• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.688-692
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• 2017

$Pb(Zr,\;Ti)O_3$ (PZT) is a piezoelectric material applied in a typical actuator and has been actively studied. However, in order to overcome the limitations of PZT, piezoelectric ceramics comprising mixed solid solutions of PZT with various relaxer electric materials have been studied. The $Pb(Zn_{1/3}Nb_{2/3})-Pb(Ni_{1/3}Nb_{2/3})-Pb(Zr,\;Ti)O_3$ (PZN-PNN-PZT) piezoelectric ceramic, known to have high piezoelectric constant and electromechanical coupling coefficient, was studied herein. The piezoelectric characteristics with various Zr contents (Zr/Ti ratios), PZN molar ratios, and sintering temperatures were compared. The piezoelectric properties of $d_{33}=580pC/N$ and $k_P=0.68$ were obtained with the $0.1PZN-0.2PNN-0.7PbZr_{0.46}Ti_{0.54}O_3$ composition sintered at $1,290^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Bulletin of the Korean Chemical Society
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• v.19 no.8
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• pp.830-835
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• 1998

The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.275-278
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• 2010

We have examined the Ferroelectric properties of $PbZr_{0.4}Ti_{0.6}O_3$ (PZT) grains by monitoring the surface potential through the utilization of Kelvin force microscopy. Hysteretic and time dependent behaviors of small and large grains were compared with each other. The smaller grain yields had smaller values of surface potential. However, the normalized voltage versus surface potential behavior indicates that the smaller grains became saturated earlier with respect to the writing voltages than did the larger grains. On the other hand, the surface potential hysteresis loop obtained from the smaller grains showed a similar shape to what might be obtained from a Zr rich PZT film. In contrast the hysteresis loop of the larger grain looks like that obtained from a Ti-rich film. In addition, the time dependent behaviors of the smaller grains also revealed a better response than the response of larger grains. The overall ferroelectric properties of the smaller grains seem better than corresponding properties for larger grains. The Ti/Zr ratio of the PZT film which was examined in this study was 60/40.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.814-817
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• 2005

In order to enhance energy efficiency in high electric conversion devices such as Power transformers, which need to have high power properties, an alloy design approach in $Pb(Zr,Ti)O_3(PZT)$ base ceramic system was attempted $0.03Pb(Sb_{0.5}Nb_{0.5})O_3-0.03Pb(Mn_{1/3}Nb_{2/3})O_3-(0.94-x)PbTiO_3-xPbZrO_3$[PSN-PMN- PZT] ceramics were synthesized by conventional bulk ceramic processing technique. To improve power properties, the various Zr/Ti ratio was varied ]lear their morphotropic phase boundary (MPB) composition of PSN-PMN-PZT system and their effects on subsequent piezoelectric and dielectric properties for the transformer application at high power were systematically investigated using an impedance analyzer. Microstructure and phase information were characterized using X-ray diffractometer (XRD), a scanning electron microscope (SEM) and others. When the Zr/Ti ratio was 0.415/0.465, the value of $Q_m\;and\;k_p$ were shown to reach to the maximum, indicating that this alloy design can be a feasible composition :or high power transformer.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.694-698
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• 1988

Pb(Zr, Ti)O3-Pb(Co, Nb)O3 systems were investigated by x-ray diffraction method. System contains rhombohedral, tetragonal, and pseudocubic structures at room temperature. Crystal symmetry was changed from 4-fold symmetry to 3-fold symmetry by substituting Pb(Co1/3, Nb2/3)O3 ; PCN, to Pb(Zr0.52, Ti0.48)O3 ; PZT. As the substituted PCN concentration was increased, an increase in a-axis direction and a decrease in c-axis in the perovskite structure were occurred simultaneously, so that the crystal symmetry was changed into such way. In the higher sinteringtemperatures, the unit cell distortions occurred rather in the lower substitution range of PCN. The ferroelectric properties were maximized at the region that tetragonal and rhombohedral or pseudocubic structures were coexist.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.904-911
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• 2001

High-density lead zirconate titanate(Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$, PZT) ceramics were fabricated by a new milling-precipitation(MP) process improved from the conventional solid state process. This process was progressed by a milling impregnation through mixing ZrO$_2$ and TiO$_2$ powders with lead nitrate(Pb(NO$_3$)$_2$) water solution in zirconia ball media, and then milling precipitation was induced from precipitation of PbC$_2$O$_4$ by adding ammonium of oxalate monohydrate((NH$_4$)$_2$C$_2$O$_4$$.$H$_2$O) as a precipitant. As a result of this process, single-phase perovskite structure was formed at the calcination temperature of 750$\^{C}$ for Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$ powders. In addition, the highest density at the sintering temperature of 1100$\^{C}$ was obtained, because of the highly sinterable PZT Powders ground through the re-milling process. Piezoelectric and dielectric properties of sintered sample were improved by MP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.35-36
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• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the Pb($Zr_xTi_{1-x}$)$O_3$(PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were PZT(70/30) and PZT(30/70), respectively. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 15M, 6-time coated showed the 698. The remanent polarization of the 1.5M, 6-time coated PZT thick films was 38.3 ${\mu}C/cm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.338-343
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• 2005

Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 ％), those on a randomly oriented LNO show a random crystal orientation (F=60 ％). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1448-1449
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• 2006

Pb(Zr,Ti)$O_3$ is one of the most attractive ferroelectric materials for realizing the FeRAM due to its higher remanant polarization and the ability to withstand higher coercive fields. Generally, the ferroelectric materials were patterned by a plasma etching process for high-density FeRAM. The applicable possibility of CMP process to pattern Pb(Zr,Ti)$O_3$ instead of plasma etching process was investigated in our previous study for improvement of an angled sidewall which prevents the densification of ferroelectric memory and is apt to receive the plasma damage. Our previous study showed that good removal rate with the excellent surface roughness compared to plasma etching process were obtained by CMP process for the patterning of Pb(Zr,Ti)$O_3$. The suitable selectivity to TEOS without any damage to the structural property of Pb(Zr,Ti)$O_3$ was also guaranteed. In this study, the removal mechanism of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ coated by sol-gel method was investigated. Surface analysis of polished specimens at the best and worst conditions was carried out by XPS.