1 |
M. H. White, D. A. Adams, and J. Bu, IEEE Circuits and Devices Mag. 16, 22 (2000) [DOI: 10.1109/101.857747].
DOI
|
2 |
M. Boutchich, D. S. Golubovic , N. Akil , and M. van Duuren, Microelectron. Eng. 87, 41 (2010) [DOI: 10.1016/ j.mee.2009.05.019].
DOI
ScienceOn
|
3 |
M. P. M. Jank, M. Lemberger, A. J. Bauer, L. Frey, and H. Ryssel, Microelectron. Reliab. 41, 987 (2001) [DOI: 10.1016/s0026-2714(01)00053-1].
DOI
|
4 |
S. Kumar and E. L. Russell, IEEE International Integrated Reliability Workshop Final Report (Lake Tahoe, CA 2001) p. 34-40.
|
5 |
K. Mameno, H. Nagasawa, A. Nishida, and H. Fujiwara, Nucl Instrum Meth Phys Res B 121, 311 (1997).
DOI
ScienceOn
|
6 |
P. Chakraborty, S. S. Mahato, T. K. Maiti, M. K. Bera, C. Mahata, S. K. Samanta, A. Biswas, and C. K. Maiti, Microelectron. Eng. 86, 299 (2009) [DOI: 10.1016/j.mee.2008.10.008].
DOI
ScienceOn
|
7 |
S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, 2nd ed. (Lattice Press, Sunset Beach, 2002).
|
8 |
J. H. Han, J. H. Kim, S. H. Lee, and C. Kim, Solid-State Electron. 49, 1857 (2005) [DOI: 10.1016/j.sse.2005.10.006].
DOI
ScienceOn
|