• Title/Summary/Keyword: Oxide layers

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Co-firing of Solid Oxide Fuel Cell Using Pore Former (기공전구체를 이용한 고체전해질 연료전지의 동시소성 연구)

  • 문지웅;이홍림;김구대;김재동;이해원
    • Journal of the Korean Ceramic Society
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    • v.35 no.3
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    • pp.273-279
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    • 1998
  • Unite cell of soid oxide fuel cell (SOFC) that consists of a dense yttria-stabilized zirconia(YSZ) electrolyte a porous nickel-YSZ cermet anode and a porous strontium- doped lanthanum manganate(LSM) cathod was fabricated from using pore former through co-firing technique. Initial sintering shrinkage rates of each layer were identified for fabricating SOFC. Heterogenous sintering was very effective in tailoring shrinkage rate for three layers. The powder tailoring necessary for shrinkage rate matching are as follows ; electrolyte of 60% TZ8YS/ 40% TZ8Y mixture anode of 51wt% NiO/49 wt% (70wt% TZ8YS/30 wt% UT ZrO2) mixture and cathode of 80% LSM/20% UT ZrO2 mixture . The overall sintering shrinkage rate differences of three layers using these compositions were maintained in a few percent.

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Electrical Characteristics of Devices with Material Variations of PMD-1 Layers (PMD-1 층의 물질변화에 따른 소자의 전기적 특성)

  • Seo, Yonq-Jin;Kim, Sang-Yong;Yu, Seok-Bin;Kim, Tae-Hyung;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1327-1329
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    • 1998
  • It is very important to select superior inter-layer PMD(Pre Metal Dielectric) materials which can act as penetration barrier to various impurities created by CMP processes. In this paper, hot carrier degradation and device characteristics were studied with material variation of PMD-1 layers, which were split by LP-TEOS, SR-Oxide, PE-Oxynitride, PE-Nitride, PE-TEOS films. It was observed that the oxynitride and nitride using plasma was greatly decreased in hot carrier effect in comparison with silicon oxide. Consequently, silicon oxide turned out to be a better PMD-1 material than PE-oxynitride and PE-nitride. Also, LP-TEOS film was the best PMD-1 material Among the silicon oxides.

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Effect of Ag Formation Mechanism on the Change of Optical Properties of SiInZnO/Ag/SiInZnO Multilayer Thin Films (SiInZnO/Ag/SiInZnO 다층박막의 Ag 형성 메카니즘에 따른 광학적 특성 변화)

  • Lee, Young Seon;Lee, Sang Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.5
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    • pp.347-350
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    • 2013
  • By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

Wireless Graphene Oxide-CNT Bilayer Actuator Controlled with Electromagnetic Wave (전자기웨이브에 의해 제어되는 무선형 그래핀-카본나노튜브 액츄에이터)

  • Xu, Liang;Oh, Il-Kwon
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2011.04a
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    • pp.282-284
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    • 2011
  • Based on graphene oxide and multi-walled carbon nanotube layers, a wireless bi-layer actuator that can be remotely controlled with an electromagnetic induction system has been developed. The graphene-based bi-layer actuator exhibits a large one-way bending deformation under eddy current stimuli due to asymmetrical responses originating from the temperature difference of the two different carbon layers. In order to validate one-way bending actuation, the coefficients of thermal expansion of carbon nanotube and graphene oxide are mathematically formulated in this study based on the atomic bonding energy related to the bonding length. The newly designed graphene-based bi-layer actuator is highly sensitive to electromagnetic wave irradiation thus it can trigger a new actuation mode for the realization of remotely controllable actuators and is expected to have potential applications in various wireless systems.

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Characteristics and Formation of Thermal Oxidative Film Silicon Carbide for MOS Devices (MOS 소자용 Silicon Carbide의 열산화막 생성 및 특징)

  • O, Gyeong-Yeong;Lee, Gye-Hong;Lee, Gye-Hong;Jang, Seong-Ju
    • Korean Journal of Materials Research
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    • v.12 no.5
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    • pp.327-333
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    • 2002
  • In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

In-situ Monitoring of Anodic Oxidation of p-type Si(100) by Electrochemical Impedance Techniques in Nonaqueous and Aqueous Solutions

  • 김민수;김경구;김상열;김영태;원영희;최연익;모선일
    • Bulletin of the Korean Chemical Society
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    • v.20 no.9
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    • pp.1049-1055
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    • 1999
  • Electrochemical oxidation of silicon (p-type Si(100)) at room temperature in ethylene glycol and in aqueous solutions has been performed by applying constant low current densities for the preparation of thin SiO2 layers. In-situ ac impedance spectroscopic methods have been employed to characterize the interfaces of electrolyte/oxide/semiconductor and to estimate the thickness of the oxide layer. The thicknesses of SiO2 layers calculated from the capacitive impedance were in the range of 25-100Å depending on the experimental conditions. The anodic polarization resistance parallel with the oxide layer capacitance increased continuously to a very large value in ethylene glycol solution. However, it decreased above 4 V in aqueous solutions, where oxygen evolved through the oxidation of water. Interstitially dissolved oxygen molecules in SiO2 layer at above the oxygen evolution potential were expected to facilitate the formation of SiO2 at the interfaces. Thin SiO2 films grew efficiently at a controlled rate during the application of low anodization currents in aqueous solutions.

Fuel-Flexible Anode Architecture for Solid Oxide Fuel Cells

  • Hwan Kim;Sunghyun Uhm
    • Applied Chemistry for Engineering
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    • v.34 no.3
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    • pp.226-240
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    • 2023
  • This paper provides an overview of the trends and future directions in the development of anode materials for solid oxide fuel cells (SOFCs) using hydrocarbons as fuel, with the aim of enabling a decentralized energy supply. Hydrocarbons (such as natural gas and biogas) offer promising alternatives to traditional energy sources, as their use in SOFCs can help meet the growing demands for energy. We cover several types of materials, including perovskite structures, high-entropy alloys, proton-conducting ceramic materials, anode on-cell catalyst reforming layers, and anode functional layers. In addition, we review the performance and long-term stability of cells based on these anode materials and assess their potential for commercial manufacturing processes. Finally, we present a model for enhancing the applicability of fuel cell-based power generation systems to assist in the realization of the H2 economy as the best practice for enabling distributed energy. Overall, this study highlights the potential of SOFCs to make significant progress toward a sustainable and efficient energy future.

Electrodeposited Cuprous oxide based p-n junction for photovoltaic devices with atomic layer deposited ZnO layers

  • Baek, Seung-Gi;Lee, Gi-Ryong;Jo, Hyeong-Gyun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.181-182
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    • 2013
  • 저온 공정을 통한 저가형의 태양전지를 만들기 위해 ALD 공정 법으로 Zinc oxide의 전도성을 조절하여 전기 증착법을 통해 성장시킨 Cuprous oxide와 p-n heterojunction을 구성하고 태양전지를 제작하였을 때 최적의 효율을 확인하였다. 전도성이 낮아질수록 전착법과의 p-n junction에서의 Jsc값이 증가하여 100도의 Zinc oxide의 경우 0.13%의 태양전지 효율을 보였다.

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Characterization of few-layered reduced graphene oxide (rGO) for standardization (소수의 층을 갖는 환원 graphene oxide(rGO) 표준화를 위한 물성분석)

  • Ahn, Hae Jun;Huh, Seung Hun;Jee, Youngho;Lee, Byeong Woo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.6
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    • pp.239-245
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    • 2022
  • Reduced graphene oxide (rGO) has attracted many attention and applications due to its excellent electrochemical ability. Therefore, standardization of rGO through structural and thermal analysis facilitates quality improvement and management, enabling users to increase efficiency and reduce relevant costs. For rGO and graphene-related materials, it is very important to determine the number of layers and define the resulting difference in physical properties. In this study, 3~4 layers of rGO-1 and 9~10 layers of rGO-2 were obtained from graphene oxide (GO) through a hydrazine reduction process. For the prepared rGOs, X-ray diffraction (XRD) pattern obtained a diffraction peak at 2θ≈25° related to (002) reflection was used to calculate the layer numbers by determining interlayer distance and FWHM value. To reduce the angular uncertainty, XRD data analysis was performed with angle correction using standard reference materials for X-ray powder diffraction analysis. Precise interlayer distance and number of layers were determined using OriginLab and open-source XRD diffraction analysis programs using the angle-corrected diffraction data. TG-DSC thermal analysis was performed to further standardize the physical properties of rGO samples.

Ag and Cu Precipitation in Multi-Layer Chip Inductors Prepared with V2O5 Doped NiCuZn Ferrites (V2O5 도핑된 NiCuZn 페라이트로 제조된 칩인덕터에서의 Ag/cu 석출)

  • Je, Hae-June;Kim, Byung-Kook
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.503-508
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    • 2003
  • The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.