• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.163-164
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• 2012

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition system. The substrate with oxygen incorporation and the substrate without oxygen incorporation were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries) of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of oxygen incorporated substrate, the nanosized carbon coils were prevail on the substrate surface. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values between the substrate with oxygen incorporation and the substrate without oxygen incorporation.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.162-165
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• 1991

Oxygen behaviors in CZ-silicon wafer, grown by the Lucky Advanced Materials Inc. that is a pioneer of silicon material industries in Korea, were investigated to simulate effects on the device performance of oxygen, neglecting the effect of other impurity content, defects and thermal history. Silicon wafers were annealed through simulated 16K SRAM thermal cycle. As initial oxygen concentration increased up to 16.7ppma the amount of oxygen precipitation increased up to 10.6ppma and the bulk microdefect density increased up to $10.3{\times}10^3/mm^2$, but the depth of the denuded zone decreased to $5.0{\mu}m$

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.96-101
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• 2003

Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.69-74
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• 1995

The effects of TCA incorporation during annealing process on the SIMOX quality is studied. Silicon wafers are implanted with heavy dose of oxygen ions, and are annealed at $1300^{\circ}C$ for 4 hours. The annealing process is splitted into three conditions due to some differences of low temperature preliminary annealing step which are without pre-annealing step. The specimens are analyzed by several methods, such as AES, XTEM, and TRXFA. TCA incorporation during pre-annealing step is effective in dislocation density reduction and heavy metal content reduction.

• Journal of Microbiology and Biotechnology
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• v.20 no.2
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• pp.346-349
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• 2010

Coenzyme $Q_{10}$ ($CoQ_{10}$) production from Rhizobium radiobacter T6102 was monitored under various oxygen supply conditions by controlling the agitation speeds, aeration rates, and dissolved oxygen levels. As the results, the $CoQ_{10}$ production was enhanced by limited oxygen supply. To investigate whether the $CoQ_{10}$ production is associated with its physiological functions of electron carrier and antioxidant, the effects of sodium azide and hydrogen peroxide on the $CoQ_{10}$ production were studied, showing that the $CoQ_{10}$ contents were slightly enhanced with increasing sodium azide (up to 0.4 mM) and hydrogen peroxide (up to $10\;{\mu}M$) concentrations. These results suggest the plausible mechanism where the limited electron transfer stimulating the environments of limited oxygen supply and oxidative stress could accumulate the $CoQ_{10}$, providing the relationship between the $CoQ_{10}$ physiological functions and its regulation system.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.690-693
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• 2003

An Si substrate (100) was oxidized at $400^{\circ}C$ in inductively coupled oxygen plasma. Interstitial oxygen was found in the Si substrate at the initial stage of oxidation by IR measurements. An x-ray rocking curve of Si substrates showed a lower peak intensity due to lattice distortion by the interstitial oxygen. The refractive index of thin oxides, below which interstitial oxygen existed in the Si substrate, was smaller than the refractive index of thick oxides, below which no interstitial oxygen existed. The interstitial oxygen was found by plasma oxidation using $O_{2}$ gas and $N_{2}O$ gas. The inductively coupled plasma oxidation using $N_{2}O$ gas was performed by atomic oxygen, not by molecular oxygen, indicating that atomic oxygen in plasma is responsible for the incorporation of interstitial oxygen.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.49-53
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• 2009

The oxygen barrier films were formed on poly(ethylene terephthalate) (PET) substrate by a sol-gel process using 3-aminoproprytrimethoxysilane (APTMOS). The effects of solvent type, coating times and incorporation of fumed silica on oxygen permeability coefficient were investigated. The APTMOS coating film prepared from methanol as a solvent exhibited higher oxygen barrier properties than that using THF. The oxygen permeability coefficient of coated film with APTMOS/methanol by coating 7 times was measured to be $2.28{\times}10^{-6}$, while that of PET film was $1.16{\times}10^{-4}$ GPU. The addition of fumed silica does not affect the oxygen barrier properties. It may be explained that silica particles disrupt chain packing, which leads to an increase in free volume for permeation.

• Journal of Electrochemical Science and Technology
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• v.9 no.3
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• pp.212-219
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• 2018

Perovskite type ceramic membranes which exhibit dual ion conduction (proton and oxygen ion conduction) can permeate water and can aid solving operational problems such as temperature gradient and carbon deposition associated with a working solid oxide fuel cell. From this point of view, it is crucial to reveal water transport mechanism and especially the nature of the surface sites that is necessary for water incorporation and evolution. $BaCe_{0.8}Y_{0.2}O_{3-{\alpha}}$ (BCY20) was used as a model proton and oxygen ion conducting membrane in this work. Four different catalytically modified membrane configurations were used for the investigations and water flux was measured as a function of temperature. In addition, CO was introduced to the permeate side in order to test the stability of membrane against water and $CO/CO_2$ and post operation analysis of used membranes were carried out. The results revealed that water incorporation occurs on any exposed electrolyte surface. However, the magnitude of water permeation changes depending on which membrane surface is catalytically modified. The platinum increases the water flux on the feed side whilst it decreases the flux on the permeate side. Water flux measurements suggest that platinum can block water permeation on the permeate side by reducing the access to the lattice oxygen in the surface layer.

• Bulletin of the Korean Chemical Society
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• v.17 no.4
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• pp.324-330
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• 1996

We examined the formal oxidation states of Pb and Cu in the Pb2CuO4 slab of Pb2Sr2ACu3O8(A=Y1-xCaxor Nd1-xSrx) and their possible changes by oxygen incorporation in the Cu layer of the slab by performing tight-binding band electronic structure calculations on the Pb2CuO4+δ slab. Our results show that the most likely oxidation state of Pb is +2 and that of Cu is +1 for the Pb2CuO4 slab prior to oxidation. With small δ values, the oxygen incorporation occurs by the formation of such chain fragments as in YBa2Cu3O7-y along the a+b axis. The four-coordinate Cu atoms in the chain fragments are in the +3 oxidation states. For values of δ larger than 0.5, however, an additional oxygen (Oad) goes to the site along the b axis to form short Pb-Oad distances oxidizing Pb2+ to Pb4+. This change in the Pb oxidation state leads to the suppression of superconductivity due to the decrease of holes in the CuO2 layer.

• Korean Journal of Materials Research
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• v.32 no.8
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• pp.339-344
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• 2022

The lattice oxygen mechanism (LOM) is considered one of the promising approaches to overcome the sluggish oxygen evolution reaction (OER), bypassing -OOH^* coordination with a high energetic barrier. Activated lattice oxygen can participate in the OER as a reactant and enables O^*-O^* coupling for direct O₂ formation. However, such reaction kinetics inevitably include the generation of oxygen vacancies, which leads to structural degradation, and eventually shortens the lifetime of catalysts. Here, we demonstrate that Se incorporation significantly enhances OER performance and the stability of NiFe (oxy)hydroxide (NiFe) which follows the LOM pathway. In Se introduced NiFe (NiFeSe), Se forms not only metal-Se bonding but also Se-oxygen bonding by replacing oxygen sites and metal sites, respectively. As a result, transition metals show reduced valence states while oxygen shows less reduced valence states (O^-/O₂^2-) which is a clear evidence of lattice oxygen activation. By virtue of its electronic structure modulation, NiFeSe shows enhanced OER activity and long-term stability with robust active lattice oxygen compared to NiFe.