• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.139-144
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• 1992

Abstract-Polyimide (PI) thin films were deposited by the ionized cluster beam deposition (ICBD) technique. Imidization and crystallization of PI films were investigated using transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FT-IR). PI films deposited under optimum conditions showed a maximum imidization and good crystal structure, which are superior to those of the films fabricated by other techniques.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.59-64
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• 2022

Effects of film stack structure and peeling rate on the peel strength of screen-printed (SP) Ag/polyimide (PI) systems were investigated by a 90° peel test. When PI film was peeled at PI/SP-Ag and PI/SP-Ag/electroplated (EP) Cu structures, the peel strength was nearly constant regardless of the peeling rate. When EP Cu was peeled at EP Cu/SP-Ag/PI structure, the peel strength continuously increased as peeling rate increased. Considering uniaxial tensile test results of EP Cu/SP-Ag film with respect to loading rate, the increase of 90° plastic bending energy and peel strength was attributed to increased flow stress and toughness. On the other hand, viscoelastic PI film showed little variation of flow stress and toughness with respect to loading rate, which was assumed to result in nearly constant 90° plastic bending energy and peel strength.

• Journal of the Korean Magnetics Society
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• v.10 no.1
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• pp.30-36
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• 2000

SmCo films were deposited on Si(100) substrate by a Nd-YAG pulsed laser ablation of the targets of Sm$\_$100-x/Co$\_$x/ (73$\leq$x$\leq$93) at the substrate temperature of 600∼700$\^{C}$ and the laser beam energy density of Q switching mode or fixed Q mode. The magnetic properties of the films obtained from the Q switching mode exhibited a 4 $\pi$ Ms of 5200∼7700 Gauss, iHc of 190-250 Oe, and 4$\pi$M$\_$r//4$\pi$M$\_$s/ of 0.4∼0.74, respectively, while the fixed Q mode gave the magnetic properties of corresponding films of a 4$\pi$M$\_$r//4$\pi$M$\_$s/ = 0.32∼0.91 and iHc of 430-6290 Oe, respectively. The fixed Q mode gave the better magnetic properties of the SmCo films which seems to be due to a formation of magnetically hard minor phases in droplet of Sm-rich intermetallics. However, the resultant rough surface of the SmCo films is a problem to be solved by a continued study.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.24-24
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• 1996

• Korean Journal of Optics and Photonics
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• v.27 no.4
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• pp.143-150
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• 2016

The thickness of each layer in a multilayered system is determined by a Fourier-transform method using spectroscopic reflectance measurements. To verify this method, we first generate theoretical reflectance spectra for three layers, and these are fast-Fourier-transformed using our own Matlab program. Each peak of the Fourier-transformed delta function denotes the optical thickness of each layer, and these are transformed to physical thicknesses. The relative thickness error of the theoretical model is less than 1.0% while a layer's optical thickness is greater than 730 nm. A PI-(thin $SiO_2$)-PImultilayeredstructure produced by the bar-coating method was analyzed, and the thickness errors compared to SEM measurements. Even though this Fourier-transform method requires knowing the film order and the refractive index of each layer prior to analysis, it is a fast and nondestructive method for the analysis of multilayered structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.12-16
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• 2020

Indium tin oxide (ITO) films were prepared onto transparent polyimide (PI) substrates by RF magnetron sputtering at room temperature. The deposited ITO films were heat-treated at various temperatures (50, 100, 150, and 200℃). The effect of post heat-treatment temperature on structural, electrical and optical properties of ITO films were investigated. It was found that the as-deposited ITO films were amorphous and the degree of crystallinity and the grain size increased with an increasing heat-treatment temperature, which led to the increase in carrier concentration and mobility. The electrical resistivity of as-deposited ITO films was 2.73 × 10^-3 Ω·cm. With the heat-treatment temperature increasing from 50 to 200℃, the electrical resistivity decreased from 2.93 × 10^-3 to 1.21 × 10^-4 Ω·cm. The average transmittance (400~800 nm) of the ITO deposited PI substrates was decreasing with post heat-treatment temperature and was above 81 % for the temperatures 50~150℃ and decreased considerably to 78 % at 200℃.

• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.146-147
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• 1998

• Polymer(Korea)
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• v.34 no.4
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• pp.376-380
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• 2010

Donor-$\pi$-acceptor (D-$\pi$-A) type chromophore-based polymers were newly synthesized. These polymers exhibited absorption peak due to intramolecular charge transfer (ICT) in a visible range as well as absorption peak due to carbonyl group in both solution and film state by measuring UV visible spectra. The addition of $Eu^{3+}$ ion into the polymers induced red-shift in absorption due to ICT and the color changes from yellow to red in the solution and film were observed by naked eyes. The contents of crosslinking agent influenced the features and solubility of the polymers. In addition, the contents of crosslinking agent and the $Eu^{3+}$ ion addition improved film-forming ability.

• Journal of Satellite, Information and Communications
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• v.10 no.1
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• pp.67-70
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• 2015

We studied the state of the dual liquid crystal (LC) alignment which displays both homeotropic and homogeneous alignment on blended polyimide (PI) layer. The research was conducted using rubbing method at different imidizing temperatures and the blended PI was made using homeotropic PI having an alkyl side chain and homogeneous PI without the side chain. The uniform LC alignments were achieved, and have thermal stability. The results of contact angles were similar to that of pretilt angles.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.1-6
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• 2002

For an optimum device design of nano-scale SOI devices, this paper describes the short channel effects of multi-gate structures SOI MOSFETs such as double gate, triple gate and quadruple gate, as well as a new proposed Pi gate using computer simulation. The simulation has been performed with different channel doping concentrations, channel widths, silicon film thickness, and vertical gate extension depths of Pi gate. From the simulation results, it is found that Pi gate devices have a large margin in determination of doping concentrations, channel widths and film thickness comparing to double and triple gate devices because Pi gate devices offer a better short channel effects.