• Elastomers and Composites
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• 제35권1호
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• pp.53-62
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• 2000

아연 도금된 강철 타이어 코드를 아세틸렌 또는 부타디엔 가스를 이용한 플라즈마 고분자 중합으로 고무와의 접착성 향상을 위하여 코팅하였다. 플라즈마의 세기, 중합 시간 및 가스의 압력을 변화시키면서 플라즈마 고분자 중합을 실시하였으며, 아르곤 가스를 이용한 에칭도 실시하였다. 또한 플라즈마 중합시에 아르곤, 질소 또는 산소를 담체 가스로 사용하여 접착성 향상으로 도모하였으며, 접착성은 TACT 방법으로 측정하였다. 아르곤 에칭 (90W, 10min, 30mTorr) 후에 아르곤 가스를 (25/5 : 아세틸렌/아르곤) 담체로 사용하여 아세틸렌 플라즈마 중합 (10W, 30sec, 30mTorr)으로 코팅된 타이어 코드가 285N의 접착력으로 가장 좋은 결과를 보였으며, 이는 황동으로 코팅된 타이어 코드의 290N과 같은 수준의 접착력이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• 대한전자공학회논문지
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• 제24권1호
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• pp.73-78
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• 1987

The physical mechanism of a RF discharge used in photoresist stripping and etching process are not well understood and, plasma reactor design and the determination of optimum operating coditions are done largely on empirical basis. We analyzed the discharge process through the measurement of plasma characteristics and applied out results tothe analysis of the photoresist stripping. We investigated the effects of plasma electron density, neutral oxygen gas pressure and electrode temperature on the stripping rates and related their effects with the characteristics of plasma.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.473-474
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• 2008

This paper proposes that the relative transmittance and emission intensity measured via optical emission spectroscopy (OES) is a useful for fault detection of reactive ion etch process. With the increased requests for non-invasive as well as real-time plasma process monitoring for fault detection and classification (FDC), OES is suggested as a useful diagnostic tool that satisfies both of the requirements. Relative optical transmittance and emission intensity of oxygen plasma acquired from various process conditions are directly compared with the process variables, such as RF power, oxygen flow and chamber pressure. The changes of RF power and Pressure are linearly proportional to the emission intensity while the change of gas flow can be detected with the relative transmittance.

• Journal of Information Display
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• 제10권3호
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• pp.111-116
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• 2009

In this paper, a plasma-assisted patterning method for the organic layers of organic light-emitting diodes (OLEDs) and its effect on the OLED performances are reported. Oxygen plasma was used to etch the organic layers, using the top electrode consisting of lithium fluoride and aluminum as an etching mask. Although the current flow at low voltages increased for the etched OLEDs, there was no significant degradation of the OLED efficiency and lifetime in comparison with the conventional OLEDs. Therefore, this method can be used to reduce the ohmic voltage drop along the common top electrodes by connecting the top electrode with highly conductive bus lines after the common organic layers on the bus lines are etched by plasma. To further analyze the current increase at low voltages, the plasma patterning effect on the OLED performance was investigated by changing the device sizes, especially in one direction, and by changing the etching depth in the vertical direction of the device. It was found that the current flow increase at low voltages was not proportional to the device sizes, indicating that the current flow increase does not come from the leakage current along the etched sides. In the etching depth experiment, the current flow at low voltages did not increase when the etching process was stopped in the middle of the hole transport layer. This means that the current flow increase at low voltages is closely related to the modification of the hole injection layer, and thus, to the modification of the interface between the hole injection layer and the bottom electrode.

• Journal of Electrical Engineering and Technology
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• 제7권6호
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• pp.983-989
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• 2012

The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.650-650
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• 2013

Although imprinted nanopatterns of organic polymer can be modified by the heat treatment [1], it generally requires high process temperatures and is material-dependent since the heat-induced mass loss of the organic polymer is greatly affected by its chemical characteristics. When oxygen is added during the annealing process, one can reduce the process temperature as well as the dependence of the materials. With the oxygen, line width reduction of a polymer (SU-8) patterns could be accomplished at temperature of as low as $250^{\circ}C$ which was not possible in the heat only process. This oxidative line width reduction can be dramatically promoted with the introduction of oxygen plasma. The oxygen plasma, with its highly-reactive oxygen species, vigorously etches away the organic materials, proven to be extremely effective line with reduction method. It is, however, very hard to control the extent and homogeneity of the etching, particularly of very fine patterns. Here, we report an effective and reliable line width reduction method of imprinted nanopatterns by combined plasma and heat treatment. The merits of this process include the reduction of process temperature, time and material-dependence.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.384.2-384.2
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• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.188-192
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• 2000

In this study PZT etching was performed using planar inductively coupled Ar/Cl$_2$/BCI$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$. X-ray photoelectron spectroscopy(XPS) analysis for films composition of etched PZT surface was utilized. The chemical bond of PbO is broken by ion bombardment and Cl radical, and the peak of metal Pb in a Pb 4f narrow scan begins to appear upon etching. As increasing additive BCl$_3$content the relative content of oxygen decreases rapidly in contrast with etch rate of PZT thin film. So we though that the etch rate of PZT thin film increased because abundant B and BCl radicals made volatile oxy-compound such as B$_{x}$/O$_{y}$ and/or BClO$_{x}$ bond. We achieved etch profile of about 80$^{\circ}$ at Ar(20)/BCl$_3$(80) gas mixing condition and substrate temperature of 8$0^{\circ}C$TEX>X>.