• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.237-242
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• 1997

The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at $P_{O2}=10%$ by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, is investigated. Newly developed $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits good soft magnetic properties with $4{\pi}M_s=17.7$ kG, $H_c=0.7$ Oe and ${\mu}_{eff}$(0.5~100MHz)=2,500, respectively. The Fe-Hf-O films are composed of $\alpha$-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally. It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf. It results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity. The $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits the quality factor (Q=$\mu$'/$\mu$") of 25 at 20 MHz. These good frequency characteristics are considered to be superior to other films already reported.o other films already reported.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.666-670
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• 2007

Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.303-311
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• 1994

Optimum conditions for the deposition of N-docosylquinolium-TCNQ ultrathin organic films using the Langmuir-Blodgett etchnique and the molecular orientation and alignment of the LB films were studied. The $\pi$-A isotherm of the N-docosylquinolium-TCNQ was measured at the air-water interface varying with the subphase temperature, subphase pH, compressing speed and amounts of solutions for spreading. The LB film was deposited under the surface pressure of 30mN.m and 45mN/m and other deposition conditions. The molecular orientation and alignment of the LB films were studied by the polarization absorption technique. The $\pi$-A isotherm showed that the stable N-docosylquinolium -TCNQ monolayer was formed on the water surface at the condition of 25$^{\circ}C$,pH 5.6, molecular density of 2.1${\times}$10S014T~2.6${\times}$10S014T/cmS02T. The LB film was deposited under the surface pressure of 45mN/m had better packing density, orientation and alignment than the film of 30mN/m.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1487-1489
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• 1998

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-lR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From SEM, AFM and Ellipsometer experimental, as the higher curing temperatures the films thickness decreases and reflectance increases. Therefore, Pl could be fabricated stable by increasing curing temperature. The relative permitivity and dissipation loss factor were 3.7 and 0.008. Also, the resistivity was about $1.05{\times}10^{15}{\Omega}cm$ at $30^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.393-397
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• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.103-106
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• 2003

It is well known that the state of existence of molecules on the surface of water changes during compression of the molecules. Electric methods, such as measurement of the surface potential or displacement current are also useful for investigating dynamic changes of molecular state on the water surface during compression. In this paper, We studied on the Bio thin film by Langmuir-Biodgett(LB) method. The Experiment method used displacement current, $\pi-A$ isotherm and BAM (Brewster Angle Microscopy). using the BAM, we can to the molecular orientation of monolayer on the water surface and directly see the morphology of the films on water subphase as well as that of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.89-90
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• 2006

Electro-optical (EO) characteristics of in-plane switching (IPS) cell on the polyimide surface using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned IPS-cell on poly imide surface ; the stable VT curve in the ion-beam-aligned IPS cell on a poly imide (PI) surface with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned IPS cell on a polyimide (PI) surface with ion beam exposure using new type IB equipment was obtained.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.73-78
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• 2002

The polyimide(PI) Langmuir-Blodgett(LB) ultra thin films were prepared by imidizing the PAAS LB films of PMDA and benzidine system with a thermal treatment at $250^{\circ}C$ for 30min, where the PAAS LB films were formed on substrates by using LB technique. The thicknesses of one layer of PAAS and PI LB film that deposited at the surface pressure of 27mN/m were 20.9 and 4A, respectively. At low electric field, ohmic conduction($I^{\propto}$ V) was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}S/cm$. The dielectric constant of LB film was about 7.0.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.4
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• pp.193-197
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• 2023

Transparent and conducting titanium (Ti) doped indium oxide (TIO) thin films were deposited on the poly-imide (PI) substrate with radio frequency magnetron sputtering and then electron irradiation was conducted on the TIO film's surface to investigate the effect electron irradiation on the crystallization and opto-electrical properties of the films. All x-ray diffraction (XRD) pattern showed two diffraction peaks of the In₂O₂ (431) and (444) planes with regardless of the electron beam irradiation energy. In the AFM analysis, the surface roughness of as deposited films was 3.29 nm, while the films electron irradiated at 700 eV, show a lower RMS roughness of 2.62 nm. In this study, the FOM of as deposited TIO films is 6.82 × 10^-3 Ω^-1, while the films electron irradiated at 500 eV show the higher FOM value of 1.0 × 10^-2 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation at 500 eV is the one of effective methods of crystallization and enhancement of opto-electrical performance of TIO thin film deposited on the PI substrate.