• Title/Summary/Keyword: P-Turn

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A Study on Dijkstra Algorithm in Crossroad Including Left-turn Restriction, U-turn, and P-turn (교차로에서의 좌회전 금지, U-turn, P-turn을 고려한 개선된 Dijkstra Algorithm에 관한 연구)

  • Kim, Sung-Soo;Jun, Young-Joo;Cha, Young-Min
    • Journal of Industrial Technology
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    • v.21 no.A
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    • pp.231-240
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    • 2001
  • U-turn and P-turn as well as left-turn restriction exist in real traffic network. the optimal route should be selected for considering these using shortest path algorithms. But, the traditional algorithms have some limitations to use for considering there. The objective of this paper is to modify Dijkstra algorithm in order to find the optimal path in real traffic network. The continuous three nodes are used to check turn-restrictions and exclude these from and optimal path. A virtual connection is used to consider U-turn and P-turn.

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Development of Optimal Path Algorithm for Advanced Traveler Information System (첨단교통정보시스템의 최적경로 알고리즘 개발)

  • Kim, Sung-Soo;Cha, Young-Min
    • Journal of Industrial Technology
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    • v.21 no.A
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    • pp.241-249
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    • 2001
  • The objective of this paper is to develop the optimal path algorithm for dynamic route guidance system in advanced traveler information system (ATIS). The travel time is forecasted in each path between network nodes. Floyd-Warshall algorithm is used to find the optimal route based on this forecasted travel time in dynamic traffic network. This algorithm is modified to apply the real traffic network that has left-turn restriction, U-turn, and P-turn. A big value is assigned to one of arcs in turn restriction and a virtual node is used to consider U-turn and P-turn for Floyd-Warshall algorithm.

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Comparison of Skiing Time and Vertical Ground Reaction Force between the Short Turn and Basic Parallel Turn during Alpine Skiing

  • Kim, Jin-Hae;Kim, Joo-Nyeon
    • Korean Journal of Applied Biomechanics
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    • v.27 no.4
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    • pp.257-262
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    • 2017
  • Objective: This study aimed to investigate the differences in skiing time and vertical ground reaction force (vGRF) between the basic parallel turn and short turn. Method: Eleven alpine ski instructors (age: $28.73{\pm}4.29yrs$, height: $172.36{\pm}6.30cm$, body mass: $71.45{\pm}9.16kg$, career: $11.09{\pm}2.70yrs$) participated in this study. Each skier was asked to perform a basic parallel turn and short turn on a $16^{\circ}$ groomed slope. A foot pressure measurement system was used to measure the skiing time and vGRF under the three plantar regions (forefoot, midfoot, rearfoot). Results: Skiing time decreased significantly in all three phases during the short turn (p<.05). In the initiation phase, the vGRF showed a greater decrease on the midfoot and rearfoot during the short turn (p<.05). In the steering phase 1, the vGRF showed a greater increase on the forefoot and decreased on the midfoot during the short turn (p<.05). In the steering phase 2, the vGRF showed a greater increase on the forefoot and rearfoot during the short turn (p<.05). Conclusion: Our findings proved that the skiing time and vGRF changed during the short turn. Consequently, we suggest that recreational skiers should decrease the skiing time of the steering phase compared to that of the initiation phase and increase the vGRF on the forefoot and rearfoot in the steering phase.

Comparison of turn-on/turn-off transient in Electron Irradiated and Proton Irradiated Silicon pn diode (전자와 양성자를 조사한 PN 다이오드의 turn-on/turn-off transient 특성 비교)

  • Lee, Ho-Sung;Lee, Jun-Ho;Park, Jun;Jo, Jung-Yol
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1947-1949
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    • 1999
  • Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

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Comparisons of Center of Mass and Lower Extremity Kinematic Patterns between Carved and Basic Parallel Turn during Alpine Skiing (알파인 스킹 시 카빙 턴과 베이직 패러렐 턴 간의 신체중심 및 하지관절의 운동학적 패턴 비교)

  • Kim, Joo-Nyeon;Jeon, Hyun-Min;Yoo, Si-Hyun;Ha, Sung-He;Kim, Jin-Hae;Ryu, Ji-Seon;Park, Sang-Kyoon;Yoon, Suk-Hoon
    • Korean Journal of Applied Biomechanics
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    • v.24 no.3
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    • pp.201-207
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    • 2014
  • This study investigated the center of mass and lower extremity kinematic patterns between carved and basic paralell turn during alpine skiing. Six experienced skiers (age: $20.67{\pm}4.72yrs$, body mass: $72.67{\pm}7.15kg$, height: $171.00{\pm}5.51cm$) participated in this study. Each skier were asked to perform carved and basic paralell turn on a $22.95^{\circ}$ groomed slope. Each turn was divided into the initiation phase, steering phase 1 and 2. The results of this study show that the carved turn spent significantly less running time than basic paralell turn at all three phases (p<.05). Also vertical displacement of the center of mass was significantly greater in carved turn at all three phases, whereas inward leaning angle of the center of mass was significantly greater in carved turn at the steering phase 1 and 2 (p<.05). Bilateral knee and hip joint angle were significantly greater in basic paralell turn at the initiation phase and the steering phase 2 (p<.05). On the other hand, left knee and hip joint angle were significantly greater in basic paralell turn at the steering phase 1 (p<.05). In order to perform successful carved turn, we suggest that skiers should coordinate bilateral knee and hip joint angles to adjust the center of mass, depending on three ski turn phases.

Optical Transient Characteristics of Au-Compensated Silicon p-i-n Diode Switches (금이 보상된 실리콘 p-i-n 다이오드 스위치의 광 과도 특성)

  • Min, Nam-Ki;Henderson, H.T.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1205-1208
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    • 1995
  • The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(${\delta}{\iota}$) between two pulses, but a weak dependence on the width of optical pulse. Actually there is no turn-off delay in gold-doped p-i-n switches and the fall time is negligible.

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An Integration of Searching Area Extraction Scheme and Bi-directional Link Searching Algorithm for the Urban ATIS Application (도시부 ATIS 효율적 적용을 위한 탐색영역기법 및 양방향 링크탐색 알고리즘의 구현)

  • 이승환;최기주;김원길
    • Journal of Korean Society of Transportation
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    • v.14 no.3
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    • pp.45-59
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    • 1996
  • The shortest path algorithm for route guidance is implicitly required not only to support geometrical variations of transportation network such as U-TURN or P-TURN but to efficiency search reasonable routes in searching mechanism. The purpose of this paper is to integrate such two requirements ; that is, to allow U-TURN and P-TURN possibilities and to cut down searching time in locating routes between two points (origin and destination) in networks. We also propose a new type of link searching algorithm which can solve the limitation of vine building algorithm at consecutively left-turn prohibited intersections. The test site is a block of Gangnam road network that has some left-turn prohibited and allowed U-TURN intersections. Four models have been identified to be comparatively analyzed in terms of searching efficiency. The Models are as follows : (i) Model 1 - Link Searching Dijkstra Algorithm without Searching Area Extraction (SAE) ; (ii) Model 2 - Link Searching Dijkstra Algorithm with SAE ; (iii) Model 3 - Link Searching Bidirectional Dijkstra Algorithm without SAE ; and (iv) Model 4 - Link Searching Bidirectional Dijkstra Algorithm with SAE. The results of comparative evaluation show that Model 4 can effectively find optimum path faster than any other models as expected. Some discussions and future research agenda have been presented in the light of dynamic route guidance application of the urban ATIS.

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A shorted anode lateral MOS controlled thyristor with improved turn-off characteristics (턴-오프 특성이 향상된 Shorted Anode 수평형 MOS 제어 다이리스터)

  • 김성동;한민구;최연익
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.45 no.4
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    • pp.562-567
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    • 1996
  • A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

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A novel IGBT with improved electrical characteristics (향상된 전기적 특성을 갖는 IGBT에 관한 연구)

  • Koo, Yong-so
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.6 no.3
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    • pp.168-173
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    • 2013
  • In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/?? ) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.