• 산업기술연구
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• 제21권A호
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• pp.231-240
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• 2001

U-turn and P-turn as well as left-turn restriction exist in real traffic network. the optimal route should be selected for considering these using shortest path algorithms. But, the traditional algorithms have some limitations to use for considering there. The objective of this paper is to modify Dijkstra algorithm in order to find the optimal path in real traffic network. The continuous three nodes are used to check turn-restrictions and exclude these from and optimal path. A virtual connection is used to consider U-turn and P-turn.

• 산업기술연구
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• 제21권A호
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• pp.241-249
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• 2001

The objective of this paper is to develop the optimal path algorithm for dynamic route guidance system in advanced traveler information system (ATIS). The travel time is forecasted in each path between network nodes. Floyd-Warshall algorithm is used to find the optimal route based on this forecasted travel time in dynamic traffic network. This algorithm is modified to apply the real traffic network that has left-turn restriction, U-turn, and P-turn. A big value is assigned to one of arcs in turn restriction and a virtual node is used to consider U-turn and P-turn for Floyd-Warshall algorithm.

• 한국운동역학회지
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• 제27권4호
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• pp.257-262
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• 2017

Objective: This study aimed to investigate the differences in skiing time and vertical ground reaction force (vGRF) between the basic parallel turn and short turn. Method: Eleven alpine ski instructors (age: $28.73{\pm}4.29yrs$, height: $172.36{\pm}6.30cm$, body mass: $71.45{\pm}9.16kg$, career: $11.09{\pm}2.70yrs$) participated in this study. Each skier was asked to perform a basic parallel turn and short turn on a $16^{\circ}$ groomed slope. A foot pressure measurement system was used to measure the skiing time and vGRF under the three plantar regions (forefoot, midfoot, rearfoot). Results: Skiing time decreased significantly in all three phases during the short turn (p<.05). In the initiation phase, the vGRF showed a greater decrease on the midfoot and rearfoot during the short turn (p<.05). In the steering phase 1, the vGRF showed a greater increase on the forefoot and decreased on the midfoot during the short turn (p<.05). In the steering phase 2, the vGRF showed a greater increase on the forefoot and rearfoot during the short turn (p<.05). Conclusion: Our findings proved that the skiing time and vGRF changed during the short turn. Consequently, we suggest that recreational skiers should decrease the skiing time of the steering phase compared to that of the initiation phase and increase the vGRF on the forefoot and rearfoot in the steering phase.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

• 한국운동역학회지
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• 제24권3호
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• pp.201-207
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• 2014

This study investigated the center of mass and lower extremity kinematic patterns between carved and basic paralell turn during alpine skiing. Six experienced skiers (age: $20.67{\pm}4.72yrs$, body mass: $72.67{\pm}7.15kg$, height: $171.00{\pm}5.51cm$) participated in this study. Each skier were asked to perform carved and basic paralell turn on a $22.95^{\circ}$ groomed slope. Each turn was divided into the initiation phase, steering phase 1 and 2. The results of this study show that the carved turn spent significantly less running time than basic paralell turn at all three phases (p<.05). Also vertical displacement of the center of mass was significantly greater in carved turn at all three phases, whereas inward leaning angle of the center of mass was significantly greater in carved turn at the steering phase 1 and 2 (p<.05). Bilateral knee and hip joint angle were significantly greater in basic paralell turn at the initiation phase and the steering phase 2 (p<.05). On the other hand, left knee and hip joint angle were significantly greater in basic paralell turn at the steering phase 1 (p<.05). In order to perform successful carved turn, we suggest that skiers should coordinate bilateral knee and hip joint angles to adjust the center of mass, depending on three ski turn phases.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1205-1208
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• 1995

The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(${\delta}{\iota}$) between two pulses, but a weak dependence on the width of optical pulse. Actually there is no turn-off delay in gold-doped p-i-n switches and the fall time is negligible.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.64-65
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• 2001

• 대한교통학회지
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• 제14권3호
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• pp.45-59
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• 1996

The shortest path algorithm for route guidance is implicitly required not only to support geometrical variations of transportation network such as U-TURN or P-TURN but to efficiency search reasonable routes in searching mechanism. The purpose of this paper is to integrate such two requirements ; that is, to allow U-TURN and P-TURN possibilities and to cut down searching time in locating routes between two points (origin and destination) in networks. We also propose a new type of link searching algorithm which can solve the limitation of vine building algorithm at consecutively left-turn prohibited intersections. The test site is a block of Gangnam road network that has some left-turn prohibited and allowed U-TURN intersections. Four models have been identified to be comparatively analyzed in terms of searching efficiency. The Models are as follows : (i) Model 1 - Link Searching Dijkstra Algorithm without Searching Area Extraction (SAE) ; (ii) Model 2 - Link Searching Dijkstra Algorithm with SAE ; (iii) Model 3 - Link Searching Bidirectional Dijkstra Algorithm without SAE ; and (iv) Model 4 - Link Searching Bidirectional Dijkstra Algorithm with SAE. The results of comparative evaluation show that Model 4 can effectively find optimum path faster than any other models as expected. Some discussions and future research agenda have been presented in the light of dynamic route guidance application of the urban ATIS.

• 대한전기학회논문지
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• 제45권4호
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• pp.562-567
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• 1996

A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

• 한국정보전자통신기술학회논문지
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• 제6권3호
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• pp.168-173
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• 2013

본 연구는 IGBT(Insulated Gate Bipolar Transistor)의 전기적 특성을 향상시키기 위해 새로운 구조의 IGBT를 제안하였다. 첫 번째 구조는 기존 IGBT 구조의 P-베이스 영역 우측 부분에 N+영역을 추가한 방법으로 기존 구조에 비해 빠른 Turn-off 시간과 낮은 전도 손실을 갖는 구조이다. 또한, 두 번째 구조는 게이트 우측 하단에 P+를 형성함으로써 Latching 전류를 향상시킨 구조이다. 시뮬레이션 결과 제안된 첫 번째 구조는 빠른 Turn-off 시간(3.4us), 낮은 순방향 전압강하(3.08V)의 특성을 보였으며, 두 번째 구조는 높은 Latching 전류(369A/?? ) 특성을 보였다. 따라서 본 논문은 제안된 두 가지의 구조를 하나로 결합한 구조로써 기존 IGBT보다 향상된 특성을 시뮬레이션을 통하여 확인하였다.