• 제목/요약/키워드: PSG

검색결과 219건 처리시간 0.032초

ISPM 및 PBMS를 이용한 BPSG 및 PSG CVD 공정 중 발생하는 오염입자의 실시간 측정 (Real-time Contaminant Particle Monitoring for Chemical Vapor Deposition of Borophosphosilicate and Phosphosilicate Glass Film by using In-situ Particle Monitor and Particle Beam Mass Spectrometer)

  • 나정길;최재붕;문지훈;임성규;박상현;이헌정;채승기;윤주영;강상우;김태성
    • 한국입자에어로졸학회지
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    • 제6권3호
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    • pp.139-145
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    • 2010
  • In this study, we investigated the particle formation during the deposition of borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG) films in thermal chemical vapor deposition reactor using in-situ particle monitor (ISPM) and particle beam mass spectrometer (PBMS) which installed in the reactor exhaust line. The particle current and number count are monitored at set-up, stabilize, deposition, purge and pumping process step in real-time. The particle number distribution at stabilize step was measured using PBMS and compared with SEM image data. The PBMS and SEM analysis data shows the 110 nm and 80 nm of mode diameter for BPSG and PSG process, respectively.

Dielectric Passivation and Geometry Effects on the Electromigration Characteristics in Al-1%Si Thin Film Interconnections

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • 제5권1호
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    • pp.11-18
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    • 2001
  • Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

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A1-1%Si 박막배선에서 엘렉트로마이그레이션 현상에 미치는 절연보호막 효과 (Dielectric passivation effects on the electromigration phenomena in Al-1%Si thin film interconnections)

  • 김경수;김진영
    • 한국진공학회지
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    • 제10권1호
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    • pp.27-30
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    • 2001
  • 절연보호막 처리된 Al-1%Si 박막배선에서 DC와 PDC 조건하에서의 Electromigration 현상에 관하여 조사하였다. $SiO_2$와 PSG/$SiO_2$ 절연보호막 층을 갖는 박막배선은 표준 사진식각 공정으로 제작되었고, 테스트라인 길이는 100, 400, 800, 1200, 1600 $\mu\textrm{m}$이다. Al-l%Si 박막배선에 고정된 전류밀도 $1.19\times10^7\textrm{A/cm}^2$의 DC와 duty factor가 0.5인 1Hz의 주파수에 고정된 전류밀도 $1.19\times10^7\textrm{A/cm}^2$의 PDC를 인가하였다. Electromigration 테스트에서 PSG/$SiO_2$ 절연보호막 시편의 Electromigration 저항성이 $SiO_2$ 절연보호막 시편보다 우수함을 알 수 있었다. PDC 에서 박막 배선의 수명이 DC 보다 2-4배 정도 길게 나타났으며, 박막 배선의 길이가 증가 할 수록 수명이 감소하다가 임계길이 이상에서 포화되는 경향을 보인다. Electromigration에 의한 결함 형태로는 전기적 개방을 야기시키는 보이드와 전기적 단락을 야기시키는 힐록이 지배적이다.

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Effects of Pinitol Supplementation and Strength Training on Anaerobic Performance and Status of Energy Substrates in Healthy Young Men

  • Lee, Dae-Taek;Lee, Woon-Yong
    • Nutritional Sciences
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    • 제8권3호
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    • pp.189-195
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    • 2005
  • To assess the effect of pinitol supplementation and strength training for two weeks on the anaerobic capacity during and after exercise, and improvement of glucose metabolism during the recovery period of muscular fatigue with repeated acute bouts of cycling exercise, a total of 24 healthy young men were recruited and randomly and equally divided into three groups; pinitol supplementation group (PSG), placebo group (PLG), and control group (CON). Using a randomized double-blinded design, subjects in PSG were provided pinitol supplement, consumed orally 1.2 g/day, and participated in the resistance exercise program and cycling exercise for two weeks. Subjects in PLG underwent the same protocol as those in PSG but consumed the same amount of placebo. No supplementation and exercise program was given to CON. Before and after the intervention, all subjects were tested for their anaerobic capacities evaluated by Wingate test twice separated by 30 min. During the test, peak anaerobic power (PP), mean anaerobic power, total work, and fatigue index were evaluated During resting and recovery, blood samples were drawn and plasma pinitol, myo-inositol, chiro-inositol, insulin, free fatty acid, glucose, and lactate levels were analyzed After two weeks, PP and relative PP of the second biking were improved from the first biking in PSG only (p<0.05). No changes were found in all other variables of Wingate test in all groups. No statistical differences between groups and pre- and post-intervention were observed in concentrations of pinitol, myo-inositol, and chiro-inositol, but pinitol concentration was higher during recovery compared to the baseline in all groups and testings (p<0.05). Lactate level during recovery was higher than the resting level, but no other blood parameters were significantly changed. In conclusion, two weeks of pinitol supplementation in conjunction with short duration of anaerobic training in healthy young men did not induce any obvious benefits in terms of anaerobic capacity and energy metabolism Individual and/or population susceptibility may be one factor responsible for adopting pinitol supplementation.

Seminal reactive oxygen species and total antioxidant capacity: Correlations with sperm parameters and impact on male infertility

  • Subramanian, Vidyalakshmi;Ravichandran, Aishwarya;Thiagarajan, Nivethitha;Govindarajan, Matheswari;Dhandayuthapani, Silambuchelvi;Suresh, Sujatha
    • Clinical and Experimental Reproductive Medicine
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    • 제45권2호
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    • pp.88-93
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    • 2018
  • Objective: The aim of this study was to measure reactive oxygen species (ROS) production and total antioxidant capacity (TAC) in the seminal fluid of the male partners in couples undergoing intrauterine insemination and to evaluate correlations between these values and their semen parameters. Methods: The study was conducted at Vamsam Fertility Center, Coimbatore, India and enrolled 110 male patients from whom semen samples were collected. ROS production was measured by a thiobarbituric acid reactive species assay, and TAC was measured by a 2,2-diphenyl-2-picrylhydrazyl free radical assay. The differences in the TAC and malondialdehyde (MDA) levels between the subfertile and fertile groups were analysed. Correlations between sperm parameters and TAC and MDA levels were statistically analysed, and cutoff values with respect to the controls were determined. All hypothesis tests used were two-tailed, with statistical significance assessed at the level of p< 0.05. Results: A total of 87 subfertile and 23 fertile men were included in the study. The mean MDA level was significantly higher in the subfertile subjects than in the fertile subjects, and the mean antioxidant level was significantly lower in the subfertile subjects than in the fertile subjects. Seminal MDA levels were negatively associated with sperm concentration, motility, and morphology, whereas the opposite was seen with TAC levels. Conclusion: Measurements of seminal TAC and ROS are valuable for predicting semen quality, and hence predicting the outcomes of fertility treatment.

PSG막의 급속열처리 방법을 이용한 LDD-nMOSFET의 구조 제작에 관한 연구 (A Study on the Structure Fabrication of LDD-nMOSFET using Rapid Thermal Annealing Method of PSG Film)

  • 류장렬;홍봉식
    • 전자공학회논문지A
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    • 제31A권12호
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    • pp.80-90
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    • 1994
  • To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

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Statistical Qualitative Analysis on Chemical Mechanical Polishing Process and Equipment Characterization

  • Hong, Sang-Jeen;Hwang, Jong-Ha;Seo, Dong-Sun
    • Transactions on Electrical and Electronic Materials
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    • 제12권3호
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    • pp.115-118
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    • 2011
  • Process characterization of the chemical mechanical polishing (CMP) process for undensified phosphosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been addressed to experimenters to understand the relationship between input variables and responses of interest in a simple and efficient way. It is typically beneficial for determining the adequate size of experiments with multiple process variables and making statistical inferences for the responses of interests. Equipment controllable parameters to operate the machine include the down force (DF) of the wafer carrier, pressure on the backside of the wafer, table and spindle speed (SS), slurry flow rate, and pad condition. None of them is independent; thus, the interaction between parameters also needs to be indicated to improve process characterization in CMP. In this paper, we have selected the five controllable equipment parameters, such as DF, back pressure (BP), table speed (TS), SS, and slurry flow (SF), most process engineers recommend to characterize the CMP process with respect to material removal rate (RR) and film uniformity as a percentage. The polished material is undensified PSG. PSG is widely used for the plananization in multi-layered metal interconnects. We identify the main effect of DF, BP, and TS on both RR and film uniformity, as expected, by the statistical modeling and analysis on the metrology data acquired from a series of $2^{5-1}$ fractional factorial design with two center points. This revealed the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that the process control based on better understanding of the process is the key to success in semiconductor manufacturing, typically when the wafer size reaches 300 mm and is continuously scheduled to expand up to 450 mm in or little after 2012.

PSG 광도파박막을 이용한 $1.3/1.55\mum$ WDM coupler의 설계 및 제작 (Design and fabrication of the $1.3/1.55\mum$ WDM coupler with the PSG waveguide films)

  • 전영윤;김한수;이용태;이형종
    • 한국광학회지
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    • 제6권4호
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    • pp.310-316
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    • 1995
  • 유한영역에서의 조화함수전개법으로 인접한 두 도파로 코어 중심간의 거리 및 도파로 변수에 따른 결합길이를 계산하여 $1.3/1.55\mum$ WDM coupler을 설계하였다. 저압화학기상증착법에 의해 PSG 도파박막을 제작하고 laser lithography와 $CF_4/O_2$ RIE 공정 등을 이용하여 WDM coupler를 제작하였다. 또한 광섬유를 지지 및 고정하기 위하여 Si 기판 위에 V-groove를 만들었으며 제작된 WDM coupler와 V-groove로 지지된 광섬유를 UV curing epoxy를 사용하여 접속하였다. 제작된 WDM coupler의 $1.3.\mum$, $1.55\mum$에서의 분지별 도파모드를 관측하고 분할비를 측정한 결과 최대 분할비는 각각 9dB, 12dB였다.

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PVDF 필름 기반 센서를 이용한 정상인 및 폐쇄성 수면 무호흡증 환자에서의 무구속적인 렘 수면 모니터링 (Unconstrained REM Sleep Monitoring Using Polyvinylidene Fluoride Film-Based Sensor in the Normal and the Obstructive Sleep Apnea Patients)

  • 황수환;윤희남;정다운;서상원;이유진;정도언;박광석
    • 대한의용생체공학회:의공학회지
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    • 제35권3호
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    • pp.55-61
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    • 2014
  • In sleep monitoring system, polysomnography (PSG) is the gold-standard but previous studies revealed that attaching numerous amount of sensors disturb sleep during the test which is the fundamental disadvantage of PSG. We suggest an unconstrained rapid-eye-movement (REM) sleep monitoring method measured with polyvinylidene (PVDF) film-based sensor for the normal and the obstructive sleep apnea (OSA) patients. Nine normal subjects and seventeen OSA patients have participated in the study. During REM sleep, rate and variability of respiration are known to be greater than in other sleep stages. Based on this phenomena, respiratory signals of participants were unconstrainedly measured using the PVDF-based sensor with the PSG and REM sleep were extracted from the average rate and variability of respiration. In epoch-by-epoch REM sleep detection, proposed method classified REM sleep with an average sensitivity of 72.3%, specificity of 92.5%, accuracy of 88.9%, and kappa statistic of 0.60 compared to the results of PSG. Student's t-test showed no significant difference between the results of normal and OSA group. This method is potentially applicable to REM sleep detection in homing environment or ambulatory monitoring.