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http://dx.doi.org/10.4313/JKEM.2011.24.9.697

Electrical Properties of Mg Doped ZnSnO TFTs Fabricated by Solution-process  

Choi, Jun-Young (Electronic Materials Center, Korea Institute of Science and Technology)
Park, Ki-Ho (Electronic Materials Center, Korea Institute of Science and Technology)
Kim, Sang-Sig (Semiconductor Engineering, University of Korea)
Lee, Sang-Yeol (Electronic Materials Center, Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.9, 2011 , pp. 697-700 More about this Journal
Abstract
Thin-film transistors(TFTs) with magnesium zinc tin oxide(MZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Mg contents in MZTO system. Because the Mg has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy ($V_O$). As a result, the Mg act as carrier suppressor and oxygen binder in the MZTO as well as a Vth controller.
Keywords
Solution-process; Transistor; Threshold voltage shift; Oxide semiconductor;
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