A Study on the Electrical Properties of PZT(10/90)/(90/10) Heterolayered Thin Films for FRAM Application

FRAM 응용을 위한 PZT(10/90)/(90/10)이종층 박막의 전기적 특성에 관한 연구

  • 김경태 (광운대학교 전자재료공학과) ;
  • 임성수 (광운대학교 전자재료공학과) ;
  • 박인길 (신성대학 전자과) ;
  • 이성갑 (서남대학교 전자전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 1999.07.19

Abstract

Ferroelectric PZT(10/90)/(90/10)heterolayered thin films were fabricated by the alkoxide-based Sol-Gel method Electric and dielectric properties of PZT(10/90)/(90/10) heterolayered thin films have been investigated, focusing on the effect of PZT/PZT and PZT/electrode interface on the heterolayered films. Dielectric constant increased with increasing the number of coatings. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered thin films deposited on Pt/Ti/$SiO_2$/Si were $7.18{\mu}C/cm$, $68.5kV/cm^2$, respectively. Leakage current, densities were increased with increasing the number of coatings, and the value of the PZT-4 film deposited on the Pt/Ti/$SiO_2$/Si substrate was about $7{\times}10^{-8}A/cm^2$ at 0.05MV/cm.

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