• 전자공학회논문지 IE
• /
• v.43 no.4
• /
• pp.99-104
• /
• 2006

The Langmuir-Blodgett(LB) technique has attracted considerable interest in the fabrication of electrical and electronic devices. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed u and the molecular area Am. Compression speed a was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9$\sim$21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Journal of the Korea Institute of Building Construction
• /
• v.16 no.2
• /
• pp.117-123
• /
• 2016

Glass wool is a material that has been used as a heat insulator in various fields including construction industry. Since it is a nonflammable material, it does not generate toxic gases on fire, and thus public agencies recommend using glass wool as a heat insulator instead of other organic materials. However, repeated drying and wetting cycles can deteriorate thermal property of glass wool due to the shrinkage and reduction in pore size. For this reason, it needs to be replaced periodically, and waste materials are generated. This research aims to utilize waste glass wool as additives for increasing mechanical properties of concrete. According to the experimental results, it was found that glass wool has weak pozzolanic activity, and beneficial effect on both compressive and flexural strength. The optimum amount found in this experimental work was 0.5% volumetric addition to the concrete.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.1 s.38
• /
• pp.37-42
• /
• 2006

The preparation and processing of PVP-gate insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). One of polyvinyl series, poly-4-vinyl phenol(PVP) was used as a solute and propyleneglycol monomethyl etheracetate(PGMEA) as a solvent in the formation of organic gate solutions. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compounds. From the measurements of electrical insulating characteristics of metal-insulator-metal (MIM) samples, PVP-based insulating layers showed lower leakage current according to the increase of concentration of PVP and poly (melamine-co-formaldehyde) to PGMEA in the formation of organic solutions. The PVP(20 wt%) copolymer with composition of 20 wt% PVP to PGMEA and cross-linked PVPs in which 5 wt% and 10 wt% poly (melamine-co-formaldehyde) hardeners had been additional]y mixed into PVP(20 wt%) copolymers were used as gate dielectrics in the fabrication of OTFTs, respectively. In our experiments, the maximum field effect mobility of $0.31cm^2/Vs$ could be obtained in the 5 wt% cross-linked PVP(20 wt%) device and the highest on/off current ratio of $1.92{\times}10^5$ in the 10 wt% cross-linked PVP(20 wt%) device.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.4
• /
• pp.160-164
• /
• 2008

Insulating and conducting 12CaO ${\cdot}7Al_2O_3$ (Cl2A7)-doped indium tin oxide (ITO) (ITO:Cl2A7 insulator and electride) thin films were deposited on glass substrates by an RF magnetron co-sputtering method with increasing number of insulating and conducting Cl2A7 target chips. The structural, electrical and optical properties of these films were investigated. The carrier concentration decreased and resistivity increased in the films with increasing number of Cl2A7 target chips. The optical transmittance of all of the thin films was above 80 % in the visible wavelength range. The structural property and surface roughness of the films were examined and the decrease of crystallinity and surface roughness was strongly dependent on the change of grain size.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1313-1314
• /
• 2007

This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.379-382
• /
• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of $0.3 cm^2/V.sec$ and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$ and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of $0.3Cd/m^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05d
• /
• pp.82-85
• /
• 2003

산업의 고도화 및 환경오염의 문제로 1970년대부터 실리콘고무를 이용한 애자의 사용이 시도되기 시작되었다. 그로 인해 실리콘 고무의 표면열화에 대한 수많은 연구가 현재까지 행해지고 있다. 그러나 고온성 형압즉방식으로 제작하는 유기애자의 경우 제조시 발생할 수 있는 내부보이드에 대한 연구는 미흡한 현실이다. 이에 본 연구에서는 실리콘고무의 내부보이드의 형태변화에 따른 전기적열화특성을 연구하기 위하여 3층으로 적층시킨 실리콘 고무의 중간층에 임의적으로 4가지형태의 내부보이드를 성형하여 전압을 변화시키면서 방전전류 및 방전전력을 측정하였다. 그 결과, 보이드의 존재로 방전전류 및 방전전력의 증가를 볼 수 있었으며, 보이드형상의 내부각이 좁을수록 방전전류 및 방전전력값이 커지는 것을 볼 수 있었다.

• 한국생물공학회:학술대회논문집
• /
• 2000.04a
• /
• pp.149-152
• /
• 2000

In recent years, various artificial molecular photodiode have been fabricated by mimicking the electron transport function of biological photosynthesis. And now, we have been investigated the protein-organic hetero thin film photodiode using GFP as an sensitizer based on the redox potential difference of functional molecules. In this paper, shows molecular photodiode consisting of green fluorescence protein(GFP). viologen and TCNQ. The TCNQ and viologen were deposited onto ITO coated glass by LB technique. And GFP molecule was adsorption onto the viologen LB film surface by self-assembly method. Finally, The Al deposition onto GFP/viologen/TCNQ film surface was performed to make a top electrode. As a result, The MIM(metal/Insulator/Metal) structured device was constructed. The input light of 460nm wavelength was generated by the xenon lamp system, and then the photocurrent produced from the molecular device was detected through a current-voltage(I-V) measuring unit (SMU Model 236, Keithley, USA). An artificial molecular photodiode using protein(GFP)-adsorbed hetero-LB film is presented as a model system for the bioelectronic device based on the biomimesis.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1284-1287
• /
• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.309-313
• /
• 2006

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below $200^{\circ}C$. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over $20cm^2/Vsec$ was fabricated on transparent plastic substrate and drived OLED display successfully.