• Journal of Power Electronics
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• v.11 no.1
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• pp.59-63
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• 2011

This paper presents the modeling of the sampling effect in the p-type average current mode control. The prediction of the high frequency components near half of the switching frequency in the current loop gain is given for the p-type average current mode control. By the proposed model, the prediction accuracy is improved when compared to that of conventional models. The proposed method is applied to a buck converter, and then the measurement results are analyzed.

• Honam Mathematical Journal
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• v.44 no.2
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• pp.271-280
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• 2022

In this study, We have applied the right operator k-Riemann-Liouville is involving two orders α and β with a positive parameter p > 0, further, the left operator k-Riemann-Liouville is used with the negative parameter p < 0 to introduce a new version related to Hardy-type inequalities. These inequalities are given and reversed for the cases 0 < p < 1 and p < 0. We then improved and generalized various consequences in the framework of Hardy-type fractional integral inequalities.

• Korean Journal of Mathematics
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• v.27 no.4
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• pp.899-927
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• 2019

In this paper we establish some results depending on the comparative growth properties of composite entire and meromorphic functions using relative (p, q)-th order and relative (p, q)-th lower order where p, q are any two positive integers and that of a special type of differential polynomial generated by one of the factors.

• Communications of the Korean Mathematical Society
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• v.31 no.4
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• pp.745-764
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• 2016

The object of the present paper is to obtain new estimates about the (p, q)-th lower order and (p, q)-th weak type of entire functions under some interesting conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.62-65
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• 1995

CdTe crystals were grown by the vertical Bridgman method. P-type DcTe crystals were grown with Cd:Te= 1:1.001 wt. % ratio, while n-type CdTe crystals were 1:1 Also, CdTe:In crystals were investigated, Lattic constants were 6.489${\AA}$ for p-type 6.480${\AA}$for n=type and 6.483${\AA}$ for CdTe:In EPD was 10$\^$-3/-10$\^$4/cm$\^$-2/ for n-, p-type CdTd, 10$\^$4/-10$\^$5/cm$\^$-2 for Cd:Te:In using by E-Ag solution for (111) plane The carrier concentration, the resistivity and the Hall carrier mobility measured by the van der Pauw method were p=5.78${\times}$10$\^$15/cm$\^$-3/, $\rho$=20.2$\Omega$cm, ${\mu}$$\sub$p/=75.6cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for p-typem n=2.98${\times}$10$\^$16/cm$\^$-3/, $\rho$=0.214$\Omega$cm, ${\mu}$$\sub$p/=978.9cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for n-type and n=7.45${\times}$10$\^$16/cm$\^$-3/, $\rho$=1.54 ${\times}$10$\^$3/$\Omega$cm, ${\mu}$$\sub$p/=658.4 cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for CdTe:In crystals, Transmittance of p-type CdTe was 61% that of n-type was 65%, Cd:Te:In showed 60% IR transmittance.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• Journal of Korean Academy of Fundamentals of Nursing
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• v.5 no.2
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• pp.237-256
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• 1998

Death and dying of human being is a comprehensive system, and death orientation, the subjective meaning related to every component of the death system is developed throughout life. This study was designed and carried out to identify, describe and classify the orientations of Korean adult towards the death system. In an attempt to measure the subjective meaning of death and dying, unstructured Q-methodology was used. The 65 Q-statements developed by Kim(1994), used by Kim(1994) and Park(1996) were adopted as Q-population and 39 Q-statements were selected by the three researchers for Q-items for this study. Thirty-three P-samples were sampled from P-population of literate Korean men and women, 35 and 55 years of age, lived in urban Korea for the last 10 years. Sortings of the 39 Q-items according to the level of personal agreement, and a forced normal distribution into the 9 levels were carried out by the P-samples. The Z-scores of the Q-sort data were computed, and the principal components factor analysis by PC-QUANL Program were carried out. The demographic, socio-cultural and health-related attributes of the P-samples were descriptively analysed. Eight types of death orientation were identified ; Type I ; 'naturalist'. Six P-samples. Death is a natural phenomena, to be accepted as it is and to follow its natural course. Prefer to be informed of all facts and possibilities concernig the course of dying and death to occur to self. Type II ; 'life-after-life negator'. Three P-samples. Time and process of death is the destiny of each person. Death means 'darkness' and 'end to every thing, the absolute end'. Yet, wish physical integrity at the dying and after death. Type III ; 'life-after-life believer'. Six P-samples. Men are travellers passing by this life bound to the life-after-life. Priority concerns are on the activities to prepare self for the eternal life ahead. Disregard premature and sudden death. Type IV ; 'here-now believer' Five P-samples. Positive regard to the cremation of the body and donation of the organs on death. Regard religious and customary post-motem rituals meaningless. Negate life-after life. Type V; 'believer of rituals'. Five P-samples. Death being accepted as a part of, a natural end to, and destiny of human life. Concerned to ensure a dignified end to personal life and dignified post-mortem rituals. Type VI ; 'Realist'(derived from Type I). Two P-samples. Life and death as universal reality. The abrupt death at golden age at the peak of happiness is favored to avoid inevitable physical and mental distress of self and the family. Agreed to the cremation of the body. Disregard rituals. Type VII : 'Fatalist' (derived from Type II). Five P-samples. Not favored, yet, all man are destined to death, the inevitable end of all living beings. To ensure dignified end by personal consummation, information on one's dying and imminent death are to be shared. Type VIII ; 'reality avoider'(derived from Type III). One P-sample. Negative to longevity, artificial prolongation of, meaningless and distressful life. Highly positive to postmortem organ donation.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Journal of Korean Clinical Health Science
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• v.2 no.3
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• pp.188-194
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• 2014

Purpose. The aim of this study was to provide for guidance of life, counsel and check their mental condition and analysis of correlation between MBTI personality type and emotional experience in university students. Methods. Data was analyzed by students whom participated in the research on the diagnose of mind of students from m university men and woman who accomplished to MBTI personality survey. Results. These result emotional experience of male-female that had deserved hospitality(p=0.22) statistically. This result had deserved emotional experience of extraversion personality of MBTI personality type in hospitality(p=0.000),introvert personality type in interpersonal sensitivity(p=0.002). It had deserved thinking extraversion personality type in obsessive-compulsive(p=0.000)emotional personality type in depression(p=0.000)in hostility(p=0.000). It had deserved judgement personality type in interpersonal sensitivity(p=0.043). Conclusions. The results of this study were as follow. Frist as a result of MBTI personality type of emotional experience on extraversion it was found that hospitality was leveled high and personality type of introversion is that Interpersonal sensitivity was leveled high. Thinkful personality type was leveled high on obsessive-compulsive. As a result of this study, personality indexes of MBTI of university student, it was found that there was related to emotional experience.

• Asian-Australasian Journal of Animal Sciences
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• v.17 no.2
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• pp.183-192
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• 2004

The effect of eight varieties of grain and forage type whole crop rice (Oryza sativa L Japonica) each harvested at four stages of maturity were investigated for morphology and yield, proportion of botanical fractions, fermentatability and chemical composition in an $8{\times}4$ factorial experiment. All crops were sown in 1997 at Saitama Prefecture, Japan under identical condition and harvested on 10, 22, 34 and 45 days after flowering in 1998. Total DM yield of forage type varieties was similar to that of the highest yield of grain type varieties. However, while yield of forage type varieties was attributed to higher proportion of straw than head, the reverse was in the case of grain type varieties. Yield in line with the proportion of head increased (p<0.001), but in contrast proportion of straw decreased (p<0.001) with the increase in maturity. Silage fermentability of grain type varieties was better than forage type varieties. Fermentability improved with the increase (p<0.001) in maturity suggesting that the moisture content should be reduced to improve fermentation quality. Forage type varieties contained higher (p<0.001) ash, crude fat (EE), organic cell wall (OCW) and acid detergent fiber (ADF), but contained lower crude protein (CP), organic cell content (OCC), CP in OCC and nitrogen-free cell wall extract (NCWFE) than the grain type varieties. The ash, CP, EE, Oa (60% digestible OCW), Ob (40% digestible OCW), OCW, ADF and acid detergent lignin (ADL) decreased (p<0.001), but OCC and NCWFE increased (p<0.001) with the increase in maturity. It is concluded that stage of maturity not only increases yield and proportion of head, but also improved the fermentation quality and increases quality chemical composition (except CP) of whole crop rice. Forage type varieties may be as good as grain type varieties in terms of yield, but fermentation quality and chemical composition may not be as good as that of grain type varieties.