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Electrical and optical properties of doped indium tin oxide thin films for top emission organic light emission devices  

Jung, C.H. (SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University)
Kang, Y.K. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Yoon, D.H. (SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Abstract
Insulating and conducting 12CaO ${\cdot}7Al_2O_3$ (Cl2A7)-doped indium tin oxide (ITO) (ITO:Cl2A7 insulator and electride) thin films were deposited on glass substrates by an RF magnetron co-sputtering method with increasing number of insulating and conducting Cl2A7 target chips. The structural, electrical and optical properties of these films were investigated. The carrier concentration decreased and resistivity increased in the films with increasing number of Cl2A7 target chips. The optical transmittance of all of the thin films was above 80 % in the visible wavelength range. The structural property and surface roughness of the films were examined and the decrease of crystallinity and surface roughness was strongly dependent on the change of grain size.
Keywords
12CaO $7Al_2O_3$; Top emission organic light emission devices; Indium tin oxide;
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