• 제목/요약/키워드: Oxide reliability

검색결과 267건 처리시간 0.026초

High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications

  • Kim, Sang-Gi;Won, Jong-Il;Koo, Jin-Gun;Yang, Yil-Suk;Park, Jong-Moon;Park, Hoon-Soo;Chai, Sang-Hoon
    • Transactions on Electrical and Electronic Materials
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    • 제17권5호
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    • pp.302-305
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    • 2016
  • In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.

UV-excited $F_2/H_2$를 이용한 실리콘 자연산화막 제거에 관한 연구 (A Study on the Removal of Native Oxide on a Silicon Surface Using UV-Excited $F_2/H_2$)

  • 최성호;최진식;김성일;구경완;천희곤
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1528-1530
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    • 1997
  • As device size shrinks, contamination will increasingly affect the reliability and yield of device. Therefore, contaminants must be removed from the surfaces of Si wafers prior to each process. But it becomes out increasingly difficult to clean silicon surfaces with finer patterns by the conventional wet treatment because of the viscosity and surface tension of solutions. Hence, a damage less dry cleaning process is needed for the silicon surfaces. For the removal of Si native oxide by UV-enhanced dry cleaning. $F_2$ gas and $F_2/H_2$ mixed gas were applied. As a result of analysis, UV-enhnaced $F_2/H_2$ treatment is more suitable than UV-enhanced $F_2$ treatment for removal of native oxide on the surfaces of Si wafers.

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산화물 반도체 소재 및 소자 기술

  • 정우석;양신혁;유민기;박상희;조두희;윤성민;변춘원;정승묵;조경익;황치선
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.4.2-4.2
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    • 2009
  • 산화아연 (ZnO)으로 대표되는 산화물반도체는 최근 다양한 비정질 산화물반도체들이 개발되고 있고 높은 이동도와 저온공정 등의 장점으로, 실리콘 기반 박막소자 (비정질-Si, 또는 다결정-Si(LTPS) 트랜지스터)를 대체할 차세대 박막 트랜지스터 (Thin-Film Transistor)의 핵심소재로 관심을 모으고 있다. 또한, 산화물 반도체는 근본적으로 투명하므로, 투명 전극 및 투명 기판재료와 함께 투명 디스플레이도 구현시킬 수 있을 것이다. 그렇지만, 핵심 전자소재로서 향후 디스플레이 및 디바이스에 성공적으로 적용되기 위해서는 소자의 특성 뿐만아니라, 전기적 신뢰성(reliability)을 강화시킬 필요가 있다. 본 발표에서는 In-Ga-Zn-oxide (IGZO), Zn-Sn-oxide (ZTO), Zn-In-Sn-oxide (ZITO) 및 도핑원소를 첨가한 소재에 이르기까지 다양한 산화물 반도체 소재 기술과 소자의 신뢰성 향상을 위한 기술 등을 소개할 것이다.

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자발가압 아산화질소를 이용한 하이브리드 로켓의 추력제어 내탄도 해석 및 실험적 검증 (Internal Ballistics Analysis and Experimental Validation of Thrust Modulation for Hybrid Rocket Using Self-Pressurizing Nitrous Oxide)

  • 한승주;문희장
    • 한국추진공학회지
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    • 제24권3호
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    • pp.47-58
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    • 2020
  • 본 연구에서는 Whitmore와 Chandler의 모델을 기반으로 아산화질소를 사용하는 blow-down 방식의 하이브리드 로켓의 유량제어를 통한 추력제어 및 내탄도 해석에 대한 연구를 수행하였다. 유량제어가 포함된 아산화질소의 탱크 내 거동에 대한 예측을 수행하였으며, 해석결과와 실험결과의 일치도가 상당히 높음을 확인하였다. 또한, 추력제어 내탄도 해석의 검증을 위하여 500 N급 하이브리드 로켓을 이용한 지상연소시험을 수행하였으며, 연소실 압력 및 추력 모두 실험결과와 해석결과가 상당히 일치함을 확인하여 추력제어 성능을 예측할 수 있는 모델링 기법을 제시하였다.

Human body model electrostatic discharge tester using metal oxide semiconductor-controlled thyristors

  • Dong Yun Jung;Kun Sik Park;Sang In Kim;Sungkyu Kwon;Doo Hyung Cho;Hyun Gyu Jang;Jongil Won;Jong-Won Lim
    • ETRI Journal
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    • 제45권3호
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    • pp.543-550
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    • 2023
  • Electrostatic discharge (ESD) testing for human body model tests is an essential part of the reliability evaluation of electronic/electrical devices and components. However, global environmental concerns have called for the need to replace the mercury-wetted relay switches, which have been used in ESD testers. Therefore, herein, we propose an ESD tester using metal oxide semiconductor-controlled thyristor (MCT) devices with a significantly higher rising rate of anode current (di/dt) characteristics. These MCTs, which have a breakdown voltage beyond 3000 V, were developed through an in-house foundry. As a replacement for the existing mercury relays, the proposed ESD tester with the developed MCT satisfies all the requirements stipulated in the JS-001 standard for conditions at or below 2000 V. Moreover, unlike traditional relays, the proposed ESD tester does not generate resonance; therefore, no additional circuitry is required for resonant removal. To the best of our knowledge, the proposed ESD tester is the first study to meet the JS-001 specification by applying a new switch instead of an existing mercury-wetted relay.

열간압연강에서 형성된 산화물 스케일의 잔류 응력 수치 분석을 위한 준해석적 방법 개발 (A Semi-analytical Approach for Numerical Analysis of Residual Stress in Oxide Scale Grown on Hot-rolled Steels)

  • 전융제;윤지강;이재민;김선호;김영천;남승훈;노우람
    • 소성∙가공
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    • 제33권3호
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    • pp.200-207
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    • 2024
  • In this study, we developed a semi-analytical approach for the numerical analysis of residual stress in oxide scales formed on hot-rolled steels. The oxide scale, formed during the hot rolling process, experiences complex interactions due to thermal and mechanical influences, significantly affecting the material's integrity and performance. Our research focuses on integrating various stress components such as thermal stress, growth stress, and creep behavior to predict the residual stress within the oxide layer. The semi-analytical method combines analytical expressions for each stress component with numerical integration to account for their cumulative effects. Validation through instrumented indentation tests confirms the reliability of our model, which considers thermal expansion coefficient (CTE) differences, scale growth, and creep-induced stress relaxation. Our findings indicate that thermal stress resulting from CTE differences significantly impacts the overall residual stress, with growth stress contributing a compressive component during cooling, and creep behavior playing a minor role in stress relaxation. This comprehensive approach enhances the accuracy of residual stress prediction, facilitating the optimization of material design and processing conditions for hot-rolled steel products.

고체산화물 연료전지 소재공정 요소기술 개발 현황 (Current Status of SOFC Materials and Processing Core Technology)

  • 이종호;손지원;김혜령;김병국;이해원
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.123.1-123.1
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    • 2010
  • The solid oxide fuel cell (SOFC) has attracted great deal of attention due to its high electrical efficiency, high waste-heat utilization, fuel flexibility, and application versatility. However, SOFC technology is still not matured enough to fulfill the practical requirements for commercialization. Therefore, all the research and development activities are mainly focused on a development of practically viable SOFCs with higher performance and better reliability. We were successful in fabricating high-performance anode-supported unit cells by employing hierarchically controlled multi-layered electrodes for both structural reliability and high performance. In addition, a novel composite sealing gasket made it possible to achieve excellent sealing integrity even with considerable surface irregularities in a multi-cell planar arrayed stack.

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에폭시 솔더 페이스트 소재와 적용 (Epoxy solder paste and its applications)

  • 문종태;엄용성;이종현
    • Journal of Welding and Joining
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    • 제33권3호
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    • pp.32-39
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    • 2015
  • With the simplicity of process and high reliability in chip or package bonding, epoxy solder paste (ESP) has been recently considered as a competitive bonding material. The ESP material is composed of solder powder and epoxy formulation which can remove oxide layers on the surface of solder powder and pad finish metal. The bonding formed using ESP shows outstanding bonding strength and suppresses electrical short between adjacent pads or leads owing to the reinforced structure by cured epoxy after the bonding. ESP is also expected to suppress the formation and growth of whisker on the pads or leads. With the mentioned advantages, ESP is anticipated to become a spotlighted bonding material in the assembly of flexible electronics and electronic modules in automotive vehicles.

Hot Carrier Reliability of Short Channel ($L=1.5{\mu}m$) P-type Low Temperature poly-Si TFT

  • Choi, Sung-Hwan;Shin, Hee-Sun;Lee, Won-Kyu;Kuk, Seung-Hee;Han, Min-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.239-242
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    • 2008
  • We have investigated the reliability of short channel ($L=1.5{\mu}m$) p-type ELA poly-Si TFTs under hot carrier stress. Threshold voltage of short channel TFT was significantly more shifted to positive direction than that of long channel TFT under the same stress. This result may be attributed to electron trapping at the interface between poly-Si film and gate oxide layer.

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High-performance InGaN/GaN-based Light-emitting Diodes Using Advanced Technical Approaches

  • Jang, Ja-Soon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.108-108
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    • 2012
  • High-performance GaN-based light emitting diodes (LEDs) with high efficiency and excellent reliability have been of technological importance forapplications in full color display, automotive lighting, and solid state lighting. To realize high-performance and excellent-reliability LEDs, various technologies such as surface texturing, transparent conducting oxide, surface Plasmon, highly p-conduction layer, current blocking layer, photon-enhanced layer, and nanostructures have been extensively investigated. Among them, advanced core technologies based on how to suppress surface leakage and current crowding, how to enhance current injection efficiency and output power, and how to resist electrostatic damage will be displayed and discussed using our reported and preliminary results. New approaches like integrated LEDs will be also introduced and discussed.

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