusing on the effect of PZT/PZT and PZT/electrode interface on the heterolayered films. Dielectric constant increased with increasing the number of coatings. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered thin films deposited on Pt/Ti/$SiO_2$/Si were $7.18{\mu}C/cm$, $68.5kV/cm^2$, respectively. Leakage current, densities were increased with increasing the number of coatings, and the value of the PZT-4 film deposited on the Pt/Ti/$SiO_2$/Si substrate was about $7{\times}10^{-8}A/cm^2$ at 0.05MV/cm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 합동춘계학술대회 논문집 전기물성,응용부문
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• pp.169-170
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• 2008

The heterolayered PZT/PT thick films were fabricated by two different methods - thick films of the PZT by screen printing method on alumina substrates electrodes with Pt, thin films of $PbTiO_3$ by the spin coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $PbTiO_3$ coating solution at interface of the PZT thick films. The insertion of $PbTiO_3$ interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $PbTiO_3$ layers. The leakage current density of the PZT/$PbTiO_3-1$ film is less that $4.41{\times}10^{-9}\;A/cm^2$ at 5 V.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.458-464
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• 1998

This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

• 전자공학회논문지A
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• 제32A권12호
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• pp.101-107
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• 1995

To improve the leakage current, we developed two step sputtering method where PZT thin film in first deposited at room temperature followed by 600.deg. C deposition. The method used an amorphous PZT layer deposited at room temperature to keep a stable interface during sputtering at high temperature. PZT thin films were deposited on Pt/Ti/SiO$_{2}$/Si substrate at room temperature and 600.deg. C sequentially. The effect of the layer deposited at room temperature was investigated with regard to I-V characteristics and P-E hysteresis loop. In the case of the sample with the layer deposited at room temperature, both leakage current and dielectric constant were decreased. The thicker the layer deposited at room temperature was, the lower dielectric constant was. However, leakage current was indepenent of the variation of the thickness ratio. The sample with 200$\AA$ of the layer deposited at room temperature showed the most promising results in both dielectric constant and leakage current.