Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.04a
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- Pages.35-38
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- 2004
Evaluation of Oxidation Ozone for Superconductor Thin Film Growth
초전도 박막 제작을 위한 산화 오존의 평가
- Lim, Jung-Kwan (Dongshin Uni.) ;
- Park, Yong-Pil (Dongshin Uni.) ;
- Lee, Hee-Kab (KCCI)
- Published : 2004.04.30
Abstract
Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at