• Title/Summary/Keyword: Overlapped length

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Overlapped Electromagnetic Coilgun for Low Speed Projectiles

  • Mohamed, Hany M.;Abdalla, Mahmoud A.;Mitkees, Abdelazez;Sabery, Waheed
    • Journal of Magnetics
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    • v.20 no.3
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    • pp.322-329
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    • 2015
  • This paper presents a new overlapped coilgun configuration to launch medium weight projectiles. The proposed configuration consists of a two-stage coilgun with overlapped coil covers with spacing between them. The theoretical operation of a multi-stage coilgun is introduced, and a transient simulation was conducted for projectile motion through the launcher by using a commercial transient finite element software, ANSOFT MAXWELL. The excitation circuit design for each coilgun is reported, and the results indicate that the overlapped configuration increased the exit velocity relative to a non-overlapped configuration. Different configurations in terms of the optimum length and switching time were attempted for the proposed structure, and all of these cases exhibited an increase in the exit velocity. The exit velocity tends to increase by 27.2% relative to that of a non-overlapped coilgun of the same length.

Source-Overlapped Gate Length Effects at Tunneling current of Tunnel Field-Effect Transistor (소스영역으로 오버랩된 게이트 길이 변화에 따른 터널 트랜지스터의 터널링 전류에 대한 연구)

  • Lee, Ju-Chan;Ahn, Tae-Jun;Sim, Un-Sung;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2016.10a
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    • pp.611-613
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    • 2016
  • The characteristics of tunnel field-effect transistor(TFET) structure with source-overlapped gate was investigated using a TCAD simulations. Tunneling is mostly divided into line-tunneling and point-tunneling, and line-tunneling is higher performance than point-tunneling in terms of subthreshold swing(SS) and on-current. In this paper, from the simulation results of source-overlapped gate length effects at silicon(Si), germanium(Ge), Si-Ge hetero TFET structure, the guideline of optimal structure with highest performance are proposed.

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Ecological Niche Overlap and Competition between Quercus mongolica and Quercus dentata Under Soil Water Gradient

  • Yeon-ok, Seo;Se-Hee, Kim;Eui-Joo, Kim;Yoon-Seo, Kim;Kyeong-Mi, Cho;Jae-Hoon, Park;Ji-Won, Park;JungMin, Lee;Jin Hee, Park;Byoung-Ki, Choi;Young-Han, You
    • Journal of Forest and Environmental Science
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    • v.38 no.4
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    • pp.229-238
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    • 2022
  • Q. mongolica and Q. dentata are representative species of deciduous forest communities in Korea and are known to be relatively resistant to soil drying condition among Korean oaks. This study attempted to elucidate the degree of competition and ecological niche characteristics of the two species by comparing the ecological responses of the two species according to soil moisture. Competition between Q. mongolica and Q. dentata was shown to be more intense under the conditions where moisture content was low than under the conditions where moisture content was high. As for the ecological niche overlaps of the two species for soil moisture, the structural traits of plant such as stem diameter overlapped the most, the traits of biomass such as petiole weight overlapped the least, and photosynthetic organ-related traits such as leaf width and length overlapped intermediately. When looking at the competition for soil moisture between the two species, it can be seen that Q. mongolica won in nine traits (leaf width length, leaf lamina length, leaf lamina weight, leaf petiole weight, leaf area, leaves weight, shoot weight, root weight, and plant weight) and Q. dentata won in the remaining seven traits (leaf petiole length, leaves number, stem length, stem diameter, stem weight, shoot length, and root length). Competition between the two species for the moisture environment of the soil was shown to be intense under the conditions where moisture content was low. The degree of competition between Q. dentata and Q. mongolica for soil moisture is high under the conditions where soil moisture content is low, and it is judged that Q. mongolica is more competitive for soil moisture than Q. dentata.

A Study on Extru-Shear Welding(ESW) Process of Aluminum Plates (알루미늄 판재의 압출전단접합에 관한 연구)

  • Lee, K.K.;Lee, M.Y.;Jin, I.T.
    • Transactions of Materials Processing
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    • v.19 no.8
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    • pp.452-459
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    • 2010
  • It was investigated that two plates of aluminum can be welded by hot extru-shear welding process with extru-shear welding dies, and that the welding strength and metal flow on the welding section were analyzed by computer simulation according to the welding variables such as inclined angle of cutter and overlapped length of plates and temperature of plates. It was known by computer simulation that welding strength on the welding section of plates could be influenced by the inclined angle of cutter and overlapped length of plates and temperature of plates. And it was known by experiments that two plates of aluminum can be welded on the end sections by hot extru-shear welding process using extru-shear welding dies, and that welding strength is the highest when inclined angle of dies is $70^{\circ}$, and overlapped length is 1.2 mm, and temperature is $520^{\circ}$, when aluminum 5052 two plates with 1.6 mm thickness are used as welding material.

A Study of Optimal Mesh Interface Region Generation to Improve Spatial and Temporal Accuracy (공간 및 시간 정확도 향상을 위한 최적의 삽간영역 구성에 관한 연구)

  • Cho Kum Won
    • Journal of computational fluids engineering
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    • v.8 no.3
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    • pp.41-49
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    • 2003
  • The spatial accuracy becomes first-order when second-order conservation schemes including the non-conservative interpolation in general Chimera method are used. To ensure the solution accuracy, the discontinuities must be located away from the overlapped regions, and the length of overlapped region also must be proportional to the grid spacing. In this paper, a proposed method, cut-paste algorithm, is used to satisfy above constraints. The cut-paste algorithm can generate the optimal mesh inteface region automatically, To validate the spatial and temporal accuracy due to the non-conservative interpolation, inviscid and viscous problems are tested.

Degradation Characteristics by Hot Carrier Injection of nchannel MOSFET with Gate- $n^{-}$S/D Overlapped Structure (게이트와 $n^{-}$소스/드레인 중첩구조를 갖는 n 채널 MOSFET의 핫캐리어 주입에의한 소화특성)

  • 이대우;이우일
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.2
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    • pp.36-45
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    • 1993
  • The n-channel MOSFETs with gate-$n^{-}$S/D overlapped structure have been fabricated by ITLDD(inverse-T gate lightly doped drain) technology. The gate length(L$_{mask}$) was 0.8$\mu$m. The degradation effects of hot carriers injected into the gate oxide were analyzed in terms of threshold voltage, transconductance and drain current variations. The degradation dependences on the gate voltage and drain voltage were characterized. The devices with higher n-concentration showed higher resistivity against the hot carrier injection. As the results of investigating the lifetime of the device, the lifetime showed longer than 10 years at V$_{d}$ = 5V for the overlapped devices with the implantation of an phosphorus dose of 5$\times$10$^{13}$ cm$^{-2}$ and an energy of 80 keV in the n$^{-}$resion.

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Study of Spatial and Temporal Accuracy Estimation Related with Mesh Interafce Region on Overlapped Grids (중첩격자계에서 교차영역 구성에 따른 시간/공간 정확도에 관한 연구)

  • Cho K. W.;Kwon J. H.;Lee S.
    • 한국전산유체공학회:학술대회논문집
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    • 1999.11a
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    • pp.95-107
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    • 1999
  • The spatial error due to the non-conservative interpolation become first-order when second-order conservative schemes are used, discontinuities are located away from the overlapped regions, and if the length of the overlapped region is not proportional to the grid spacing. Therefore, the solution accuracy is ensured if two domains overlap each other with a fixed grid point and the interpolation is occurred in smooth flow regions. To validate the spatial and temporal accuracy due to the non-conservative interpolation, inviscid and viscous problems are tested.

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An Efficient Overlapped LDPC Decoder with a Upper Dual-diagonal Structure

  • Byun, Yong Ki;Park, Jong Kang;Kwon, Soongyu;Kim, Jong Tae
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.1
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    • pp.8-14
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    • 2013
  • A low density parity check (LDPC) decoder provides a most powerful error control capability for mobile communication devices and storage systems, due to its performance being close to Shannon's limit. In this paper, we introduce an efficient overlapped LDPC decoding algorithm using a upper dual-diagonal parity check matrix structure. By means of this algorithm, the LDPC decoder can concurrently execute parts of the check node update and variable node update in the sum-product algorithm. In this way, we can reduce the number of clock cycles per iteration as well as reduce the total latency. The proposed decoding structure offers a very simple control and is very flexible in terms of the variable bit length and variable code rate. The experiment results show that the proposed decoder can complete the decoding of codewords within 70% of the number of clock cycles required for a conventional non-overlapped decoder. The proposed design also reduces the power consumption by 33% when compared to the non-overlapped design.

Non-Overlapped Single/Double Gate SOI/GOI MOSFET for Enhanced Short Channel Immunity

  • Sharma, Sudhansh;Kumar, Pawan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.3
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    • pp.136-147
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    • 2009
  • In this paper we analyze the influence of source/drain (S/D) extension region design for minimizing short channel effects (SCEs) in 25 nm gate length single and double gate Silicon-on-Insulator (SOI) and Germanium-on-Insulator (GOI) MOSFETs. A design methodology, by evaluatingm the ratio of the effective channel length to the natural length for the different devices (single or double gate FETs) and technology (SOI or GOI), is proposed to minimize short channel effects (SCEs). The optimization of non-overlapped gate-source/drain i.e. underlap channel architecture is extremely useful to limit the degradation in SCEs caused by the high permittivity channel materials like Germanium as compared to that exhibited in Silicon based devices. Subthreshold slope and Drain Induced Barrier Lowering results show that steeper S/D gradients along with wider spacer regions are needed to suppress SCEs in GOI single/double gate devices as compared to Silicon based MOSFETs. A design criterion is developed to evaluate the minimum spacer width associated with underlap channel design to limit SCEs in SOI/GOI MOSFETs.

Comparative Analysis on Performance Indices of Obstacle Detection for an Overlapped Ultrasonic Sensor Ring (중첩 초음파 센서 링의 장애물 탐지 성능 지표 비교 분석)

  • Kim, Sung-Bok;Kim, Hyun-Bin
    • Journal of Institute of Control, Robotics and Systems
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    • v.18 no.4
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    • pp.321-327
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    • 2012
  • This paper presents a comparative analysis on three different types of performance indices of obstacle detection for an overlapped ultrasonic sensor ring. Due to beam overlap, the entire sensing zone of each ultrasonic sensor can be divided into three smaller sensing subzones, which leads to significant reduction of positional uncertainty in obstacle detection. First, the positional uncertainty in obstacle detection is expressed in terms of the area of a sensing subzone, and type 1 performance index is then defined as the area ratio of side and center sensing subzones. Second, based on the area of a sensing subzone, type 2 performance index is defined taking into account the size of the entire range of obstacle detection as well as the degree of the positional uncertainty in obstacle detection. Third, the positional uncertainty in obstacle detection is now expressed in terms of the length of the uncertainty arc spanning a sensing subzone, and type 3 performance index is then defined as the average value of the uncertainty arc lengths over the entire range of obstacle detection. Fourth, using a commercial low directivity ultrasonic sensor, the changes of three different performance indices depending on the parameter of an overlapped ultrasonic sensor ring are examined and compared.