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Study on Properties of OLEDS using Zn(HPB)2 as Hole Blocking Layer

Zn(HPB)2를 Hole Blocking Layer로 이용한 OLEDS의 특성 연구

  • 김동은 (동아대학교 전기공학과) ;
  • 김두석 (동아대학교 항만물류시스템학과) ;
  • 이범종 (인제대학교 화학과) ;
  • 권영수 (동아대학교 전기공학과, 동아대학교 항만물류시스템학과)
  • Published : 2005.12.01

Abstract

Recently, organic light emitting diodes(OLEDs) is widely used as one of the information display techniques. We synthesized 2-(2-hydroxyphenyl)benzoxazole($Zn(HPB)_2$). We studied the luminescent properties of OLEDs using $Zn(HPB)_2$. The ionization potential(IP) and the electron affinity(EA) of $Zn(HPB)_2$ investigated using cyclic-voltammetry(C-V). The IP and EA were 6.5 eV and 3.0 eV, respectively. The PL and EL spectra of $Zn(HPB)_2$ were observed at the wavelength of 450 nm. We used $Zn(HPB)_2$ as an emitting layer and hole blocking layer. At the experiment about hole blocking effect, we inserted $Zn(HPB)_2$ between emiting material layer(EML) and cathode, and between hole transport layer(HTL) and emitting material layer(EML). We measured current density-voltage and luminance-voltage characteristics at room temperature.

Keywords

References

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