[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/JKEM.2003.16.1.011

Diagnosis on Plasma Utilized for the Deposition of SiON Thin Films

김기현 (고려대학교 전기공학과)
김현석 (고려대학교 전기공학과)
성만영 (고려대학교 전기공학과)
김상식 (고려대학교 전기공학과)

Publication Information

Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.1, 2003 , pp. 11-18 More about this Journal

Abstract

In this study we attempted to diagnose the states and properties of plasma generated while depositing SiON thin films using PECVD (Plasma enhanced chemical vapor deposition). The temperature and density of electron gases formed in a PECVD chamber were measured by Langmuir probe method. Their values were also estimated under some assumptions we made in this work. Comparison between experimental and theoretical values of the temperature and density of electron gases was made. The experimental and estimated results revealed that, as RF Power gets higher, the electron density linearly increases, but that the electron temperature does not vary.

Keywords

Plasma; SiON; Diagnosis; PECVD; Langmuir;

Citations & Related Records

Times Cited By KSCI : 3 (Citation Analysis)

Reference
Cited By KSCI

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KSCI

Diagnosis on Plasma Utilized for the Deposition of SiON Thin Films SiON 박막 증착에 사용된 플라즈마에 대한 진단

Diagnosis on Plasma Utilized for the Deposition of SiON Thin Films