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http://dx.doi.org/10.17702/jai.2021.22.4.144

Understanding Interfacial Charge Transfer Nonlinearly Boosted by Localized States Coupling in Organic Transistors  

Han, Songyeon (Department of Materials Engineering and Convergence Technology, Gyeongsang National University)
Kim, Soojin (Department of Materials Engineering and Convergence Technology, Gyeongsang National University)
Choi, Hyun Ho (Department of Materials Engineering and Convergence Technology, Gyeongsang National University)
Publication Information
Journal of Adhesion and Interface / v.22, no.4, 2021 , pp. 144-152 More about this Journal
Abstract
Understanding charge transfer across the interface between organic semiconductor and gate insulator gives insight into the development of high-performance organic memory as well as highly stable organic field-effect transistors (OFETs). In this work, we firstly unveil a novel interfacial charge transfer mechanism, in which hole transfer from organic semiconductor to polymer insulator was nonlinearly boosted by localized states coupling. For this, OFETs based on rubrene single crystal semiconductor and Mylar gate insulator were fabricated via vacuum lamination, which allows stable repetition of lamination and delamination between semiconductor and gate insulator. The surfaces of rubrene single crystal and Mylar film were selectively degraded by photo-induced oxygen diffusion and UV-ozone treatment, respectively. Consequently, we found that the interfacial charge transfer and resultant bias-stress effect were nonlinearly boosted by coupling between localized states in rubrene and Mylar. In particular, the small number of localized states in rubrene single crystal provided fluent pathway for interfacial charge transport.
Keywords
Organic transistors; Charge transfer; Bias-stress; Interface;
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