• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.24-27
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• 2001

The end point of oxide chemical mechanical polishing (CMP) have determined by polishing time calculated from removal rate and target thickness of oxide. This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, it was investigated the removal properties of PETEOS blanket wafers, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the oxide removal amounts of blanket and patterned wafers. We analyzed this relationship, and the post CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafer (correlation factor: 0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formula. As the result of repeatability test, the differences of calculated polishing time and actual polishing time was about 3.48 seconds. If this time is converted into the thickness, then it is from 104 $\AA$ to 167 $\AA$. It is possible to be ignored because process margin is about 1800 $\AA$.

• Restorative Dentistry and Endodontics
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• v.19 no.2
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• pp.513-533
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• 1994

The smooth surface after polishing of composite resin contributes to the patient's comfort, and appearance and longevity of the restoration. This study was performed for the quantitative analysis of the effects of the various finishing and polishing instruments on the surface roughness and reflectivity of the microfill, and hybrid composite resins. Cylindrical specimens 2mm thick and 10mm in diameter of Silux Plus, Durafill VS ; Z100, Prisma TPH, Brilliant, and Herculite XR composite resin were polymerized under the matrix strip. 18 specimens for each composite resin materials were divided into 6 groups ; 5 experimental groups were abraded with # 600 sand paper to remove resin-rich layer, except control. Thereafter, using diamond bur(Mani Dia-Burs), carbide bur(E. T. carbide set 4159), rubber point(Composite polishing kit), aluminum-oxide disk(Sof-Lex disk), polishing paste(Enhance system) ; each specimen was polished to its best achievable surface according to manufacturer's directions. Final polished surfaces were evaluated for the surface roughness with profilometer(${\alpha}$-step 200, Tencor instruments, USA) and for the reflectivity with image analyser(Omniment Image Analyser, Buehler, USA). The results were as follows. 1. Polishing paste or aluminum-oxide disk finish in the microfill, and hybrid composite resins was as smooth as matrix strip finish on the surface roughness test. 2. Polishing paste or aluminum-oxide disk finish in the microfill ; polishing paste finish in the hybrid composite resins was as reflective as matrix strip finish on the refectivity test. 3. For the polishing paste, there were no significant differences between the composite resin materials on the surface roughness and refectivity tests. 4. For the aluminum-oxide disk, the best result was obtained with the microfill composite resin on the surface roughness and reflectivity test. 5. Diamond bur, carbide bur, and rubber point were inappropriate for the final polishing instruments.

• The Journal of Advanced Prosthodontics
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• v.13 no.4
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• pp.258-267
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• 2021

PURPOSE. The purpose of this study was to compare the surface roughness, phase transformation, and surface topography of dental zirconia with three different yttrium oxide compositions under same grinding and polishing conditions. MATERIALS AND METHODS. Three zirconia disks (IPS e.max ZirCAD LT, MT, MT multi, Ivoclar Vivadent AG, Schaan, Liechtenstein) were selected for experimental materials. Sixty-nine bar-shaped specimens were fabricated as 12.0 × 6.0 × 4.0 mm using a milling machine and glazing was conducted on 12.0 × 6.0 mm surface by same operator. With a custom polishing device, 12.0 × 6.0 mm surfaces were polished under same condition. Surface roughness (Ra[㎛]) was measured before grinding (C), after grinding (G), and at every 3 steps of polishing (P1, P2, P3). X-ray diffraction and FE-SEM observation was conducted before grinding, after grinding, and after fine polishing (P3). Statistical analysis of surface roughness was performed using Kruskal-Wallis test and Mann-Whitney-U test was used as a post hoc test (α = .05). RESULTS. There were no significant differences of surface roughness between LT, MT, and MM groups. In LT, MT, and MM groups, P3 groups showed significantly lower surface roughness than C groups. X-ray diffraction showed grinding and polishing didn't lead to phase transformation on zirconia surface. In FE-SEM images, growths in grain size of zirconia were observed as yttrium oxide composition increases. CONCLUSION. Polished zirconia surface showed clinically acceptable surface roughness, but difference in yttrium oxide composition had no significant influence on the surface roughness. Therefore, in clinical situation, zirconia polishing burs could be used regardless of yttrium oxide composition.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.12
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• pp.1259-1264
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• 2013

This study has focused on the application of magnetic assisted polishing for ELID ground surface of aluminum oxide ceramics. Aluminum oxide ceramics has been widely used as advanced materials for electric, optic, mechanic, chemical usage and so on. In this study, ELID grinding and magnetic assisted polishing technology was adopted for high-effective manufacturing and high quality surface of ceramic parts. The characteristic of MAP machining have been evaluated by the value of surface roughness and surface profile before and after magnetic assisted polishing. As the results of experiments, the surface roughness after magnetic assisted polishing has shown a significant improvement and the surface roughness was more improved when the feed rate of tool became slow.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.501-504
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• 1999

In the shallow trench isolation(STI) chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control within- wafer-non-uniformity, and the possible defects such as nitride residue and pad oxide damage. These defects after STI CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI filling and STI CMP were discussed. It is represented that the nitride residue can be occurred in the condition of high post CMP thickness and low trench depth. In addition there are remaining oxide on the moat surface after reverse moat etch. It means that reverse moat etching process can be the main source of nitride residue. Pad oxide damage can be caused by over-polishing and high trench depth.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.174-179
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• 2012

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.167-172
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• 2006

Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.1-5
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• 2001

STI(shallow trench isolation)-CMP(chemical mechanical polishing) process have been substituted for LOCOS(local oxidation of silicon) process to obtain global planarization in the below sub-0.5㎛ technology. However TI-CMP process, especially TI-CMP with RIE(reactive ion etching) etch back process, has some kinds of defect like nitride residue, torn oxide defect, etc. In this paper, we studied how to reduced torn oxide defects after STI-CMP with RIE etch back processed. Although torn oxide defects which can occur on trench area is not deep and not severe, torn oxide defects on moat area is not deep and not severe, torn oxide defects on moat area is sometimes very deep and makes the yield loss. Thus, we did test on pattern wafers which go through trench process, APECVD process, and RIE etch back process by using an IPEC 472 polisher, IC1000/SUVA4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the origin of torn oxide defects.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.221-224
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• 2002

Recently, simulation of Chemical Mechanical Polis hing is becoming more important because Process parameters on the material removal rate are complicated. And pattern-depent effects are a key concern in CMP processes. In this paper, we have been studied the changes of pattern density vs. oxide thickness with Stine's simulation model. We also have estimated the effective density using optimal window size with density mask, and have made a study of the change of oxide thickness as a function of polishing time.