Browse > Article
http://dx.doi.org/10.4313/TEEM.2015.16.5.290

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite  

Senthilkumar, V. (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
Kim, Yong Soo (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.5, 2015 , pp. 290-292 More about this Journal
Abstract
We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (105 cycles without degradation) and long retention time (5 × 103 s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.
Keywords
Polymer composite; Spin coating; Resistive memory; Retention; Endurance;
Citations & Related Records
연도 인용수 순위
  • Reference
1 D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and Q. Q. Zhang, Phys. Rev. B, 73, 245427 (2006). [DOI: http://dx.doi.org/10.1103/PhysRevB.73.245427]   DOI
2 G. Liu, X. Zhuang, Y. Chen, B. Zhang, J. Zhu, C. X. Zhu, K. G. Neoh, and E. T. Kang, Appl. Phys. Lett., 95, 253301 (2009). [DOI: http://dx.doi.org/10.1063/1.3276556]   DOI
3 X. D. Zhuang, Y. Chen, G. Liu, P. P. Li, C. X. Zhu, E. T. Kan, K. G. Noeh, B. Zhang, J. H. Jhu, and Y. X. Li, Adv. Mater., 22, 1731 (2010). [DOI: http://dx.doi.org/10.1002/adma.200903469]   DOI
4 C. Wu, F. Li, Y. Zhang, T. Guo, and T. Chen, Appl. Phys. Lett., 99, 042108 (2011). [DOI: http://dx.doi.org/10.1063/1.3619815]   DOI
5 F. Li, D. I. Son, H. M. Cha, S. M. Seo, B. J. Kim, H. J. Kim, J. H. Jung, and T. W. Kim, Appl. Phys. Lett., 90, 222109 (2007). [DOI: http://dx.doi.org/10.1063/1.2745219]   DOI
6 S. Patil, Q. Lai, F. Marchioni, M. Jung, Z. Zhu, Y. Chen, and F. Wudl, J. Mater. Chem., 16, 4160 (2006). [DOI: http://dx.doi.org/10.1039/b605769a]   DOI
7 D. I. Son, T. W. Kim, J. H. Shim, J. H. Jung, D. U. Lee, J. M. Lee, W. I. Park, and W. K. Choi, Nano Lett., 10, 2441 (2010). [DOI: http://dx.doi.org/10.1021/nl1006036]   DOI
8 D. I. Son, D. H. Park, W. K. Choi, S. H. Cho, W. T. Kim, and T. W. Kim, Nanotechnology, 20, 195203 (2009). [DOI: http://dx.doi.org/10.1088/0957-4484/20/19/195203]   DOI
9 CH.V.V. Ramana, M. K. Moodely, V. Kannan, A. Maity, J. Jayaramudu, and W. Clarke, Sensors and Actuators B, 161, 684 (2012). [DOI: http://dx.doi.org/10.1016/j.snb.2011.11.012]   DOI
10 T. Y. Chang, Y. W. Cheng, and P. T. Lee, Appl. Phys. Lett., 96, 043309 (2010). [DOI: http://dx.doi.org/10.1063/1.3299265]   DOI
11 G. T. Wright, Nature, 182, 1296 (1958). [DOI: http://dx.doi.org/10.1038/1821296a0]   DOI
12 Y. Park, D. Gupta, C. Lee, and Y. Hong, Org. Electron., 13, 2887 (2012). [DOI: http://dx.doi.org/10.1021/ja0717459]   DOI
13 T. L. Choi, K. H. Lee, W. J. Woo, S. Lee, T. W. Lee, and M. Y. Chae, J. Am. Chem Soc., 129, 9842 (2007). [DOI: http://dx.doi.org/10.1021/ja0717459]   DOI
14 T. W. Kim, Y. Yang, F. Li, and W. L. Kwan, NPG Asia Mater., 4, e18 (2012). [DOI: http://dx.doi.org/10.1038/am.2012.32]   DOI
15 J. Ouyang, C. W. Chu, C. R. Szmanda, L. Ma, and Y. Yang, Nat. Mater., 3, 918 (2004). [DOI: http://dx.doi.org/10.1038/nmat1269]   DOI