• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.2 s.245
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• pp.136-143
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• 2006

A particle image velocimetry (PlV) technique has been applied to measure the quantitative flow field characteristics behind a road vehicle with/without an air spoiler attached on its trunk and to estimate its effect on the wake. A vehicle model scaled in the ratio of 1/43 is set up in the mid-section of a closed-loop water tunnel. The Reynolds number based on the vehicle length is $10^5$. To investigate the three-dimensional structure of the recirculation zone and vortices, measurements are carried out on the planes both parallel and perpendicular to the free stream, respectively. The results show significant differences in the recirculation region and the vorticity distributions according to the existence of the air spoiler. The focus and the saddle point, appearing just behind the air spoiler, are disposed differently along the spanwise direction. Regarding the streamwise vortices, the air spoiler produces large wing tip vortices. They have opposite rotational directions to C-pillar vortices which are commonly observed in case that the air spoiler is absent. The wing tip vortices generate the down-force and as a result, they can make the vehicle more stable in driving.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.99-99
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• 2003

The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.165-165
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• 2003

The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.147-151
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• 2011

We were analyzed the piezoelectric characteristic for electronics printing to inkjet printing system. These applications were possible use to Actuator, MEMS, FPCB, RFID, Solar cell and LCD color filter etc. Piezoelectric print head is firing from ink droplet control consideration ink viscosity properties. At this time, micro pattern for PCB metal printing was possible by droplet control of piezoelectric driving. These driving characteristics are variable voltage pulse waveform. We are used the piezoelectric analysis software of Finite Element Method (FEM), Piezoelectric design parameters are acquired from piezoelectric analysis, and measurement of piezoelectric. It designed for piezoelectric head to possible electric print pattern of inkjet printing system. For this validity we were established through in comparison with simulation and measurement. Designed piezoelectric specification obtained voltage 98V, firing frequency 10 kHz, resolution 360dpi, drop volume 20pl, nozzle number 256, and nozzle pitch 0.33 mm.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.11
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• pp.2999-3007
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• 1994

The unsteady numerical simulations have been presented for the laminar natural convection in a partially open compartment. Computations were performed within the domain of the compartment in order to show the thermal radiation and the partially opening effects on the flow fields and heat transfer characteristics. The results were shown for different Planck numbers(0.05~5) and opening ratios(0.25~0.75) being fixed with Ra=$10^5$ and Pr=0.71. Considering the flow which is buoyancy driven from the heated wall, and the buoyancy is not much affected by the further outside region from the opening, the numerical computations have been performed without an outer region by the particular boundary treatments on the flow velocity and temperature at the different partial openings. The confined numerical domain reduced the CPU time and the memory of computer. P-1 approximation of radiative transfer equation was employed with Marshak type boundary conditions along with the pseudo-black body approximation at the partial openings. The numerical results clearly show that the natural convective flow and heat transfer are much affected by increase of thermal radiation particularly from the initial state. When thermal radiation is not much affecting the flow ($PL{\le}1$), it was found that thermal radiation effects are almost negligible.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.7
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• pp.842-851
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• 2007

Oscillating foil propulsion, the engineering application of fish-like movement of a hydrofoil, has received in recent decades as a possible competitor for propellers. The oscillating foil produces an effective angle of attack, resulting in a normal force vector with thrust and lift components, and it can be expected to be a new highly effective propulsion system. We have explored propulsion hydrodynamics as a concept in wake flow pattern. The present study has been examined various conditions such as oscillating frequencies and amplitudes in NACA0010 profile. Flow visualizations showed that high thrust was associated with the generation of moderately strong vortices, which subsequently combine with trailing-edge vorticity leading to the formation of a reverse $K\acute{a}rm\acute{a}n$ vortex street. Vortex generation was inherent to jet production and playeda fundamental role in the wake dynamics. And it was shown that the strong thrust coefficient obtained as the Strouhal number was larger.

• Journal of the Korean Applied Science and Technology
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• v.17 no.1
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• pp.63-66
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• 2000

Organic Electroluminescent devices(OELD) consisted of multilayer structures have been studied for the application the application to flat-panel display. Metal-chelate complexes, zinc bis(2-(2-hydroxyphenyl)benzoxazolate) ($Zn(BOX)_{2}$) and zinc bis(2-(2-hydroxyphenyl)benzothiazolate) ($Zn(BOX)_{2}$), have been intensively investigated as an white-light emitting layer and recognized to have good electroluminescent(EL) properties. In this study, ($Zn(BOX)_{2}$) and ($Zn(BTZ)_{2}$) were synthesized and characterized by FT-IR, $^{1}H-NMR$, UV-VIS and PL. Their EL properties were also studied and their ionization potential(IP) and electron affinity(EA) were also measured by cyclic voltammetry(CV).

• Journal of the Korea Convergence Society
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• v.6 no.6
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• pp.213-219
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• 2015

This study examines how the features of communication on Social Network Service(SNS) affect building faculty trust and long-term orientation in professor-student relationships. The research model was developed based on the previous research about communication, SNS and relationship development. The researcher surveyed 210 students to collect research data, and 195 questionnaires were analyzed using SmartPLS. The results indicate that the quality, frequency, interactivity and openness of communication on SNS affect positively on faculty trust. Moreover, the quality, frequency and openness of communication on SNS affect positively on long-term orientation, whereas interactivity does not. This mean that faculty trust plays a mediating role between interactivity and long-term orientation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1139-1142
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• 2005

Recently, organic light emitting diodes(OLEDs) is widely used as one of the information display techniques. We synthesized 2-(2-hydroxyphenyl)benzoxazole($Zn(HPB)_2$). We studied the luminescent properties of OLEDs using $Zn(HPB)_2$. The ionization potential(IP) and the electron affinity(EA) of $Zn(HPB)_2$ investigated using cyclic-voltammetry(C-V). The IP and EA were 6.5 eV and 3.0 eV, respectively. The PL and EL spectra of $Zn(HPB)_2$ were observed at the wavelength of 450 nm. We used $Zn(HPB)_2$ as an emitting layer and hole blocking layer. At the experiment about hole blocking effect, we inserted $Zn(HPB)_2$ between emiting material layer(EML) and cathode, and between hole transport layer(HTL) and emitting material layer(EML). We measured current density-voltage and luminance-voltage characteristics at room temperature.