• 센서학회지
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• 제23권5호
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• pp.291-294
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• 2014

In this study, a chemiresistive sensor based on one-dimensional $WO_3$ nanostructures is presented for application in non-invasive medical diagnostics. $WO_3$ nanostructures were used as an active gas sensing layer and were deposited onto a $SiO_2/Si$substrate using Pt interdigitated electrodes (IDEs). The IDE spacing was $5{\mu}m$ and deposition was performed using RF sputter with glancing angle deposition mode. Pt IDEs fabricated by photolithography and dry etching. In comparison with thin film sensor, sensing performance of nanostructure sensor showed an enhanced response of more than 20 times when exposed to 50 ppm acetone at $400^{\circ}C$. Such a remarkable faster response can pave the way for a new generation of exhaled breath analyzers based on chemiresistive sensors which are less expensive, more reliable, and less complicated to be manufactured. Moreover, presented sensor technology has the potential of being used as a personalized medical diagnostics tool in the near future.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1097-1100
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• 2008

We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility ($\mu_{FE}$) and subthreshold gate swing (S) are further enhanced by fine-tuning IGZO deposition condition.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.71-74
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• 2006

In this paper, we investigated the characterization of silicon oxide(SiOx) thin film on Ethylene Terephthalate(PET) substrates by e-beam deposition for transparent barrier application. The temperature of chamber increases from $30^{\circ}C$ to $110^{\circ}C$, the roughness increase while the Water vapor transmission rate (WVTR) decreases. Under these conditions, the WVTR for PET can be reduced from a level of $0.57 g/m^2/day$ (bare subtrate) to $0.05 g/m^2/day$ after application of a 200-nm-thick $SiO_2$ coating at 110 C. A more efficient way to improve permeation of PET was carried out by using a double side coating of a 5-${\mu}m$-thick parylene film. It was found that the WVTR can be reduced to a level of $-0.2 g/m^2/day$. The double side parylene coating on PET could contribute to the lower stress of oxide film, which greatly improves the WVTR data. These results indicates that the $SiO_2$ /Parylene/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• 한국세라믹학회지
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• 제33권5호
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• Journal of Electrochemical Science and Technology
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• 제7권1호
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• pp.33-40
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• 2016

Sr_0.92Y_0.08TiO_3-δ (SYT) was investigated as an alternative anode in humidified CH₄ fuel for SOFCs at low temperatures (650 ℃-750 ℃) and compared with the conventional Ni/yttria-stabilized zirconia (Ni/YSZ) anode. The goal of the study was to directly use a hydrocarbon fuel in a SOFC without a reforming process. The cell performance of the SYT anode was relatively low compared with that of the Ni/YSZ anode because of the poor electrochemical catalytic activity of SYT. In the presence of CH₄ fuel, however, the cell performance with the SYT anode decreased by 20%, in contrast to the 58% decrease in the case of the Ni/YSZ anode. The severe degradation of cell performance observed with the Ni/YSZ anode was caused by carbon deposition that resulted from methane thermal cracking. Carbon was much less detected in the SYT anode due to the catalytic oxidation. Otherwise, a significant amount of bulk carbon was detected in the Ni/YSZ anode.

• 대한기계학회논문집B
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• 제31권5호
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• pp.473-481
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• 2007

Compared to other types of fuel cells, SOFC has advantages like a wide output range and the direct use of hydrocarbon fuel without the process of external reforming. Particularly because the direct use of fuel without reforming reaction is closely linked to overall system efficiency, it is a very attractive advantage. We tried the operation with methane. However, although methane has a small number of carbons compared to other hydrocarbon fuels, our experiment found the deposition of carbon on the surface of the SOFC electrode. To overcome the problem, we tried the operation through activating internal reforming. The reason that internal reforming was possible was that SOFC runs at high temperature compared to other fuel cells and its electrode is made of Ni, which functions as a catalyst favorable for steam reforming.

• 센서학회지
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• 제25권3호
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• pp.184-188
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• 2016

Highly ordered $SnO_2$ and NiO nanocolumns have been successfully achieved by glancing-angle deposition (GLAD) using an electron beam evaporator. Nanocolumnar $SnO_2$ and NiO sensors exhibited high performance owing to the porous nanostructural effect with the formation of a double Schottky junction and high surface-to-volume ratios. When all gas sensors were exposed to various gases such as $C_2H_5OH$, $C_6H_6$, and $CH_3COCH_3$, the response of the highly ordered $SnO_2$ nanocolumn were over 50 times higher than that of the $SnO_2$ thin film. This work will bring broad interest and create a strong impact in many different fields owing to its particularly simple and reliable fabrication process.

• 한국세라믹학회지
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• 제45권12호
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• pp.807-814
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• 2008

The Cu-Ni-YSZ cermet anodes for direct use of methane in solid oxide fuel cells have been fabricated by electroplating Cu into the porous Ni-YSZ cermet anode. The uniform distribution of Cu in the Ni-YSZ anode could be obtained via pulse electroplating in the aqueous solution mixture of $CuSO_4{\cdot}5H_{2}O$ and ${H_2}{SO_4}$ for 30 min with 0.05 A of average applied current. The power density ($0.17\;Wcm^{-2}$) of a single cell with a Cu-Ni-YSZ anode was shown to be slightly lower in methane at $700^{\circ}C$, compared with the power density ($0.28\;Wcm^{-2}$) of a single cell with a Ni-YSZ anode. However, the performance of the Ni-YSZ anode-supported single cell was abruptly degraded over 21 h because of carbon deposition, whereas the Cu-Ni-YSZ anode-supported single cell showed the enhanced durability upto 52 h.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.336.2-336.2
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• 2014

Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.