Browse > Article
http://dx.doi.org/10.6109/jkiice.2012.16.4.669

A Study on Improving Mass Production of the Radar Sensor Oscillator  

Kim, Byung-Chul (금오공학대학교 전자공학과)
Cho, Kyung-Rae (금오공학대학교 전자공학과)
Lee, Jae-Buom (금오공학대학교 전자공학과)
Kim, Dae-Hyung (금오공학대학교 전자공학과)
Abstract
In this paper, The method to improve the mass production method of the radar sensor is suggested by using the temperature compensation circuit which is composed with the thermister. The mass production became easier by decreasing the adjustment time for the exact oscillation frequency with the temperature compensation circuit that can support the proper gate bias voltage for the FET after the dielectric resonator is removed from the DRO(Dielectric Resonator Oscillator) of the radar sensor. Radar sensor with the proposed method has 15.67MHz oscillator frequency variation in the temperature range of $-20^{\circ}C-+55^{\circ}C$, 0.65dB magnitude variation, -105.47dBc phase noise characteristics at 1MHz which are better or similar temperature characteristics with the DRO whose oscillator frequency variation is 25MHz, magnitude variation is 0.42dB and phase noise is -107.40dBc in the same temperature range.
Keywords
DRO; Radar Sensor; Temperature Compensation Circuit; Mass Production;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Songxin Qi, Ke Wu, "Hybrid Integrated HEMT oscillator with a Multiple-Ring Nonradiative Dielectric(NRD) Resonator Feedback Circuit", IEEE Trans. Microwave Theory Tech.,vol .MTT-46, pp. 1552-1558, October. 1998.
2 김태진, "Implementation of a Microwave Doppler Sensor," 경남대학교 석사학위 논문, 2009
3 Chenming Zhou, Downey J., Stancil D, Mukherjee T, "A Compact Positioning and Velocity RF Sensor For Improved Inertial Navigation", Microwave Symposium Digest, 2009, pp 1421-1424
4 R. Soarse, "GaAs MESFET circuit design", Artech House, 1998.