• Korean Journal of Materials Research
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• v.14 no.10
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• pp.683-687
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• 2004

The BON thin films were grown on the Si substrate by the RF-PECVD method. When stored at the room temperature, the phase separation or transition of BON thin films occurred on the surface, due to the hydrophilic property of BON. The oxidation of BON thin films occurred mainly by the evaporation of B, O and N. The oxidized BON thin films consisted of an amorphous phase and a bit of the polycrystalline phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.220-223
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• 1996

Mechanical properties of Plasma-Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin film was studied to determine the feasibility of the film as a passivation layer over the aluminum bonding areas of integrated circuit chips. Ultimate strain of the films in thicknesses of about 5 k${\AA}$ was measured using four-point bending method. The ultimate strain of these films was constant at about 0.2% regardless of residual stress. Intrinsic and residual stresses of these films were measured and compared with thermal shock and cycling test results. Comparison of the results showed that more tensile films were more susceptible to crack- induced failure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.11-18
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• 2003

In this study we attempted to diagnose the states and properties of plasma generated while depositing SiON thin films using PECVD (Plasma enhanced chemical vapor deposition). The temperature and density of electron gases formed in a PECVD chamber were measured by Langmuir probe method. Their values were also estimated under some assumptions we made in this work. Comparison between experimental and theoretical values of the temperature and density of electron gases was made. The experimental and estimated results revealed that, as RF Power gets higher, the electron density linearly increases, but that the electron temperature does not vary.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.7
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• pp.1049-1058
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• 1990

Mathematical modeling equations of a parallel plate type reactor were obtained in the PECVD process in preparing hydrogenated amorphous silicon. Velocity profiles, temperature profiles and concentration profiles in the reactor were calculated from the model. The theoretical approach was attempted to obtain the deposition rate and film uniformity at different operating conditions by calculating RF discharge parameters and establishing the reaction mechanisms of a-Si:H thin film. The modelling equations are solved by a finite difference method with control volume balance. The mean electrom energy in discharge was applied to model simulation parameter. The magnitudes of the predicted deposition rate are in good aggrement with those of experiment. The results of computer simulation shows that uniform deposition profiles can.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.2
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• pp.144-148
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• 2013

In this paper, the ultra water-repellent thin films were prepared by RF PECVD. On the basis of surface morphology, chemical bonding states and plasma diagnostics, a formation model of clusters for the ultra water-repellent films was discussed from considerations of formation process and laser scattering results. Moreover, using laser scattering method, the relative change of quantity of nano-clusters or size of agglomerates could be confirmed. From the results, the films were deposited with nano-clusters and those of agglomerates, which formed in organosilicon plasma, and formation of agglomerates were depended on the deposition time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.328-331
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• 2000

Carbon nanotube(CNT) was successfully grown on Ni-W alloyed substrate by applying PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni-W alloyed substrate was prepared by mechanical alloying method. In order to find the optimum growth condition, initially two different types of gas mixtures such ac $C_2$H$_2$-H$_2$and $C_2$H$_2$-MH$_3$were systematically investigated by adjusting results on the mixing ratio in temperature range of 500 to 80$0^{\circ}C$. In this work, we will report the preliminary results on the CNT processed by PECVD, which were characterized by XRD, SEM and TEM. Finally we will evalute the effect on CNT growth by changing many processing parameters, such as typical gas, mixing ratio between 2 mixture, plasma power and etc.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.497-504
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• 2009

DLC is considered as the candidate material for application of moving parts in automotive components relatively in high pressure and temperature operating conditions for its high hardness with self lubrication and chemical inertness. Different deposition method such as arc plating, ion gun plating and PECVD were used for comparing mechanical and tribological properties of each DLCs deposited on stainless steel with 1 um thick respectively. Among these 3 types of DLCs, the arc plated DLC film showed highest value for wear resistance in dry condition. From the results of analysis for physical properties of DLC films, it seems that the adhesion force and crack initiation modes were more important factors than intrinsic mechanical properties such as hardness, elastic modulus and/or roughness to the wear resistance of DLC films. Raman spectroscopy was used for understanding chemical bonding natures of each type of DLC films. Typical D and G peaks were identified based on the deposition method. Hardness of the coating layers were identified by nanoindentation method and the adhesions were checked by scratch method.

• ETRI Journal
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• v.25 no.2
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• pp.73-80
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• 2003

This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.465-471
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• 1998

Diamond-like carbon (DLC) films have been prepared by means of the plasma enhanced chemical vapor deposition (PECVD) method using vertical-capacitor electrodes. The deposition rata in our experiment is relatively small compared with that in the conventional PECVD methods, which implies that the accumulation of the neutral $CH_n$ radicals on the substrates due to the gravitational movement may not contribute to the deposition of DLC films. The hardness and the transparency were measured as a function of the ratio of the partial pressure of $CH_4-H_2$ mixtures or the hydrogen contents of specimens. The coefficients of friction between DLC films and a $Si_3N_4$ tip measured by using a lateral force microscope are in the range of 0.024 to 0.033 which depend on the hydrogen contents in DLC, and the surface roughness depends mainly on the deposition rate. The optical gaps increase with increasing the hydrogen contents. DCL films deposited on Pt-coated Si wafers show the stable emission characteristics, and the turn-on fields are in the range of 11 to 20 $V/\mu$m.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.235-243
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• 1997

The high-$T_c$ superconducting phase, $YBa_2Cu_3O_x$, was deposited on the single crystal MgO substrate, using a liquid aerosol feed method in a plasma enhanced chemical vapor deposition(PECVD) reactor. The effect of the plasma distribution depending on the design of a reactor was studied by the analysis of the microstructures of thin films. The particles landed were frequently observed on the films and the two causes that were responsible for the particle deposition were explained. The particles were deposited by the unstable and non-uniform plasma and the low evaporation rate of the precursors. Also, the thin film deposition rate decreased significantly as the distance between the evaporating location and the substrate increased.