• 한국결정성장학회지
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• 제17권1호
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• pp.18-22
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• 2007

Carbon nanofilaments were deposited on silicon oxide substrate by thermal chemical vapor deposition method. We used $Fe(CO)_5$ as the catalyst for the carbon nanofilaments formation. Around $800^{\circ}C$ substrate temperature, the formation density of carbon nanofilaments could be enhanced by the vacuum sublimation technique of $Fe(CO)_5$, compared with the conventional spin coating technique. Finally, we could achieve the low temperature, as low as $350^{\circ}C$, formation of carbon nanofilaments using the sublimated Fe-complex nanograins with thermal chemical vapor deposition. Detailed morphologies and characteristics of the carbon nanofilaments were investigated. Based on these results, the role of the vacuum sublimation technique for the low temperature deposition of carbon nanofilaments was discussed.

• 한국진공학회지
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• 제12권S1호
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• pp.83-87
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• 2003

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.561-564
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• 1987

The deposition and reflow properties or BPSG film deposited by APCVD was characterized by variation of each process parameter. As deposition temperature is increased higher, deposition rate is decreased. Maximum deposition rate of BPSG film is obtained in higher 02/Hyride ratio than CVD Oxide or PSG. BPSG film shows stable dielectric properties and we obtained good planarization effect at lower reflow temperature in case of BPSG film than PSG film.

• 한국표면공학회지
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• 제18권3호
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• pp.116-124
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• 1985

Chemical vapor deposition of $SnO_2$ on Pyrex glass substrate has been investigated using $SnCl_4$ and Oxygen at relatively low temperatures(300-500$^{\circ}C$). The critical flow rate, which delineated the surface reaction controlled region from the mass transfer controlled region, was increased with deposition temperature. The apparent activation energy obtained in surface reaction controlled region was about 6Kcal/mole. The results show that deposition rate, electrical conductivity and transmittance were affected mainly by partial pressure of $SnCl_4$, but little by partial pressure f oxygen. The % transmission of 5000A-thick $SnO_2$ film was about 90% in visible spectrum region and sheet resistance was varied in 0.1-10${\Omega}$ per square shaped portion of the outer surface of the oxide.

• 한국재료학회지
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• 제14권2호
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.196-203
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• 1996

The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.113-113
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• 2011

Cobalt oxide 박막은 gas sensor, electro-chromic 소자 그리고 energy storage 소자등 광범위한 분야에서 연구되고 있으며 sputtering, CVD 그리고 electrochemical deposition 를 포함한 다양한 방법으로 증착할 수 있다. 최근에는 원자층 증착 방법을 이용한 cobalt oxide박막 증착이 연구되었는데, cyclopentadienyl계열의 전구체와 ${\beta}$-diketonate계열의 전구체를 이용하였다. 하지만 전구체의 낮은 증기압으로 인해 낮은 growth rate (약 0.02~0.05 nm/cycle)을 보였다. 본 연구에서는 증기압이 높은 전구체인 CCTBA (dicobalt hexacarbonyl tert-butylacetylene) 를 선정하여 원자층 증착 공정의 growth rate를 향상시키고자 하였다. 반응기체로는 O3을 사용하여 cobalt oxide 박막을 증착하였다. 반응기체의 주입시간 및 공정온도를 달리하여 시편을 증착한 결과 $80^{\circ}C$에서 0.1 nm/cycle로 기존의 보고된 growth rate보다 높은 수치를 얻을 수 있었다. 또한 증착된 cobalt oxide 박막내 조성분석과 I-V 측정 등을 이용하여 물리적, 전기적 특성을 규명하였다

• Transactions on Electrical and Electronic Materials
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• 제12권1호
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• 센서학회지
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• 제24권5호
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• pp.348-352
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• 2015

Thin nickel oxide films formed on uncooled and cooled $SiO_2/Si$ substrates using a radio frequency (RF) magnetron sputter powered by 200 W in a mixed atmosphere of argon and oxygen. Grazing-incidence X-ray diffraction and field emission scanning electron microscopy are used for the structural analysis of nickel oxide films. The electrical conductivity required for better bolometric performance is estimated by means of a four-point probe system. Columnar and (200) preferred orientations are discovered in both films regardless of substrate cooling. Electric resistivity, however, is greatly influenced by the substrate cooling. Oxygen partial pressure increase during the nickel oxide deposition leads to a rapid decrease in resistivity, and the resistivity is higher in the cooled nickel oxide samples. Even when small microstructure variations are applied, lower resistivity in favor of low noise performance is acquired in the uncooled samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.