• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.10
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• pp.109-117
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• 2004

In this paper, a K-band local oscillator composed of a VCDRO(Voltage Controlled Dielectric Resonator Oscillator), GaAs MESFET, and Reflector type frequency doubler has been designed and fabricated. TO obtain a good phase noise performance of a VCDRO, a active device was selected with a low noise figure and a low flicker noise MESFET and a dielectric resonator was used for selecting stable and high oscillation frequency. Especially, to have a higher conversion gain than a conventional doubler as well as a good harmonic suppression performance with circuit size reduced a doubler structure was employed as the Reflector type composed of a reflector and a open stub of quarter wave length for rejecting the unwanted harmonics. The measured results of fabricated oscillator show that the output power was 5.8 dBm at center frequency 12.05 GHz and harmonic suppression -37.98 dBc, Phase noise -114 dBc at 100 KHz offset frequency, respectively, and measured results show of fabricated frequency doubler, the output power at 5.8 dBm of input power is 1.755 dBm conversion gain 1.482 dB, harmonic suppression -33.09 dBc, phase noise -98.23 dBc at 100 KHz offset frequency, respectively. This oscillator could be available to a local oscillator in K-band which used frequency doubler techniques.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.1-6
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• 2007

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.10 s.352
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• pp.90-97
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• 2006

We report our research work on the millimeter-wave broadband amplifier integrating the shunt peaking technology with the cascode configuration. The millimeter-wave broadband cascode amplifier on MIMIC technology was designed and fabricated using $0.1{\mu}m\;{\Gamma}-gate$ GaAs PHEMT, CPW, and passive library. The fabricated PHEMT has shown a transconductance of 346.3 mS/mm, a current gain cut off frequency ($f_T$) of 113 GHz, and a maximum oscillation frequency ($f_{max}$) of 180 GHz. To prevent oscillation of designed cascode amplifier, a parallel resistor and capacitor were connected to drain of common-gate device. For expansion of the bandwidth and flatness of the gain, we inserted the short stub into bias circuits and the compensation transmission line between common-source device and common-gate device, and then their lengths were optimized. Also, the input and output stages were designed using the matching method to obtain the broadband characteristic. From the measurement, we could confirm to extend bandwidth and flat gain by integrating the shunt peaking technology with the cascode configuration. The cascode amplifier shows the broadband characteristic from 19 GHz to 53.5 GHz. Also, the average gain of this amplifier is about 6.5 dB over the bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.5
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• pp.471-482
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• 2015

In this paper, design and implementation of the 94 GHz Gunn oscillator and the evaluation of the maximum power of the Gunn diode used in the oscillator are presented. The 94 GHz Gunn oscillator is used InP Gunn diode and designed employing a WR-10 waveguide. The designed oscillator is fabricated through machining and its performance is measured. The fabricated oscillator shows an oscillation frequency of 95 GHz, output power of 12.64 dBm, and phase noise of -92.7 dBc/Hz at 1 MHz offset frequency. To evaluation the maximum power of the InP Gunn diode used in oscillator, the oscillator structure is modified to a structure having a diaphram. The height of thick diaphram which is used in the oscillator is varied. As a result, an oscillator has several different load impedances, which makes it possible to plot $G_L-V^2$ plot at the post plane. Using the $G_L-V^2$ plot, the maximum power of used Gunn diode including post is computed to be 16.8 dBm. Furthermore using the shorted and zero bias Gunn diode, the post loss used for DC biasing can be computed. Using the two losses, The maximum power of a InP Gunn diode is computed to be 18.55 dBm at 95 GHz. This result is close to a datasheet.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.3
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• pp.309-314
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• 2012

Flame flickering occurs mainly because of the buoyancy force for pool fires under ambient air. The cup-burner flame was used for experimental investigation of the effect of the oxidizer velocity on the gravitational instability. The results showed that the flickering frequency decreased with increasing oxidizer velocity. The frequency-buoyancy relation with nondimensional variables coincided with that of the buoyant flume and pool fires when the characteristic velocity was defined as the difference between the fuel and oxidizer velocities, which implies that the origin of the gravitational instability is the Kelvin-Helmholtz instability in the shear layer. The effect of the oxidizer composition on the instability was also examined through nitrogen dilution in the oxidizer stream. As the concentration of inert gas increased, the length of the blue flame increased and lift-off behavior was observed. The oscillation frequency was independent of the dilution ratio, but was related to the local flame structure.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.32 no.8
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• pp.29-36
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• 2004

Supersonic inlet buzz can be defined as unstable subcritical operation associated with fluctuating internal pressures and a shock pattern oscillating about the inlet entrance. The flow pulsations could result in flameout in the combustor or even structural damage to the engine. An experimental study was conducted to investigate the phenomenon of supersonic inlet buzz on axisymmetric, external-compression inlet. An inlet model with a cowl lip diameter of 30mm was tested at a free stream Mach number of 2.0. Subcritical instability was investigated by considering the frequency of pressure pulsation and shock wave structure at the inlet entrance. The results obtained show that total pressure recovery ratios were varied from 0.42 to 0.78, and capture area ratio from 0.34 to 0.98. The frequency of the subcritical flow increased with decrease in capture area ratios. Frequency was measured at $224{\sim}240Hz$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.669-676
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• 2012

In this paper, The method to improve the mass production method of the radar sensor is suggested by using the temperature compensation circuit which is composed with the thermister. The mass production became easier by decreasing the adjustment time for the exact oscillation frequency with the temperature compensation circuit that can support the proper gate bias voltage for the FET after the dielectric resonator is removed from the DRO(Dielectric Resonator Oscillator) of the radar sensor. Radar sensor with the proposed method has 15.67MHz oscillator frequency variation in the temperature range of $-20^{\circ}C-+55^{\circ}C$, 0.65dB magnitude variation, -105.47dBc phase noise characteristics at 1MHz which are better or similar temperature characteristics with the DRO whose oscillator frequency variation is 25MHz, magnitude variation is 0.42dB and phase noise is -107.40dBc in the same temperature range.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.345-355
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• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

• Journal of Biomedical Engineering Research
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• v.28 no.4
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• pp.503-511
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• 2007

Heart rate variability(HRV) is the clinical consequence of various influences of the autonomic nervous system(ANS) on heart beat. HRV can estimate the potential physiologic rhythm from the interval between consecutive beats(RR interval or HRV data), but cardiovascular system governed by ANS is in relation to respiration and autonomic regulation. It is known as RSA representing respiration-related HR rhythmic oscillation. Because the mechanism linking the variability of HR to respiration is complex, it has so far been unknown well. In this paper, we tried to evaluate 5-min RR interval segments under control of respiration in order to find out a proper respiration rate that can estimate the ANS function. 10 healthy volunteers were included to evaluate 5-min HRV data under 4 different respiration-controlled environments; 0.03Hz, 0.1Hz, 0.2Hz, and 0.4Hz respiration. HRV data were analyzed both in the frequency and the time domain, with cross-correlation coefficient(cross-coeff.) for HRV and respiration signal. The results showed maximum cross-coeff. of 0.84 at 0.1 Hz and minimum that of 0.16 at 0.4Hz respiration. Cross-coeff was decreased at a faster rate from 0.1Hz respiration. All mean SDNN, RMSSD, and pNN50 of time domain measures were 108.7ms, 71.85ms, and 28.47%, respectively, and LF, HF, and TP of frequency domain measures were $12,722ms^2,\;658.8ms^2$, and $7,836.64ms^2$ at 0.1Hz respiration, respectively. In conclusion, 0.1Hz respiration was observed to be very meaningful from time domain and frequency domain analysis in relation to respiration and autonomic regulation of the heart.