• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1273-1276
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• 2007

We provide a newly developed dry etching process for the fabrication of ZnO-based oxide TFTs. The etching characteristics of ZnO (active layer) and $Al_2O_3$ (gate insulator) thin films were systematically investigated when the etching gas mixtures and their mixing ratios were varied in the heliconplasma etching system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.111-114
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• 2002

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of an air-exposed zinc oxide(ZnO) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the isomer of butyl acetate by an analysis with optical emission spectrosxopy. The etching ability of this plasma was evaluated by an emission intensity, etching time, rf power.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4449-4459
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• 2022

In this study, an NF₃ plasma etching reaction with a cobalt oxide (Co₃O₄) films grown on the surface of inorganic compounds using granite was investigated. Experimental results showed that the etching rate can be up to 1.604 mm/min at 380 ℃ under 150 W of RF power. EDS and XPS analysis showed that main reaction product is CoF₂, which is generated by fluorination in NF₃ plasma. The etching rate of cobalt oxide films grown on inorganic compounds in this study was affected by surface roughness and etch selectivity. This study demonstrates that the plasma surface decontamination can effectively and efficiently remove contaminated nuclides such as cobalt attached to aggregate in concrete generated when decommissioning of nuclear power plants.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.12-16
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• 2002

It is confirmed that the ITO(Indium Tin Oxide) thin films can be etched by low-temperature plasma at atmospheric pressure. The etching happened deepest at a hydrogen flow rate of 4 sccm, and the etch rate was 120 /min. The etching speed corresponded to the H$\alpha$* emission intensity The etching mechanism of the ITO thin films is as follows; thin films were reduced by H$\alpha$*, and the metal compound residues were detached from the substrate by reacting on the CH* The etching was started after etching time of initial 50 sec and above the threshold temperature of 145$^{\circ}C$. The activation energy of 0.16 eV(3.75 Kcal/mole) was obtained from the Arrehenius plots.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.236-243
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• 2004

The oxide etching process was characterized in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3CF_4$ gas chemistry. A statistical experimental design plus one center point was used to characterize relationships between process factors and etch response. The etch response modeled are etch rate, etch selectivity to TiN and uniformity. Etching uniformity was improved with increasing $CF_4$ flow ratio, increasing source power, and increasing pressure depending on source power. Characterization of via etching in $CHF_3CF_4$ MERIE using neural networks was successfully executed giving to highly valuable information about etching mechanism and optimum etching condition. It was found that etching uniformity was closely related to surface polymerization, DC bias, TiN and uniformity.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.222-225
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• 2008

We proposed the dry etching process recipe for the fabrication of In-Ga-Zn-O (IGZO)-based oxide TFTs, in which the etching behaviors of IGZO films were systematically investigated when the etching gas mixtures and their mixing ratios were varied. Good device characteristics of the fabricated TFT were successfully confirmed.

• Restorative Dentistry and Endodontics
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• v.13 no.1
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• pp.41-52
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• 1988

The purpose of this study was to investigate the pulpal responses to acid etching of dentine. Total 72 class V cavaties' were prepared on the healthy permanent teeth from 6 dogs, and were divided into 4 groups. These were filled with filling materials after acid etching with each etchant for 1 min. Control group ; ZOE filling without acid etching. Group 1: Zinc Oxide-Eugenol cement filling. Group 2: Drying with hot air and Zinc oxide-Eugenol cement filling. Group 3: Scotchbond application and silux filling. Group 4: Silux filling. The dogs were sacrificed after 1 week, 2 weeks, 3 weeks, 4 weeks, 5 weeks and 6 weeks following operation. The specimens were routinely prepared and stained with Hematoxylin and Eosin. Followings were the results obtained through microscopic examination. 1. There was mostly severe pulpal responses in case of Silux filling after acid etching of dentine. 2. The pulpal responses of Silux filling after acid etching and application of Scotch bond group were more severe compared to Zinc Oxide-Eugenol cement filling group, but less severe compared to Silux filling group after acid etching of dentine. 3. The pulpal responses of Zinc Oxide-Eugenol cement filling group were similar to those of Zinc Oxide-Eugenol cement filling after drying with hot air group. 4. There was slight pulpal responses in early stage in case of Zinc Oxide-Eugenol cement filling group, but recovered to normal state soon after.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.774-779
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• 1995

Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. In order to compare with Taguchi method, the contact oxide etching process carried out with different process parameters(CHF$_{3}$/CF$_{4}$ gas flow rate, chamber pressure, RF power and magnetic field intensity). Optimal etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. In this paper, as a final analysis of experimental results the optimal etching characteristics were obtained at the process conditions of CHF3/CF4 gas flow rate = 72/8 sccm, chamber pressure = 50 mTorr, RF power = 500 watts, and magnetic field intensity = 90 gauss.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.32-32
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• 1992

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.146-150
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• 2014

As a method of simple patterning of transparent conductive oxide (TCO) films deposited on flexible substrates, laser direct etching was carried out on TCO films sputtered on polycarbonate (PC) substrates. As a result of different binding energies in TCO films, indium tin oxide (ITO) and indium gallium zinc oxide (IGZO) were more easily etched than zinc oxide with different $Nd:YVO_4$ laser beam conditions.