• Title/Summary/Keyword: Organic substrates

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Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates

  • Kim, Ji Hoon;Hwang, Sung-Min;Baik, Kwang Hyeon;Park, Jung Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.557-565
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    • 2014
  • We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

Synthesis and Characterization of SnO2 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition Using SnCl4 Precursor and Oxygen Plasma

  • Lee, Dong-Gwon;Kim, Da-Yeong;Gwon, Se-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.254-254
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    • 2016
  • Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

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Change in Water Contact Angle on Electrospray-Synthesized SiO2 Coated Layers by Plasma Exposure (플라즈마 조사에 의한 전기분무합성 SiO2 코팅층의 물접촉각 변화)

  • Kim, Jae-Hun;Lee, Junseong;Kim, Ji Yeong;Kim, Sang Sub
    • Korean Journal of Materials Research
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    • v.24 no.11
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    • pp.639-643
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    • 2014
  • Hydrophilic $SiO_2$ layers were obtained by the atmospheric-pressure plasma treatment. Superhydrophobic $SiO_2$ layers were first deposited by the electrospray deposition method. The electrospunable solution that was prepared based on the solgel method was sprayed on Si (100) substrates. The surface of the electrosprayed $SiO_2$ layers consisted of the agglomeration of nano-sized grains, which led to a very high roughness and revealed a very high contact angle to water droplets over $162^{\circ}$. After having been exposed to the atmospheric $Ar/O_2$ plasma, the observed superhydrophobicity of the $SiO_2$ layers were greatly changed: a dramatic variation of the water contact angle from $162^{\circ}$ to $3^{\circ}$, namely realization of superhydrophillicity. Interestingly, the surface microstructure was almost preserved. According to the XPS analysis, it is more likely that thanks to the plasma exposure, the surface of $SiO_2$ layers will be cleaned in terms of organic species that are hydrophobic-inducing, consequently leading to the hydrophilic nature observed for the plasma-exposed $SiO_2$ layers.

Dielectric Properties of $BaTiO_3$ System Ferroelectric Thick Films Doped with $Dy_2O_3$ ($Dy_2O_3$$BaTiO_3$계 강유전체 후막의 유전특성)

  • Noh, Hyun-Ji;Yun, Sang-Eun;Park, Sang-Man;Ahn, Byeong-Lib;Lee, Sung-Gap
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.9
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    • pp.1609-1613
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    • 2007
  • (Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-, Sr- and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around 670^{\circ}C $ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with increasing amount of $Dy_2O_3$. The average grain size and thickness of the BSCT specimens doped with 0.1 mol% $Dy_2O_3$ were approximately $1.9{\mu}m$ and $70{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_2O_3$, the values of the BSCT thick films doped with 0.1 mol% $Dy_2O_3$ were 3697 and 0.4% at 1 kHz, respectively. The leakage current densities in all BSCT thick films were less than $10^{-9}A/cm^2$ at the applied electric field range of 0-20 kV/cm.

Biodegradation of the Organic Solvents by an Isolated Pseudomonas sp. BCNU 154

  • Kim, Mi-Rim;Jeong, Mi-Yeon;Seong, Eun-Mi;Lee, Ho-Won;Lee, Yeong-Geun;Kim, Yong-Gyun;Park, Jeong-Uk;Ju, U-Hong
    • 한국생물공학회:학술대회논문집
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    • 2000.04a
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    • pp.374-377
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    • 2000
  • A strain of Pseudomonas sp. BCNU 154 was isolated from contaminated soil with orangic solvents as the sole source of carbon and energy. It utilized an exceptionally wide aromatic substrates. The strain BCNU 154 was able to utilize toluene, p-xylene, ethylbenzene, cumene, as the only carbon and energy source. When toluene or p-xylene was used as the sole carbon and energy source, the compound was rapidly degraded with significant increase in biomass concentruction. The biodegradation of this compound was observed when ethylbenzene or cumene was supplied on the carbon source and energy source, which may be a candidate extremophilic bacterium for the bioremediation technology.

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Fabrication of YB $a_2$C $u_3$ $O_{7-x}$ film on a (100) SrTi $O_3$ single crystal substrate by single liquid source MOCVD method ((100) SrTi $O_3$ 단결정 기판위에 단일 액상 원료 MOCVD 법에 의한 YB $a_2$C $u_3$ $O_{7-x}$ 박막 제조)

  • Jun Byung-Hyuk;Choi Jun-Kyu;Kim Ho-Jin;Kim Chan-Joong
    • Progress in Superconductivity and Cryogenics
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    • v.6 no.3
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    • pp.16-20
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    • 2004
  • YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

Application of spent oyster mushroom substrate for bag cultivation of Lentinula edodes (느타리버섯 수확후 배지를 이용한 표고 배지 개발)

  • Kim, Jeong-Han;Kang, Young-Ju;Baek, Il-Sun;Jeoung, Yun-Kyeoung;Lee, Yong-Seon;Lee, Young-Soon
    • Journal of Mushroom
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    • v.16 no.2
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    • pp.70-73
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    • 2018
  • To determine the optimum amount of spent oyster mushroom substrate (SOMS) for use in cultivation of Lentinula edodes, the chemical properties of the substrate and culture conditions of Lentinula edodes were investigated. Replacing 20-50% of a sawdust substrate with SOMS yielded a C/N ratio of 62-76. In case of substrates containing SOMS, the total nitrogen and phenolic contents of were higher, whereas fructose and organic acid contents were lower than those of the control substrate. Cultivation tests showed that the 3-cycle yield of 20% SOMS treatment was 286.7 g, similar to that of the control, while 50% SOMS treatment significantly decreased the yield. In conclusion, development of oak mushroom substrate using SOMS would recycle waste products and decrease material costs.

Epitaxial Growth of Graphene by Surface Segregation and Chemical Vapor Deposition on Ru(0001) Studied with Scanning Tunneling Microscopy (주사형 탐침 현미경을 이용한 Ru(0001) 위 그래핀의 에피탁시얼 성장 조건에 대한 연구)

  • Jang, Won-Jun;Kahng, Se-Jong
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.285-290
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    • 2013
  • Epitaxial graphene on metal substrates provides excellent platforms to study its atomic and electronic structures, and can be grown either by surface segregation of carbon or by chemical vapor deposition. The growth behaviors of the two methods, however, have not been directly compared each other. Here, we studied domain structures of graphene grown by three different methods, surface segregation, post-annealing with adsorbed ethylene, and high-temperature dose of ethylene, using scanning tunneling microscopy. The first two methods resulted in graphene regions with areas of $100nm^2$, whereas the third method showed large area graphene (> $10^4nm^2$) with regular hexagonal Moire patterns, implying that high-temperature dose of ethylene is preferable for further studies on graphene such as additional growth of organic molecules.

Microstructure and Magnetic Properties of Til-xCoxO2 Diluted Magnetic Semiconductor Thin Films with Various Co Concentrations by Metal Organic Chemical Vapor Deposition (유기 금속 화학 기상 증착법으로 제조된 자성반도체 Til-xCoxO2 박막의 Co 조성 변화에 따른 미세구조 및 자기적 특성)

  • Seong, Nak-Jin;Oh, Young-Nam;Cho, Chae-Ryong;Yoon, Soon-Gil
    • Korean Journal of Materials Research
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    • v.13 no.11
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    • pp.737-741
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    • 2003
  • Polycrystalline $Ti_{l-x}$ $Co_{x}$ $O_2$thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{l-x}$ $Co_{x}$ $O_2$thin films with $x\leq$0.05 showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the X$l-x_{l-x}$ $Co_{x}$X$O_2$phases. On the other hand, in case of thin films above x = 0.05, Co-rich clusters formed in a homogeneous $Ti_{l-x}$ $Co_{x}$ $O_2$phase, and the overall ferromagnetic (FM) properties depended on both FMTCO and FMCo. Co-rich clusters with about 10-150 nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

Secretory Expression, Functional Characterization, and Molecular Genetic Analysis of Novel Halo-Solvent-Tolerant Protease from Bacillus gibsonii

  • Deng, Aihua;Zhang, Guoqiang;Shi, Nana;Wu, Jie;Lu, Fuping;Wen, Tingyi
    • Journal of Microbiology and Biotechnology
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    • v.24 no.2
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    • pp.197-208
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    • 2014
  • A novel protease gene from Bacillus gibsonii, aprBG, was cloned, expressed in B. subtilis, and characterized. High-level expression of aprBG was achieved in the recombinant strain when a junction was present between the promoter and the target gene. The purified recombinant enzyme exhibited similar N-terminal sequences and catalytic properties to the native enzyme, including high affinity and hydrolytic efficiency toward various substrates and a superior performance when exposed to various metal ions, surfactants, oxidants, and commercial detergents. AprBG was remarkably stable in 50% organic solvents and retained 100% activity and stability in 0-4 M NaCl, which is better than the characteristics of previously reported proteases. AprBG was most closely related to the high-alkaline proteases of the subtilisin family with a 57-68% identity. The secretion and maturation mechanism of AprBG was dependent on the enzyme activity, as analyzed by site-directed mutagenesis. Thus, when taken together, the results revealed that the halo-solvent-tolerant protease AprBG displays significant activity and stability under various extreme conditions, indicating its potential for use in many biotechnology applications.