• 한국결정성장학회지
• /
• 제11권1호
• /
• pp.38-42
• /
• 2001

Electric and dielectric(Ba,Sr)$TiO_3$[BST] thin films for emtal-Insulator-Semiconductor(MIS) capacitors have been studied. BST thin films wre deposted on p-Si(100) substrates bythe RF magnetron sputtering with tempratue range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of Al/BST/$SiO_2$/Si sandwich structure were evaluated ot redcue the leakage current density. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. In order to reduce the leakage current in MIS capacitor, high quality $SiO_2$ layer was deposited on bare p-Si substrate. Depending on the oxygen pressure and substrate temperature both positive and negative polarities of effective oxide charge in the MIS capacitors were evaluated. It is considered that the density of electronic states, generated at the BST/$SiO_2$/p-Si interface due to the asymmetric structure within BST/$SiO_2$/Si structure, and the oxygen vacancy content has influence on the behavior of oxide charge.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.1445-1447
• /
• 2008

Micro crystal structure of polycrystalline MgO film is controlled by adjusting the energy of particles arrived at the substrate during deposition. The change of crystal structure affects on the total area of (200) surface where the oxygen vacancies are formed easily, resulting in the change of secondary electron emission (SEE) coefficient($\gamma$).

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1999년도 추계종합학술대회 논문집
• /
• pp.191-194
• /
• 1999

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.

• Transactions on Electrical and Electronic Materials
• /
• 제16권1호
• /
• pp.34-36
• /
• 2015

Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.

• 한국표면공학회지
• /
• 제39권6호
• /
• pp.288-294
• /
• 2006

Alloys of TiAl-Mn-(0, 5, 10)wt.% $Y_2O_3$ were prepared by a powder metallurgical route, and their oxidation behavior was studied at 800, 900 and $1000^{\circ}C$ in 1 atm of air. The scale formed on the alloys consisted of $TiO_2$ and $Al_2O_3$ oxides. During oxidation, Mn tended to diffuse outward, whereas oxygen diffused inward. The dispersoids of $T_2O_3$, which segregated at the matrix grain boundaries, acted as a diffusion channel for cations and oxygen ions, nucleation sites for oxides, and vacancy annihilation sites. $T_2O_3$ increased the scale thickness, but improved the scale adherence.

• 한국전기전자재료학회논문지
• /
• 제27권2호
• /
• pp.71-75
• /
• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• 한국전기전자재료학회논문지
• /
• 제24권9호
• /
• pp.697-700
• /
• 2011

Thin-film transistors(TFTs) with magnesium zinc tin oxide(MZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Mg contents in MZTO system. Because the Mg has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy ($V_O$). As a result, the Mg act as carrier suppressor and oxygen binder in the MZTO as well as a Vth controller.

• 한국안전학회지
• /
• 제3권2호
• /
• pp.49-53
• /
• 1988

The perovskite-type compounds $La_{1-x}Ca_xCoO_3$ were synthesized, their thermochemical properties and the gaseous sensitivity were investigated in ethanol vapor. The maximum response for detecting gas corresponded with the exothermic peak of DTA experiment. In any case the substituent was increased, the responsive ratio for detecting gas was grown upon. However, the needed time for response was later, and the operating temperature was elevated. The mechanism of this electrical conductivity was explained by the oxygen ionic diffusion through oxygen vacancy produced by the substituent.

• Bulletin of the Korean Chemical Society
• /
• 제9권2호
• /
• pp.81-84
• /
• 1988

The CO oxidation was performed on $H_2$-reduced NiO-${\alpha}-Fe_2O_3$ in the temperature range 150-$250^{\circ}C$. The kinetic study and the conductivity measurements indicate the oxidation reaction follows Langmuir-Rideal type process that is uncommon in heterogeneous catalyst$^1$. No active site is found on the catalyst surface for CO adsorption, but an oxygen vacancy adsorbs an oxygen, and this step is rate initiation. The partial orders are half for $O_2$ and first for CO, respectively. Apparent activation energy for over-all reaction is 9.05 kcal/mol.

• 한국전기전자재료학회논문지
• /
• 제32권4호
• /
• pp.276-280
• /
• 2019

In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC ($ZnO-Zn_2BiVO_6-Co_3O_4-Cr_2O_3-CaCO_3$) varistor, with the liquid-phase sintering aid $Zn_2BiVO_6$ developed by our laboratory. The ZZCCC varistor sintered at $1,200^{\circ}C$ exhibited excellent nonlinear current-voltage characteristics (${\alpha}=63$), with oxygen vacancy ($V_o^*$ ; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if $Zn_2BiVO_6$ is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.