• Korean Chemical Engineering Research
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• v.48 no.6
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• pp.737-740
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• 2010

High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.

• Journal of Sensor Science and Technology
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• v.7 no.6
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• pp.426-431
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• 1998

This paper describes electrochemical etch-stop characteristics in THAH/IPA/pyrazine solution. I-V curves of n- and p-type Si in THAH/IPA/pyrazine solution were obtained. OCP(Open Circuit Potential) and PP (Passivation Potential) of p-type Si were -1.2 V and 0.1 V, and of n-type Si were -1.3 V and -0.2 V, respectively. Both n- and p-type Si, etching rates were abruptly decreased at potentials anodic to the PP. The etch-stop characteristics in THAH/IPA/pyrazine solution were observed. Since accurate etching stop occurs at pn junction, Si diaphragms having thickness of epi-layer were fabricated. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vol.%/pyrazine 0.1g/100ml. thus the elapsed time of etch-stop was reduced.

• Journal of Environmental Science International
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• v.19 no.7
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• pp.871-877
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• 2010

The objectives of this study were to compare growth of Pllioblastus pygmaed and soil characteristics as affected by difference of soil thickness and mixture ratio in shallow-extensive green roof module system, and to identify the level of soil thickness and mixture as suitable growing condition to achieve the desired plants in green roof. Different soil thickness levels were achieved under 15cm and 25cm of shallow-extensive green roof module system that was made by woody materials for $500{\times}500{\times}300mm$. Soil mixture ratio were three types for perlit: peatmoss: leafmold=6:2:2(v/v/v, $P_6P_2L_2$), perlit: peatmoss: leafmold=5:3:2(v/v/v, $P_5P_3L_2$) and perlit: peatmoss: leafmold=4:4:2(v/v/v, $P_4P_4L_2$). On June 2006, Pllioblastus pygmaed were planted directly in a green roof module system in rows. All treatment were arranged in a randomized complete block design with three replication. The results are summarized below. In term of soil characteristics, Soil acidity and electric conductivity was measured in pH 6.0~6.6 and 0.12dS/m~0.19dS/m, respectively. Organic matter and exchangeable cations desorption fell in the order: $P_4P_4L_2$ > $P_5P_3L_2$ > $P_6P_2L_2$. $P_6P_2L_2$ had higher levels of the total solid phase and liquid phase, and $P_4P_4L_2$ had gas phase for three phases of soil in the 15cm and 25cm soil thickness. Although Pllioblastus pygmaed was possibled soil thickness 15cm, there was a trend towards increased soil thickness with increased leaf length, number of leaves and chlorophyll contents in 25cm. The growth response of Pllioblastus pygmaed had fine and sustain condition in order to $P_6P_2L_2$ = $P_5P_3L_2$ > $P_4P_4L_2$. However, The results of this study suggested that plants grown under $P_4P_4L_2$ appear a higher density ground covering than plants grown under $P_6P_2L_2$. Collectively, our data emphasize that soil thickness for growth of Pllioblastus pygmaed were greater than soil mixture ratio in shallow-extensive green roof module system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.644-647
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• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.200-203
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• 2007

Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was $3{\mu}m$ space. In this paper, I-V characteristics was modeled by using of device fabricated process conditions parameters and it was extracted that the I-V property parameters, and it was compared and analyzed with between device parameters and model parameters.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.557-562
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• 2009

Recently, researchers are developing a new, clean, renewable and sustainable energy to the industrial areas and the residential areas. Solar cell and fuel cell energy are presented in this paper. The paper shows the P-I and I-V characteristics of fuel cells which are connected in parallel and series. And the voltage drop of internal resistance of the fuel cell decreases with the increasing of the current of the fuel cell. A voltage drop at the internal resistance is increased according to the current, thus the terminal voltage is decreased. The internal resistance is calculated $0.3[\Omega]$ from maximum power transfer condition.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.8 no.1
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• pp.12-16
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• 1983

This paper is dealing a $V_3O_5-P_2O_5$ metal oxide glass semiconductor. This semiconductor is easy to fabricate in the atmospheric condition at relatively low temperature. The element is made like a bead, and platinum segments are used as electrodes. Other kind of metal withstanding high temperature near 1000C can also be used as electrode. Experiment verifies that the fabricated element has the resistance in the order of about ~$10^5\;\Omega$, and shows negative resistance characteristics and switching characteristics with respect to temperature. An equivalent circuit of the element is proposed based on its electrical characteristcs.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.135-138
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• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.86-90
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• 1992

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.131-139
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• 1996

Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).