• Journal of Electrochemical Science and Technology
• /
• v.9 no.2
• /
• pp.93-98
• /
• 2018

$MnO_2$, a metal oxide used as an electrode material in electrochemical capacitors (EDLCs), has been applied in binary oxide and conducting polymer hybrid electrodes to increase their stability and capacitance. We developed a method for electrodepositing Mn-Ni oxide/PANI, Mn-Ni oxide/PEDOT, and Mn-Ni-Ru oxide/PEDOT films on carbon paper in a single step using a mixed bath. Mn-Ni oxide/PEDOT and Mn-Ni-Ru oxide/PEDOT electrodes used in an electro-osmotic pump (EOP) have shown better efficiency compared to Mn-Ni oxide and Mn-Ni oxide/PANI electrodes through testing in water as a pumping solution. EOP using a Mn-Ni-Ru oxide/PEDOT electrode was also tested in a 0.5 mM $Li_2SO_4$ solution as a pumping solution to confirm the effect of the $Li^+$ insertion/de-insertion reaction of Ruthenium oxide on the EOP. Experimental results show that the flow rate increases with the increase in current in a 0.5 mM $Li_2SO_4$ solution compared to that obtained when water was used as a pumping solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.354-357
• /
• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.6
• /
• pp.486-491
• /
• 2017

Silver nanowire (AgNW) transparent electrode is one of next generations of flexible and transparent electrode. The electrode shows high conductivity and high transparency comparable to ITO. However, the electrode is weak against heat. The wires are separated into nanodots at temperature above $200^{\circ}C$. It causes the electrical resistance increase. Moreover, it is vulnerable to oxygen and moisture in the atmosphere. The improvement of thermal and moisture resistance of silver nanowire transparent electrode is the most important for commercializing. We proposed silver nanowires transparent electrode which is capped with very thin nickel oxide layer. The nickel oxide layer is five nanometers of thickness, but the heat and moisture resistance of the transparent electrode is effectively improved. The AgNW/NiO electrode can endure at $300^{\circ}C$ of temperature for 30 minutes, and resistance is not increased for 180 hours at $85^{\circ}C$ of temperature and 85% of relative humidity. We showed an applications of transparent and flexible heater using the electrode, the heater is operated more than $180^{\circ}C$ of temperature.

• Journal of Electrochemical Science and Technology
• /
• v.8 no.4
• /
• pp.274-281
• /
• 2017

This paper describes the simple fabrication of an electrode modified with electrochemically reduced graphene oxide (ERGO) for the simultaneous electrocatalytic detection of dopamine (DA), ascorbic acid (AA), and uric acid (UA). ERGO was formed on a glassy carbon (GC) electrode by the reduction of graphene oxide (GO) using linear sweep voltammetry. The ERGO/GC electrode was formed by subjecting a GO solution ($1mg\;mL^{-1}$ in 0.25 M NaCl) to a linear scan from 0 V to -1.4 V at a scan rate of $20mVs^{-1}$. The ERGO/GC electrode was characterized by Raman spectroscopy, Fourier transform infrared spectroscopy, contact angle measurements, electrochemical impedance spectroscopy, and cyclic voltammetry. The electrochemical performance of the ERGO/GC electrode with respect to the detection of DA, AA, and UA in 0.1 M PBS (pH 7.4) was investigated by differential pulse voltammetry (DPV) and amperometry. The ERGO/GC electrode exhibited three well-separated voltammetric peaks and increased oxidation currents during the DPV measurements, thus allowing for the simultaneous and individual detection of DA, AA, and UA. The detection limits for DA, AA, and UA were found to be 0.46, 77, and $0.31{\mu}M$ respectively, using the amperometric i-t curve technique, with the S/N ratio being 3.

• Journal of Electrochemical Science and Technology
• /
• v.3 no.4
• /
• pp.178-184
• /
• 2012

A porous nickel (P-Ni) substrate was prepared by selective leaching of zinc from pressed pellets containing powders of Ni & Zn in 4 M NaOH solution. Anodic deposition of manganese oxide onto the porous Ni substrate ($MnO_x$/P-Ni) formed nano-flakes of manganese oxide layers as revealed in SEM studies. Pseudocapacitance of this oxide electrode was evaluated by cyclic voltammetry (CV) and chronopotentiometry (CHP) in 2 M NaOH solution. The specific capacitance of the Mn oxide electrode was as high as 1515 F $g^{-1}$, which was ten times higher than Mn oxide deposited on a flat Ni-ribbon. 80% of capacity was retained after 200 charge/discharge cycles. The system showed no loss of activity in dry form over period of days. The impedance studies indicated highly conducting $MnO_x$/P-Ni substance and the obtained specific capacitance from impedance data showed good agreement with the charge/discharge measurements.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.10
• /
• pp.83-90
• /
• 1998

The effects of dopant activation anneal on GOI (Gate Oxide Integrity) of MOS capacitor with amorphous silicon gate electrode were investigated. It was found that the amorphous silicon gate electrode was crystallized and the dopant atoms were sufficiently activated by activation anneal. The mechanical stress of gate electrode that reveals large compressive stress in amorphous state, was released with increase of anneal temperature from $700^{\circ}C$ to 90$0^{\circ}C$. The resistivity of gate electrode polycrystalline silicon film is decreased by the increase of anneal temperature. The reliability of thin gate oxide and interface properties between oxide and silicon substrate greatly depends on the activation anneal temperature. The charge trapping characteristics as well as oxide reliability are improved by the anneal of 90$0^{\circ}C$ compare to that of $700^{\circ}C$ or 80$0^{\circ}C$. Especially, the lifetimes of the thin gate oxide estimated by TDDB method is 3$\times$10$^{10}$ for the case of $700^{\circ}C$ anneal, is significantly increased to 2$\times$10$^{12}$ for the case of 90$0^{\circ}C$ anneal. Finally, the interface trap density is reduced with relaxation of mechanical stress of gate electrode.

• Journal of the Korean Electrochemical Society
• /
• v.8 no.2
• /
• pp.106-114
• /
• 2005

This article covers the theoretical ac-impedance models for the analysis of oxygen reduction on the porous cathode electrode f3r solid oxide fuel cell (SOFC). Firstly, ac-impedance models were explained on the basis of the mechanism of oxygen reduction, which were classified into the rate-determining steps; (i) adsorption of oxygen atom on the electrode surface, (ii) diffusion of adsorbed oxygen atom along the electrode surface towards the three-phase (electrode/electrolyte/gas) boundaries, (iii) surface diffusion of adsorbed oxygen atom m ixed with the adsorption reaction of oxygen atom on the electrode surface and (iv) diffusion of oxygen vacancy through the electrode coupled with the charge transfer reaction at the electrode/gas interface. In each section for ac-impedance model, the representative impedance plots and the interpretation of important parameters attributed to the oxygen reduction reaction were explained. Finally, we discussed in detail the applications of the proposed theoretical ac-impedance models to the real electrode of SOFC system.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.20 no.4
• /
• pp.491-496
• /
• 2017

The hydrogen($H_2$) is promising energy carrier of renewable energy in the microgrid system such as small village and military base due to its high energy density, pure emission and convenient transportation. $H_2$ can be generated by photocatalytic water splitting, gasification of biomass and water electrolysis driven by solar cell or wind turbine. Solid oxide electrolysis cells(SOECs) are the most efficient way to mass production due to high operating temperature improving the electrode kinetics and reducing the electrolyte resistance. The SOECs are consist of nickel-yttria stabilized zirconia(NiO-YSZ) fuel electrode / YSZ electrolyte / lanthanum strontium manganite-YSZ(LSM-YSZ) air electrode due to similarity to Solid Oxide Fuel Cells(SOFCs). The Ni-YSZ most widely used fuel electrode shows several problems at SOEC mode such as degradation of the fuel electrode because of Ni particle's redox reaction and agglomeration. Therefore Ni-YSZ need to be replaced to an alternative fuel electrode material. In this study, We studied on the Double perovskite $PrBrMnO_{5+{\delta}}$(PBMO) due to its high electric conductivity, catalytic activity and electrochemical stability. PBMO was impregnated into the scaffold electrolyte $La_{0.8}Sr_{0.2}Ga_{0.85}Mg_{0.15}O_{3-{\delta}}$(LSGM) to be synthesized at low temperature for avoiding secondary phase generated when it exposed to high temperature. The Half cell test was conducted at SOECs and SOFCs modes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.323-326
• /
• 2003

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Journal of the Korean institute of surface engineering
• /
• v.53 no.5
• /
• pp.213-218
• /
• 2020

Composite material of the graphene ball (GB) inserted graphene oxide (GO) sheet for a supercapacitor electrode was studied. Chemical vapor deposition (CVD) process used to make GBs on the silicon oxide nanoparticles. The GBs mixed into the GO sheets to make GOGB and reduced it to create a reduced GOGB(RGOGB) composite. The RGOGB composite electrode had a large surface area and improved electrochemical properties. Specific capacitance of the RGBGO composite electrode was higher over 20 times than a pure GO and GOGB electrode in cyclic voltammetry(CV) tests, and the Z' and Z" impedance measured by an electrochemical impedance spectrometry(EIS) also low. So, the RGBGO composite electrode would use effectively to expand a performance of supercapacitor.