• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.404-409
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• 2004

We fabricated photo-sensor for fluorescence detection in LOC. LOC is high throughput screening system. Our LOC screens biochemical reaction of protein using the immunoassay, and converts biochemical reaction into electrical signal using LIF(Laser Induced Fluorescence) detection method. Protein is labeled with rhodamine intercalating dye and finger PIN photodiode is used as photo-sensor We measured fluorescence emission of rhodamine dye and analyzed tendency of fluorescence detection, according to photo-sensor size, light intensity, and rhodamine concentration. Detection current was almost linearly proportional to two parameters, intensity and concentration, and was inversely proportional to photo-sensor size. Integrated LOC consists of optical-filter deposited photo-sensor and PDMS microchannel detected 50 (pg/${mu}ell$) rhodamine. For integrated LOC including light source, we used green LED as the light source and measured emitted fluorescence.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.3
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• pp.539-546
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• 1997

In this paper, we proposed a new mehtod to analyze the performance degradation by timing jitters in the APD (avalanche photodiode) receivers of intensity modulation/direct detection digital optical communication systems where raised cosine pulse-shaping filters are used to reduce the effect of noise while minimizing intersymbol interferences. The proposed analytical method is an extension of an analytical method we have already developed for pin diode receivers, and incorporates the effects of APD's multiplication factor and resulting shot noise. Using the proposed analytical method, we derive an approximated power penalty due to timing jitters based on an assumption of Gaussian distribution for timing jitters, and compare with that of the conventional analytical method. The results obtained from the proposed analytical method show that conventional analytical methods underestimate the influence of timing jitters on the reciver performance. The results also show that APD's multiplication factor which optimizes receiver sensitivity is smaller than that obtained by the conventional analytical method.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2003.11a
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• pp.223-226
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• 2003

본 연구에서는 패러데이 효과(Faraday Effect)를 이용한 초고압 전력설비에서의 광전류 센서의 특성에 대한 기초 연구를 하였다. 광원은 Laser Diode(1310[nm])를 사용하고, 수신부는 PIN-Photodiode를 사용하였다. 센싱부로 사용한 광섬유는 single mode unjacked fiber를 사용하였고, 편광기를 사용하여 빛의 광학적인 편파면을 이용한 전류측정이 가능함을 확인할 수 있었다. 측정 결과에서는 전류에 따른 출력 신호가 나옴으로써 기존 문헌상의 결과와 동일하다는 것을 알 수 있었고 센싱부로 사용한 파이버의 길이에 따른 출력차이를 통해 파이버의 길이가 길수록 강도가 커진다는 것을 알 수 있었다. 또한 길이에 따라 출력의 차이뿐만 아니라 선형성까지도 차이가 난다는 것을 알 수 있었다. reference 값과 광전류센서의 출력 강도와의 오차율을 구했을 때 5[m] 10[m]길이의 광섬유 각각에 대해서 1000[A]이상의 값에서 각각 약 -0.9[%], -0.4[%]의 오차율을 보임을 확인했다. 여기서 인가한 전류값과 길이 즉, 감은 수에 따라 그 오차율이 점점 나아질 수 있다는 것을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.178.2-178.2
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• 2013

Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.193-197
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• 2004

The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.53-60
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• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

• Journal of the Korean Society of Radiology
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• v.16 no.5
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• pp.519-526
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• 2022

Electronic personal dosimeter (EPD) provide real time monitoring and a direct indication of the accumulated dose or dose rate in terms of personal dose. Most EPD do not perform well in low energy photon radiation fields present in medical radiation environments. It has poor responsibility and large error rate for low energy photon radiation of medical radiation environments. This study evaluated to optimal additional filtration for EPD using silicon PIN photodiode detector form 40 to 120 kVp range in medical radiation environments. From 40 to 80 kVp energy range, Al 0.2 mm and Sn 1.0 mm overlapped filtration showed good responsibility to dose rate and from 80 kVp to 120 kVp energy range, Al 0.2 mm and Sn 1.6 mm overlapped filtration showed good responsibility to dose rate.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.47-53
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• 2003

In this paper, we described the laboratory layout of the optical CT in connection with the measurement of large current based on Magneto-Optic Effects. It was used He-Ne laser for light source and was used PIN-Photodiode for light receiver. The sensing section was organized by winding optical fiber around conductor on the concept that the rotation angle of polarizing axis by Faraday Effect is proportional to the applied current in to conduction. The optical signal passed through optical fiber sensor was induced to analyzer arranged in the direction of $\theta$ for input polarization, and then analyzed its rotation angle and researched on operating characteristics of optical CT for 60[Hz] AC current measurement from l00[A] to 1000[A] was carried out. In this results, the output signals induced linearly with the current and proved that the intensity is increased with increasing turns of fiber through output differences which in accordance with turns of fiber and we verified that there is not only difference of the output with the medium between electric field and optical fiber, but also the lineality. Measuring the references and output intensities of the optical CT, ratio errors were within $\pm$7%. This confirmed that error rate will be improved by each medium and turns.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.29-33
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• 2004

In this paper, we took the basic experiment in order to explore the characteristics of optical CT(optical current transformer) for measuring high current in a superhigh voltage condition using faraday effect and wrote that. We used the 1,310[nm] Laser Diode for the source of light and PIN-Photodiode for receiver. The transmission line of light was composed of the single-mode fiber of 30[m] which could maintain the state of polarization in the optical fiber. The range of current was from 400[A] to 1300[A]. In addition, the temperature ranged from $20[^{\circ}C}]\;to\;50[^{\circ}C]$. In a same experiment condition, a power magnitude increases in proportion as input current is increasing and temperature become low. The maximum ratio of error in temperature of $50[^{\circ}C]$ appears 0.15[%] and the 0.16[%], 1.24[%] and 0.07[%] is ratio of error in respectively $40[^{\circ}C],\;30[^{\circ}C],\;and\;20[^{\circ}C]$.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.4
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• pp.45-53
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• 1999

A pre amplifier, a limiting amplifier, and a decision IC chipset for 10Gbit/s optical receiver was implemented with AIGaAs/GaAs HBT(Heterojunction Bipolar Transistor) technology. The HBT allows a cutoff frequency of 55GHz and a maximum oscillation of 45GHz. An optical receiver front-end was implemented with the fabricated pre amplifier IC and a PIN photodiode. It showed 46dB$\Omega$, gain and $f_{3db}$ of 12.3GHz. The limiting amplifier Ie showed 27dB small signal gain, $f_{3db}$ of 1O.6GHz, and the output is limited to 900mVp-p from 20mVp-p input voltage. The decision circuit IC showed 300-degree phase margin and input voltage sensitivity of 47mVp-p at 1OGbit/s.