• 대한의용생체공학회:의공학회지
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• 제32권3호
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• pp.264-269
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• 2011

To increase therapeutic efficiency and biological safety, it is important to precision control of acoustic output for therapeutic ultrasound equipment. In this paper, the electro-acoustic radiation conductance, one of electroacoustic characteristics of therapeutic ultrasound equipment, was measured by the radiation force balance method according to IEC 61161 standards and the acoustic output was estimated using the electro-acoustic radiation conductance. The estimation of acoustic output was conducted to continuous wave mode and pulse wave mode of duty cycle between 20% and 80%. The differences between prediction values and measurement results are within 5% of measurement uncertainty, which is a reasonably good agreement. The results show that acoustic output controlled by electro-acoustic radiation conductance was found to be an effective method.

• 센서학회지
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• 제29권5호
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• 한국지능시스템학회:학술대회논문집
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• 한국퍼지및지능시스템학회 2001년도 춘계학술대회 학술발표 논문집
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• pp.87-91
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• 2001

This paper discusses the influence of input conductance on the convergece of the continuous Hopfield neural networks. The convergence has been analyzed for the input and output nodes of neurons. Also, the characteristics of equilibrium points has been analyzed depending on different values of the input conductance.

• 한국지능시스템학회논문지
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• 제11권4호
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• pp.325-330
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• 2001

최적화문제에 사용되는 신경회로망을 회로레벨에서 시뮬레이션을 해보면, 알고리즘레벨에서 시뮬레이션한 결과와 많이 다름을 체험한다. 즉, 이런 신경회로망의 출력값들은 시간이 흐름에 따라 점근적으로 수렴하나, 입력단의 값들은 입력단에 부수적으로 연결되어 있는 컨덕턴스의 값에 따라 수렴여부도 달라지고, 또한 시스템의 성능도 변함을 안다. 이 논문에서는 입력단에 시스템의 안정도를 위해 부수적으로 연결된 컨덕턴스의 값에 따라 시스템의 수렴여부를 입력단과 출력단에서 분석하였으며, 에너지함수의 수렴점들이 이들 컨덕턴스의 값에 따라 성분이 변함을 분석하였다.

• 한국컴퓨터산업학회논문지
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• 제6권5호
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• pp.783-790
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• 2005

In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.233-236
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• 2000

Polycrystalline Silicon Thin Film Transistors(Poly-Si TFT's), fabricated at temperature lower than $600^{\circ}C$ are now largely used in many applications, particularly in large area electrons. In this work, electrical stress effects on Poly-Si TFT's fabricated by Solid Phase Crystal(SPC) was investigated by measuring electric properities such as transfer and output characteristics, and channel conductance. Consequently, It is turned out that it should be noted the output characteristics, drain current and channel conductance, strongly degrade around origin.

• 대한기계학회논문집
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• 제10권6호
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• pp.814-822
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• 1986

본 연구에서는 이러한 점에 착안하여 비가열수직이상유동계에서 전도Probe 를 이용하여 시간평균보이드율을 측정하여 이들로부터 통계적으로 처리된 확률밀도함 수(PDF)분포와 이와 관련된 일련의 모우멘트계산을 시도 하므로써 유동양식과 천이특 성에 대하여 객관적이고 체계적인 해석을 하였다. 또한 학계 및 산업계에서는 측정 기구의 단순화가 요구되므로 전도Probe의 출력신호를 분석하여 유동양식에 따르는 특 성을 아울러 구명하였다.

• 대한전기학회논문지:시스템및제어부문D
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• 제49권11호
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• pp.617-624
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• 2000

The negative weight can be ofter seen in Hopfield neural network, which is difficult to implement negative conductance in circuits. Usually, the inverted output of amplifier is used to avoid negative resistors for expressing the negative weights in hardware implementation. However, there is some difference between using negative resistor and the inverted output of amplifier for representing the negative weight. This difference is discussed in this paper.

• 전력전자학회논문지
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• 제13권2호
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• pp.119-127
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• 2008

본 논문에서는 모듈형 계통연계 태양광 PCS (photovoltaic power conditioning system)를 제안하였다. 능동-클램프 회로와 듀얼 직렬-공진 정류 회로를 이용하여 높은 입출력 전압 비를 효과적으로 구현하고 효율을 높인 승압형 DC-DC 컨버터를 제안하였다. 최대 전력점 추종 특성을 개선한 IncCond (incremental conductance) 방식의 MPPT (maximum power point tracking) 알고리즘을 사용하였다. 이 때 DC 전류 센서를 사용하지 않고 태양전지 모듈 (PV module)의 전류를 예측한다. 선형화 기법을 사용한 출력 전류 제어기로 인버터를 제어하여 단위 역률을 실현하였다. 모든 알고리즘과 제어기를 하나의 마이크로컨트롤러로 구현하고 제안된 DC-DC 컨버터와 제어기의 우수성을 실험을 통해 검증하였다.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.423-430
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• 2005

In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating $n^{+}$ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating $n^{+}$ zones, the transistor channel region is split into four zones with different lengths defined by a floating $n^{+}$ region. This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA while that of the conventional dual-gate structure is 0.5 mA at a 12 V drain voltage and a 7 V gate voltage. This results show a $80 {\%}$ enhancement in on-current by adding two floating $n^{+}$ zones. Moreover we observed the reduction of electric field In the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.