• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.115-122
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• 2016

In this paper, wideband Ku-band downconverter was designed to receiver digital satellite broadcasting. The low-nose downconverter was designed to form four local oscillator frequencies(9.75, 10, 10.75 and 11.3 GHz) representing a low phase noise due to VCO-PLL with respect to input signals of 10.7 to 12.75 GHz and 3-stage low noise amplifier circuit by broadband noise matching, and to select intermediate frequency bands by digital control. The developed low-noise downconverter exhibited the full conversion gain of 64 dB, and the noise figure of low-noise amplifier was 0.7 dB, the P1dB of output signal 15 dBm, and the phase noise -85 dBc@10kHz at the band 1 carrier frequency of 9.75 GHz. The low noise block downconverter(LNB) for wideband digital satellite broadcasting designed in this paper can be used for global satellite broadcasting LNB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1239-1247
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• 2012

In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.415-422
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• 2004

DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this paper, a 5.8 GHz down-conversion mixer for DSRC communication system was designed and fabricated using 0.8 ${\mu}{\textrm}{m}$ SiGe HBT process technology and RF/LO matching circuits, RF/LO input balun circuits, and If output balun circuit were all integrated on chip. The chip size of fabricated mixer was 1.9 mm${\times}$1.3 mm and the measured performance was 7.5 ㏈ conversion gain, －2.5 ㏈m input IP3, 46 ㏈ LO to RF isolation, 56 ㏈ LO to IF isolation, current consumption of 21 mA for 3.0 V supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.100-108
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• 2014

Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, important performance metrics such as voltage gain, return loss, noise figure and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high impedance-matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that input impedance can be described in the form of second-order frequency response, where poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor located between the gate and the drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this wideband LNA is $0.202mm^2$, including pads. Measurement results illustrate that the input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 6-8 dB over 1.5 - 13 GHz. In addition, good linearity (IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.8
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• pp.35-40
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• 2008

This paper proposes a dual-band balun which is based on Wilkinson power divider. By inserting $\lambda/2$ transmission line between port 2 and 3, this balun shows good matching at all ports and improved isolation. We use matamaterial(CRLH, D-CRLH) structure for a miniaturization of the circuit implementation and dual-band operation at TDMB frequency range(195MHz) and DVB-H frequency range(670MHz). The proposed balun is designed with return loss larger than -12.98dB at all port, and isolation larger than -12.4dB, the amplitude imbalance between output signals less than 0.08dB, also phase differences of outputs less than $2.8^{\circ}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1105-1111
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• 2006

In this paper, using low-temperature co-fired ceramic(LTCC) based system-in-package(SiP) technology, a very compact power amplifier LTCC module was designed, fabricated, and then characterized for 60 GHz wireless transmitter applications. In order to reduce the interconnection loss between a LTCC board and power amplifier monolithic microwave integrated circuits(MMIC), bond-wire transitions were optimized and high-isolated module structure was proposed to integrate the power amplifier MMIC into LTCC board. In the case of wire-bonding transition, a matching circuit was designed on the LTCC substrate and interconnection space between wires was optimized in terms of their angle. In addition, the wire-bonding structure of coplanar waveguide type was used to reduce radiation of EM-fields due to interconnection discontinuity. For high-isolated module structure, DC bias lines were fully embedded into the LTCC substrate and shielded with vias. Using 5-layer LTCC dielectrics, the power amplifier LTCC module was fabricated and its size is $4.6{\times}4.9{\times}0.5mm^3$. The fabricated module shows the gain of 10 dB and the output power of 11 dBm at P1dB compression point from 60 to 65 GHz.

• Journal of the Korean Solar Energy Society
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• v.28 no.2
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• pp.64-69
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• 2008

As the grid-connected photovoltaic power conditioning systems (PVPCS) are installed in many residential areas, these have raised potential problems of network protection on electrical power system. One of the numerous problems is an Islanding phenomenon. There has been an argument that it may be a non-issue in practice because the probability of islanding is extremely low. However, there are three counter-arguments: First, the low probability of islanding is based on the assumption of 100% power matching between the PVPCS and the islanded local loads. In fact, an islanding can be easily formed even without 100% power matching (the power mismatch could be up to 30% if only traditional protections are used, e.g. under/over voltage/frequency). The 30% power-mismatch condition will drastically increase the islanding probability. Second, even with a larger power mismatch, the time for voltage or frequency to deviate sufficiently to cause a trip, plus the time required to execute a trip (particularly if conventional switchgear is required to operate), can easily be greater than the typical re-close time on the distribution circuit. Third, the low-probability argument is based on the study of PVPCS. Especially, if the output power of PVPCS equals to power consumption of local loads, it is very difficult for the PVPCS to sustain the voltage and frequency in an islanding. Unintentional islanding of PVPCS may result in power-quality issues, interference to grid-protection devices, equipment damage, and even personnel safety hazards. Therefore the verification of anti-islanding performance is strongly needed. In this paper, improved RPV method is proposed through considering power quality and anti-islanding capacity of grid-connected single-phase PVPCS in IEEE Std 1547 ("Standard for Interconnecting Distributed Resources to Electric Power Systems"). And the simulation results are verified.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.844-853
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• 2008

This paper describes the design of a FEM(Front End Module) having power detection function for mobile handset application. The designed FEM consists of a MMIC(Monolithic Microwave Integrated Circuits) power amplifier chip, SAW Tx filter and duplexer, diode power detector and stripline matching circuit. An LTCC(Low Temperature Co-fired Ceramics) technology is adopted for miniaturized FEM. The frequency band is $824{\sim}869$ MHz which is the uplink Tx band of the CDMA mobile system. The size of designed FEM is $7.0{\times}5.5{\times}1.5\;mm^3$, which is an ultra-small size even though the power detector circuit is included. All sub-components of FEM have been developed and measured in advance before being integrated into FEM. The measured output power and gain are 27 dBm and 27 dB, respectively. In addition, the measured ACPR characteristics are 46.59 dBc and 55.5 dBc at 885 kHz and 1.98 MHz offset, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1064-1073
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• 2013

In this paper, a compact 370 W high efficiency GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) power amplifier(PA) using internal harmonic manipulation circuits is presented for cellular and L-band. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequency. In order to minimize package size, new 41.8 mm GaN HEMT and two MOS(Metal Oxide Semiconductor) capacitors are internally matched and combined package size $10.16{\times}10.16{\times}1.5Tmm^3$ through package material changes and wire bonded in a new package to improve thermal resistance. When drain biased at 48 V, the developed GaN HEMT power amplifier has achieved over 80 % Drain Efficiency(DE) from 770~870 MHz and 75 % DE at 1,805~1,880 MHz with 370 W peak output power(Psat.). This is the state-of-the-art efficiency and output power of GaN HEMT power amplifier at cellular and L-band to the best of our knowledge.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1034-1046
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• 2011

In this paper, a design and fabrication of 40 W power amplifier for the X-band using load-pull measurement of GaN HEMT chip are presented. The adopted active device for power amplifier is GaN HEMT chip of TriQuint company, which is recently released. Pre-matched fixtures are designed in test jig, because the impedance range of load-pull tuner is limited at measuring frequency. Essentially required 2-port S-parameters of the fixtures for extraction optimal input and output impedances is obtained by the presented newly method. The method is verified in comparison of the extracted optimal impedances with data sheet. The impedance matching circuit for power amplifier is designed based on EM co-simulation using the optimal impedances. The fabricated power amplifier with 15${\times}$17.8 $mm^2$ shows the efficiency above 35 %, the power gain of 8.7~8.3 dB and the output power of 46.7~46.3 dBm at 9~9.5 GHz with pulsed-driving width of 10 usec and duty of 10 %.