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http://dx.doi.org/10.4218/etrij.13.1912.0010

Printed Organic One-Time Programmable ROM Array Using Anti-fuse Capacitor  

Yang, Byung-Do (Department of Electronics Engineering, Chungbuk National University)
Oh, Jae-Mun (Department of Electronics Engineering, Chungbuk National University)
Kang, Hyeong-Ju (School of Computer Science & Engineering, Korea University of Technology and Education)
Jung, Soon-Won (Components & Materials Research Laboratory, ETRI)
Yang, Yong Suk (Components & Materials Research Laboratory, ETRI)
You, In-Kyu (Components & Materials Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.35, no.4, 2013 , pp. 594-602 More about this Journal
Abstract
This paper proposes printed organic one-time programmable read-only memory (PROM). The organic PROM cell consists of a capacitor and an organic p-type metal-oxide semiconductor (PMOS) transistor. Initially, all organic PROM cells with unbroken capacitors store "0." Some organic PROM cells are programmed to "1" by electrically breaking each capacitor with a high voltage. After the capacitor breaking, the current flowing through the PROM cell significantly increases. The memory data is read out by sensing the current in the PROM cell. 16-bit organic PROM cell arrays are fabricated with the printed organic PMOS transistor and capacitor process. The organic PROM cells are programmed with -50 V, and they are read out with -20 V. The area of the 16-bit organic PROM array is 70.6 $mm^2$.
Keywords
Anti-fuse; capacitor breaking; organic memory; printed electronics; programmable read-only memory (PROM);
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Times Cited By KSCI : 1  (Citation Analysis)
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1 E. Cantatore et al, "A 13.56-MHz RFID System Based on Organic Transponders," IEEE J. Solid-State Circuits, vol. 42, no. 1, Jan. 2007, pp. 84-92.   DOI   ScienceOn
2 K. Myny et al., "A 128b Organic RFID Transponder Chip, Including Manchester Encoding and ALOHA Anticollision Protocol, Operating with a Data Rate of 1529 b/s," IEEE ISSCC Dig. Tech. Papers, 2009, pp. 206-207.
3 K. Myny et al., "Unipolar Organic Transistor Circuits Made Robust by Dual-Gate Technology," IEEE J. Solid-State Circuits, vol. 46, no. 5, May 2011, pp. 1223-1230.   DOI   ScienceOn
4 K.-J. Baeg et al., "Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits," Adv. Mater., vol. 24, 2012, pp. 5433-5439.   DOI   ScienceOn
5 K.-J. Baeg et al., "High-Performance Top-Gated Organic Field-Effect Transistor Memory Using Electrets for Monolithic Printed Flexible NAND Flash Memory," Adv. Funct. Mater., vol. 22, 2012, pp. 2915-2926.   DOI   ScienceOn
6 K.-J. Baeg et al., "Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors," ETRI J., vol. 33, no. 6, Dec. 2011, pp. 887-896.   DOI
7 S.-W. Jung et al., "Low-Voltage-Operated Top-Gate Polymer Thin-Film Transistors with High-Capacitance P(VDF-TrFE)/PVDF-Blended Dielectrics," Current Appl. Phys., vol. 11, 2011, pp. S213-S218.
8 S.-W. Jung et al., "Low-Voltage-Operated Top-Gate Polymer Thin-Film Transistors with High Capacitance Poly(vinylidene fluoride-trifluoroethylene)/Poly(methylmethacrylate) Dielectrics," J. Appl. Phys., vol. 108, 2010, pp. 102810:1-102810:5.
9 S.-W. Jung et al., "Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer," Current Appl. Phys., vol. 10, 2010, pp. S58-S61.   DOI   ScienceOn
10 S.-M. Yoon et al., "Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below $200^{\circ}C$," Adv. Funct. Mater., vol 20, 2010, pp. 921-926.   DOI   ScienceOn
11 G. Gelinck et al., "Organic Transistors in Optical Displays and Microelectronic Applications," Adv. Mater., vol. 22, 2010, pp. 3778-3798.   DOI   ScienceOn
12 T. Sekitani et al., "Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays," Sci., vol. 326, 2009, pp. 1516-1519.   DOI   ScienceOn
13 Z. Liu et al., "Memory Effect of a Polymer Thin-Film Transistor with Self-Assembled Gold Nanoparticles in the Gate Dielectric," IEEE Trans. Nanotechnol., vol. 5, no. 4, July 2006, pp. 379-384.   DOI   ScienceOn
14 P. Heremans et al., "Polymer and Organic Nonvolatile Memory Devices," Chem. Mater., vol. 23, 2011, pp. 341-358.   DOI   ScienceOn
15 K. Asadi et al., "Organic Non-volatile Memories from Ferroelectric Phase-Separated Blends," Nat. Mater., vol. 7, 2008, pp. 547-550.   DOI   ScienceOn
16 R.C.G. Naber et al., "High-Performance Solution-Processed Polymer Ferroelectric Field-Effect Transistors," Nat. Mater. vol. 4, 2005, pp. 243-248.   DOI   ScienceOn
17 J. Kim et al., "Highly Soluble Poly(thienylenevinylene) Derivatives with Charge-Carrier Mobility Exceeding $1cm^2V^{-1}s^{-1}$," Chem. Mater., vol. 23, 2011, pp. 4663-4665.   DOI   ScienceOn