• Journal of the Korean Ceramic Society
• /
• v.34 no.5
• /
• pp.512-518
• /
• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• Korean Journal of Materials Research
• /
• v.14 no.3
• /
• pp.163-167
• /
• 2004

TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of $Ti_{0.66}$ $Al_{0.32}$ $La_{ 0.02}$N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense $\alpha$ $-Al_2$$O_3$ film in oxide film, leading to the abrupt reduction of oxidation rate.

• Clean Technology
• /
• v.27 no.3
• /
• pp.217-222
• /
• 2021

Although monolayer black phosphorus (BP) and few-layer BP nanosheets (NSs) have been extensively studied as promising alternatives to graphene, research has focused primarily on atomically thin-layered BP in an isolated form. In order to realize the practical applications of BP-related devices, a BP film based on continuous networking of few-layer BP NSs should be developed. In this study, a transparent BP film with high quality was fabricated via a vacuum filtration method. An oxygen-free water solvent was used as an exfoliation medium to avoid significant oxidation of the few-layer BP NSs in liquid-phase exfoliation. The exfoliation efficiency from bulk BP to the few-layer BP NSs was estimated at 22%, which is highly efficient for the production of continuous BP film. The characteristics of the high-quality BP film were determined as 98% transparency, minimum oxidation of 18%, structural stability, and an appropriate bandgap of about 1.8 eV as a semiconductor layer. In order to demonstrate the potential of the BP film for photocatalytic activity, we performed photoelectrochemical water oxidation of the transparent BP film. Although its performance should be improved for practical applications, the BP film could function as a photoanode, which offers a new potential semiconductor in water oxidation. We believe that if the BP film is adequately engineered with other catalysts the photocatalytic activity of the BP film will be improved.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.73-73
• /
• 2007

Amorphous BON and Si-DLC thin films were synthesized by the RF plasma enhanced CVD method, and their oxidation behavior was studied up to $500^{\circ}C$ in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or $CO_2$from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.

• Journal of the Korean Ceramic Society
• /
• v.37 no.1
• /
• pp.96-101
• /
• 2000

Comparative studies on microstructure, and mechanical and anti-oxidation properties between TiN and Ti-Si-N films were performed. The Ti-Si-N films were deposited on high-speed steel and silicon wafer substrates by plasma-assisted chemcial vapor deposition(PACVD) technique. The Si addition to TiN film caused to change the microstructure such as grain size refinement, randomly multi-oriented microstructure, and nano-sized codeposition of silicon nitride in the TiN matrix. The Ti-Si-N film, contains Si content of ∼7 at.%, showed the micro-hardness value of ∼3400 HK, which was higher than the pure TiN film whose hardness was ∼1500HK. The Ti-Si(7 at.%)-N film also showed much improved anti-oxidation properties compared with those of the pure TiN film. These properties were also related to the microstructure of Ti-Si(7 at.%)-N film was formed and retarded further oxidation of the nitridelayer. These properties were also related to the microstructure of Ti-Si(7 at.%)-N film which was characterized by nano-sized precipitates of silicon nitride phase in the TiN matrix and randomly oriented grains.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.9
• /
• pp.20-28
• /
• 1992

Dielectric thin film of N/O ($Si_{3]N_{4}/SiO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(dry & pyrogenic oxidation methods) of the top 7nm $Si_{3]N_{4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high resolution TEM, AES and SIMS. The insulating characteristics(I-V characteristics) were investigated by HP 4145, and the characteristics of TDDB (Time Dependent Dielectric Breakdown) were evaluated by using CCST(Current Constant Stress Time) method. In this experiment, The optimum oxidation condition for preparation of good insulating and TDDB characteristics of N/O film was pyrogenic oxidation at 85$0^{\circ}C$ for 30 minutes. The leakage current was reduced from 400pA to 7.5pA when SiO$_{2}$ film with thickness of 2nm was formed on the top of $Si_{3]N_{4}$ film by the pyrogenic oxidation method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.5
• /
• pp.341-344
• /
• 2018

In order to achieve a high efficiency for the silicon solar cell, a passivation characteristic that minimizes the electrical loss at a silicon interface is required. In this paper, we evaluated the applicability of the oxide film formed by ozone for the tunnel silicon oxide film. To this end, we fabricated the silicon oxide film by changing the condition of ozone oxidation and compared the characteristics with the oxide film formed by the existing nitric acid solution. The ozone oxidation was formed in the temperature range of $300{\sim}500^{\circ}C$ at an ozone concentration of 17.5 wt%, and the passivation characteristics were compared. Compared to the silicon oxide film formed by nitric acid oxidation, implied open circuit voltage (iVoc) was improved by ~20 mV in the ozone oxidation and the ozone oxidation after the nitric acid pretreatment was improved by ~30 mV.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.1
• /
• pp.7-12
• /
• 2014

The characteristics of oxidation for the Zry-4 was measured in the $800^{\circ}C$ and high steam pressure (50 bar, 75 bar, 100 bar) conditions, using an apparatus for high pressure steam oxidation. The effect of accelerated oxidation by high-pressure steam was increased more than 60% in hydrogen-charged cladding than normal cladding. This difference between hydrogen charged claddings and normal claddings tends to be larger as the higher pressure. The accelerated oxidation effect of hydrogen charging cladding is regarded as the hydrogen on the metal layer affects the formation of the protective oxide layer. The creation of the sound monoclinic phase in Zry-4 oxidation influences reinforcement of corrosion-resistance of the oxide layer. The oxidation is estimated to be accelerated due to the creation of equiaxial type oxide film with lower corrosion resistance than that of columnar type oxide film. When tetragonal oxide film transformed into the monoclinic oxide film, surface energy of the new monoclinic phase reduced by hydrogen in the metal layer.

• Korean Journal of Materials Research
• /
• v.12 no.9
• /
• pp.718-723
• /
• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• Korean Journal of Materials Research
• /
• v.12 no.8
• /
• pp.676-681
• /
• 2002

Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.