• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.225-230
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• 2016

The present work was conducted to investigate the effects of NaF concentration in phosphate and silicate-containing alkaline electrolyte on the morphology, thickness, surface roughness and hardness of anodic oxide films formed on AZ31 Mg alloy by plasma electrolytic oxidation (PEO) method. The PEO films showed flat surface morphology with pores in the absence of NaF in the electrolyte, but nodular features appeared on the PEO film surface prepared in NaF-containing electrolyte. Numerous pores ranging from 1 to $20{\mu}m$ in size were observed in the PEO films and the size of pores decreased with increasing NaF concentration in the electrolyte. Surface roughness and thickness of PEO films showed increases with increasing NaF concentration. Hardness of the PEO films also increased with increasing NaF concentration. It was noticed that hardness of inner part of the PEO films is lower than that of outer part of them, irrespective of the concentration of NaF. The low hardness of PEO films was explained by the presence of a number of small size pores less than $2{\mu}m$ near the PEO film/substrate interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.120-122
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using thin film aluminum deposited on silicon wafer was fabricated. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2M was used for low voltage anodization under 100V, the chromic acid with 0.1M was used for high voltage anodization over 100V. The nano-sized pores with diameter of 60~120nm was obtained by low voltage anodization of 40~90V and those of 200~300nm was obtained by high voltage anodization of 120~160V. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano-structure.

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.284-293
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• 2019

Herein, we report an electrode surface with a hierarchical assembly of wild-type M13 virus nanofibers (M13) to nucleate the AuPt alloy nanostructures by electrodeposition. M13 was pulled on the electrode surface to produce a virus film, and then a layer of sol-gel matrix (SSG) was wrapped over the surface to protect the film, thereby a bio-template was constructed. Blending of metal binding domains of M13 and amine groups of the SSG of the bio-template were effectively nucleate and directed the growth of nanostructures (NSs) such as Au, Pt and AuPt alloy onto the modified electrode surface by electrodeposition. An electrocatalytic activity of the modified electrode toward methanol oxidation in alkaline medium was investigated and found an enhanced mass activity ($534mA/mg_{Pt}$) relative to its controlled experiments. This bio-templated growth of NSs with precise composition could expedite the intention of new alloy materials with tuneable properties and will have efficacy in green energy, catalytic, and energy storage applications.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.79-85
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• 1997

Fe$_2$O$_3$ thin films were prepared on $Al_2$O$_3$ substrate by PECVD(Plasma-Enhanced Chemical Vapor Deposition) process. The phase transformation of iron oxide film was determined as the substrate temperature and reduction-oxidation process. $\alpha$-Fe$_2$O$_3$ was stable in deposition temperature ranges of 80~15$0^{\circ}C$. Fe$_3$O$_4$ phase was obtained by the reduction process of $\alpha$-Fe$_2$O$_3$ phase in H$_2$ ambient. Fe$_3$O$_4$ phase was transformed into a ${\gamma}$-Fe$_2$O$_3$ thin film under controlled oxidation conditions at 280~30$0^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1122-1125
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• 2006

The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.165-166
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• 1994

The depth profiles of the as-grown and the annealed NH$_3$ oxide film in NH$_3$(7.5%)/$N_2$ ambient at 45$0^{\circ}C$ are analized . This annealing in the ambient of mixed gases removes the small quantities of N component from the NH$_3$ oxide film. In AES analysis, the NH$_3$ oxidation shows the exact stoichiometry of SiO$_2$ and a sharp slop at SiO$_2$/Si interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.35-38
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.611-614
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• 2003

The electrochemical oxidation of ascorbic acid(AA), serotonin(SE) and epinephrine(EP) have been performed at poly N,N-dimethylaniline(PDMA) film coated diamond electrode. This cationic polymer film is electrochemically deposited on boron-doped diamond electrode surface. Unlike the bard electrode, the polymer film-coated diamond electrode can well separate the oxidation potential of AA by 200mV. Thus this electrode can be successfully used for the simultaneoud detection of both species. Increases in the concentration of AA do not affect the reponse of EP and SE.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.235-238
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• 1999

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.