• Polymer(Korea)
• /
• v.30 no.3
• /
• pp.253-258
• /
• 2006

We have fabricated vortical type organic thin film transistors (OTFTs) consisting of ITO/n type active material/Al gate/n type active material/Al using F16CuPc, NTCDA, PTCDA and PTCDI C-8. The effect of mobility of n type active materials and thin film thickness on current-voltage (I-V) characteristics and on/off ratios were investigated. The vortical type organic transistor using PTCDI C-8 exhibited low operation voltage and high on-off ratio. In addition, we have investigated the feasibility of application in organic light emitting transistor using light emitting polymer. Especially, the light emitting transistor consisting of ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al showed the maximum quantum efficiency of 0.054.

• ETRI Journal
• /
• v.35 no.4
• /
• pp.594-602
• /
• 2013

This paper proposes printed organic one-time programmable read-only memory (PROM). The organic PROM cell consists of a capacitor and an organic p-type metal-oxide semiconductor (PMOS) transistor. Initially, all organic PROM cells with unbroken capacitors store "0." Some organic PROM cells are programmed to "1" by electrically breaking each capacitor with a high voltage. After the capacitor breaking, the current flowing through the PROM cell significantly increases. The memory data is read out by sensing the current in the PROM cell. 16-bit organic PROM cell arrays are fabricated with the printed organic PMOS transistor and capacitor process. The organic PROM cells are programmed with -50 V, and they are read out with -20 V. The area of the 16-bit organic PROM array is 70.6 $mm^2$.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.5
• /
• pp.1659-1663
• /
• 2012

New semiconducting polymer, poly[1,4-bis(($E$)-2-(5-bromo-3-dodecylthiophen-2-yl)vinyl)benzene], was designed, synthesized and characterized. The structure of polymer was confirmed by $^1H$-NMR, IR and elemental analysis. The polymer was soluble in specific organic solvent. The weight-average molecular weights (MW) of polymer was found to be 11,000 with polydispersity of 1.82. UV-Visible absorption spectrum showed the maximum absorption at 428 nm (in solution) and 438 nm (in film). The highest occupied molecular orbital (HOMO) energy of the polymer is -5.36 eV by measuring cyclic voltammetry (CV). A solutionprocessed polymer thin film transistor device shows a mobility of $8.59{\pm}10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, an on/off current ratio of $2.0{\times}10^4$.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.6
• /
• pp.1649-1656
• /
• 2010

Internal reorganization energy due to the structural relaxation in hole or electron hopping mechanism is one of the measurements of key indices in designing an organic thin film transistor (OTFT) for flexible display devices. In this study, the reorganization energies of dicyanoanthracenes for the hole and electron transfer were estimated by adiabatic potential energy surface and normal mode analysis method in order to examine the effect on the energies for the positional variation of the cyano substituents in the anthracene as a protocol of acenes to design an organic field effect transistor. The reorganization energy for the hole transfer was reduced considerably upon cyanation of anthracene, especially at the 9,10-positions of anthracene, and the origin of the reduction was interpreted in terms of understanding the coupling of vibrational modes to the hole transfer.

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.8
• /
• pp.17-20
• /
• 2008

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.44-47
• /
• 2000

본 연구는 α-Si:H TFT(Amorphous Silicon Thin Film Transistor)를 대체 할 펜타센을 활성층으로 사용하는 박막 트랜지스터를 제작에 관한 것이다. 유기 박막 트랜지스터는 유기발광소자와 함께 유연한 디스플레이에 응용된다. 펜타센 박막 트랜지스터의 제작은 채널 길이 25㎛, 70㎛, 소스, 드레인, 게이트 전극으로 Au을 lift off 공정으로 제작하였으며, 펜타센은 OMBD(Organic Molecular Beam Deposition)로 기판온도를 80℃로 유지하여 증착하였다. 제작된 소자로부터 트랜지스터 전류-전압 특성곡선을 측정하였고, 게이트에 의한 채널의 전도도가 조절됨을 확인하였다. 그리고, 전달특성곡선으로부터 문턱전압과 전계효과 이동도를 추출하였다.

• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.253-256
• /
• 2002

In Currently, OTFTS are actively studied around the world because they are expected to create new novel applications, which can not be implemented by the conventional Si semiconductor, due to the unique characteristics of organic materials. In this paper, the hole field effect mobility has been improved to the level of a-Si TFTs with 0.3cm2/V.sec, simply applying the surface treatment process on the gate with organic molecules. In addition, the model has been suggested and the temperature dependence of hole mobility analyzed.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.659-660
• /
• 2007

• Electrical & Electronic Materials
• /
• v.17 no.7
• /
• pp.5-11
• /
• 2004

유기박막 트랜지스터 (Organic Thin Film Transistor : OTFT)에 관한 연구는 1980년 이후부터 시작되었으나 근래에 들어 전 세계적으로 본격적인 연구가 진행되고 있다. 이는 OTFT가 넓은 면적 위에 소자를 제작할 경우, 낮은 공정 온도를 필요로 하는 경우, 또한 구부림이 가능해야 하는 경우, 특히 저가 공정이 필요한 경우 등에 가장 적합한 것으로 생각되고 있기 때문이다. 이러한 OTFT는 미래의 정보표시 장치의 필수적인 요소들과 집적화가 매우 용이하다는 장점을 가지고 있다. 소재의 특성상 유기 발광 다이오드에 쓰이는 발광 유기물과 같은 유기 반도체가 OTFT의 제작에 사용 가능하므로 증착 공정, 물리적 화학적 성질이 매우 유사하다.(중략)

• Journal of the Korean institute of surface engineering
• /
• v.41 no.1
• /
• pp.1-5
• /
• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.