Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
권호 표지
DOI QR코드

DOI QR Code

In-situ Monitoring of Anodic Oxidation of p-type Si(100) by Electrochemical Impedance Techniques in Nonaqueous and Aqueous Solutions

  • Published : 1999.09.20
Download PDF
⟨ Previous Next ⟩

Abstract

Electrochemical oxidation of silicon (p-type Si(100)) at room temperature in ethylene glycol and in aqueous solutions has been performed by applying constant low current densities for the preparation of thin SiO2 layers. In-situ ac impedance spectroscopic methods have been employed to characterize the interfaces of electrolyte/oxide/semiconductor and to estimate the thickness of the oxide layer. The thicknesses of SiO2 layers calculated from the capacitive impedance were in the range of 25-100Å depending on the experimental conditions. The anodic polarization resistance parallel with the oxide layer capacitance increased continuously to a very large value in ethylene glycol solution. However, it decreased above 4 V in aqueous solutions, where oxygen evolved through the oxidation of water. Interstitially dissolved oxygen molecules in SiO2 layer at above the oxygen evolution potential were expected to facilitate the formation of SiO2 at the interfaces. Thin SiO2 films grew efficiently at a controlled rate during the application of low anodization currents in aqueous solutions.

Keywords

References

  1. Electrochimica Acta v.37 Lewerenz, H. Z.
  2. Appl. Phys. Lett. v.60 Cahill, D. G.;Avouris, Ph
  3. J. Appl. Phys. v.36 Deal, B. E.;Grove, A. S.
  4. J. Electrochem. Soc. v.144 Khemka, V.;Chow, T. P.
  5. J. Electrochem. Soc. v.138 Fung, T.F.;Wong, H.;Cheng, Y.C.;Pun, C.K.
  6. J. Electrochem. Soc. v.114 Revesz, A. G.
  7. J. Electrochem. Soc. v.111 Duffek, E. F.;Mylroie, C.;Benjamini, E. A.
  8. J. Appl. Phys. v.76 Clark, K. B.;Bardwell, J. A.;Baribeau, J. M.
  9. Thin Solid Films v.168 Mende, G.;Hensel, H.;Fenske, F.;Flietner, H.
  10. J. Electrochem. Soc. v.127 Mende, G.
  11. J. Electrochem. Soc. v.141 Landheer, D.;Bardwell, J. A.;Clark, K. B.
  12. J. Electrochem. Soc. v.118 Croset, M.;Petreanu, E.;Samuel, D.;Amsel, G.;Nadai, J.P.
  13. J. Electrochem. Soc. v.142 Schmuki, P.;Bohni, H.;Bardwell, J. A.
  14. Spectroscopic Characterization Techniques for Semiconductor Thehnology, SPIE Vol.452 Glembocki, O. J.
  15. J. Appl. Phys. v.73 Hdiy, A. El.;Salace, G.;Petit, C.;Jourdain, M.;Meinertzhagen, A.
  16. Electrochimica Acta v.37 Chazalviel, J.-N.
  17. J. Electrochem. Soc. v.140 Bardwell, J. A.;Clark, K. B.;Mitchell, D. F.;Bisailliion, D. A.;Sproule, G. I.;MacDougall, B.;Graham, M. J.
  18. Physics of Semiconductor Devices($2^{th}$ ed.) Sze, S. M.
  19. Impedance Spectroscopy Macdonald, J. R.
  20. Rev. Mod. Phys. v.57 Atkinson, A.