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http://dx.doi.org/10.5515/KJKIEES.2012.23.11.1239

Design and Fabrication of X-Band GaN HEMT SSPA for Marin Radar System  

Heo, John (LIGNex1 ISR R&D Lab.)
Jin, Hyeong-Seok (LIGNex1 ISR R&D Lab.)
Jang, Ho-Ki (U-tel Research and Development Center)
Kim, Bo-Kyun (U-tel Research and Development Center)
Cho, Sookhee (STX Engine Electronics & Telecommunications Research Center)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.23, no.11, 2012 , pp. 1239-1247 More about this Journal
Abstract
In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.
Keywords
GaN; SSPA; MTBF; Duty Cycle; MTI;
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Times Cited By KSCI : 2  (Citation Analysis)
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