• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.631-636
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• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.49-52
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• 2001

The derivatives of spironaphthooxazine gause photoisomerization when they are illuminate with UV light. We investigated the photoisomerization of spironaphthooxazine derivatives for holographic memory. Langmuir-Blodgett (LB) films contain amphiphile spironaphthooxazine derivatives which can be applied in molecular devices by a change of molecular level energy and a refractive index. In order to investigate the photoisomerization of spironaphthooxazine derivatives at the air/water energy and a refractive index. In order to investigate the photoisomerization of spironaphthooxazine derivatives at the air/water interfaces, spironaphthooxazine derivatives with side alkyl chains were synthesized. The films of the spironaphthooxazine derivatives were characterized by the measurement of UV/vis spectroscopy, Brewster Angle Microscopy (BAM) and Atomic Force Microscopy (AFM). The monolayers of the spironaphthooxazine derivatives mixed with stearic acid were stable at the air/water interface and visualized by the measurement of BAM. The spironaphthooxazine derivative monolayers on the glass surface showed the maximum efficiency of diffraction as 0.99% by the measurement of holography.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.290-292
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• 2015

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10⁵ cycles without degradation) and long retention time (5 × 10³ s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.212-214
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• 2004

In this study, we fabricated the organic thin film by self-assembly method by using nitro-group and methoxy-group organic molecule. Also, we selected the organic single molecule in organic thin film and measured current-voltage characteristics by using scanning tunneling microscopy. The Organic molecules that use in an experiment is 4,4'-(diethynylphenyl)-2'-nitro-1-benzen ethiol and 4-[2,5-dimethoxy-4-ph enylethynylphenyl]ethynylphenylethanthiol. 4,4'-(dimet hynylphenyl)-2'-nitro-1-benzenethiol is applied widely in molecular electronic device and 4-[2,5-dime thoxy-4-phenylethynylphenyl]ethynylphenylethanthiol composed in Korea Research Institute of Chemical Technology. To be confirmed the formation of the self-assembled monolayers, we observed the real time frequency shift of the QCM and investigated surface of the self-assembled monolayers the using STM. With this, we measured current to the organic single molecule, in condition of the air state. As a result, we confirmed in constant voltage that properties of negative differential resistance. Using properties of negative differential resistance to get from this study, application is expected to be molecular switching device, memory device and logic device.

• Journal of Adhesion and Interface
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• v.22 no.4
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• pp.144-152
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• 2021

Understanding charge transfer across the interface between organic semiconductor and gate insulator gives insight into the development of high-performance organic memory as well as highly stable organic field-effect transistors (OFETs). In this work, we firstly unveil a novel interfacial charge transfer mechanism, in which hole transfer from organic semiconductor to polymer insulator was nonlinearly boosted by localized states coupling. For this, OFETs based on rubrene single crystal semiconductor and Mylar gate insulator were fabricated via vacuum lamination, which allows stable repetition of lamination and delamination between semiconductor and gate insulator. The surfaces of rubrene single crystal and Mylar film were selectively degraded by photo-induced oxygen diffusion and UV-ozone treatment, respectively. Consequently, we found that the interfacial charge transfer and resultant bias-stress effect were nonlinearly boosted by coupling between localized states in rubrene and Mylar. In particular, the small number of localized states in rubrene single crystal provided fluent pathway for interfacial charge transport.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.75-77
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• 2008

Flexible electronics devices such as plastic display, thin film battery, membrane switch, organic memory for smart card applications will be presented. The performance and power consumption of various display technologies will be compared for OTP requirement in smart cards. Wireless power transmission by RF coupling through an antenna provides a potential power solution to smart cards. Finally, the general trend of smart card future developments will be discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.225-225
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• 2005

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.464-466
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• 2000

In the study We measured the MDC across lipidazobenzene monolayer system was the substrate. We discuss the cis-trans isomerization in Langmuir-Blodgett(LB) films and examine the relationship between the structure of mixed LB films and the generation of MDCs due to photoisomerization. As results, mixed induce monolayer of view to memory and switching, it's own function by particles level think. Also, transmission results of stimulus signal it's form by current to appear.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.290.2-290.2
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• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.