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http://dx.doi.org/10.4313/JKEM.2007.20.8.666

A Study on Properties of ZnO:Al Films on Polyimide Substrate  

Lee, Dong-Jin (군산대학교 전자정보공학부)
Lee, Jae-Hyeong (군산대학교 전자정보공학부)
Ju, Jung-Hun (군산대학교 전자정보공학부)
Lee, Jong-In (군산대학교 전자정보공학부)
Jung, Hak-Kee (군산대학교 전자정보공학부)
Jung, Dong-Su (군산대학교 전자정보공학부)
Song, Jun-Tae (성균관대학교 정보통신공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.8, 2007 , pp. 666-670 More about this Journal
Abstract
Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.
Keywords
TCO; ZnO; RF sputtering; Polyimide; Optical properties;
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