• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.22-30
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• 2002

The nucleation of copper(Cu) with (hfac)iu(VTMS) oganometallic precursor is investigated for Si, $Sio_2$, TiN, $W_2N$ substrates. As the deposition temperature is increased, the dominant growth mechanism is observed to change from the nucleation of Cu particles to the clustering of Cu nuclei around $180^{\ciec}C$, independent of the employed substrates. It is also observed that the cleaning of substrate surfaces with the diluted HF solution improves the selectivity of Cu nucleation between TiN and $Sio_2$ substrates. Dimethyldichlorosilane treatment is found to passivate the surface of TiN substrate, contrary to the generally accepted belief, when the TiN substrate is cleaned by $H_2O_2$ solution before the treatment.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.96-100
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• 2017

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been extensively studied as the active material in ammonia gas sensor because of its fast response time, high conductivity and environmental stability. It is well known that a post annealing process for organic devices based on PEDOT:PSS significantly increases the device performance. In this study, we propose the solvent annealing of PEDOT:PSS and investigated its effects. As a results, post solvent annealing on PEDOT:PSS lead to the surface chemical and physical properties change. These changes result in improved conductivity of the PEDOT:PSS. In additional, ammonia sensitivity of solvent annealed PEDOT:PSS become higher than pristine polymer film. The enhancement is mainly caused by the depletion of gas barrier PSS and structural re-forming PEDOT networks. We believe that the post solvent annealing is a promising method to achieve highly sensitivity PEDOT:PSS films for applications in efficient, low-cost and flexible ammonia gas sensor.

• ETRI Journal
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• v.27 no.5
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• pp.545-550
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• 2005

We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm $AlO_x$ film on both sides of the PES film gave a water vapor transition rate (WVTR) of $0.062 g/m^2/day (@38^{\circ}C,\;100%\;R.H.)$. Further, the double layer of 200 nm $SiN_x$ film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm $AlO_x$ film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance $(1300 cd/m^2)$ was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited $SiN_x$ and 30 nm of ALD-deposited $AlO_x$.

• Journal of IKEEE
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• v.22 no.1
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• pp.209-212
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• 2018

In this work, we developed P(VDF-TrFE) organic/ferroelectric material based metal-ferroelectric-metal (MFM) capacitors in order to improve the switching characteristics of gallium nitride (GaN) heterojunction field-effect transistors (HFET). The 27 nm-thick P(VDF-TrFE) MFM capacitors exhibited about 60 ~ 96 pF capacitance with a polarization density of $6{\mu}C/cm^2$ at 4 MV/cm. When the MFM capacitor was connected in series with the gate electrode of GaN HFET, the subthreshold slope decreased from 104 to 82 mV/dec.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.205-212
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• 2002

The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.1-6
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• 2006

The white organic light emitting diode(OLED) with two-wavelength was fabricated using the DPVBi of blue emitting material and a series of orange colar fluorescent dye(Rubrene) by vaccum evaporation processes. The basic structure of OLED was ITO/TPD$(225{\AA})$/DPVBi/Rubrene/BCP$(210{\AA})/Alq_3(225{\AA})/Al(1000{\AA})$. We analyzed the fabricated device through the changes of the DPVBi and Rubrene layer's thickness. We obtained the white OLED with the CIE coordinate of the device was (0.29, 0.33) and luminescence of $1000cd/m^2$ at applied voltage of 15V when 4he thickness of DPVBi layer was 210${\AA}$ and the thickness of Rubrene layer was 180${\AA}$.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.353-356
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• 2001

The relation between the flocculation and dispersion of metal oxide powders and the properties of solvents, such as dielectric constant and solubility parameter, was investigated for TiO$_2$, $Al_2$O$_3$and Fe$_2$O$_3$particles. The particle size and median diameter of these metal oxides were measured in many organic solvents, from which the effect of solvents on the flocculation and dispersion of metal oxide powders was considered. The metal oxide powders of TiO$_2$, $Al_2$O$_3$and Fe$_2$O$_3$tend to disperse in a solvent of higher polarity, whereas they are apt to flocculate in a solvent of low dielectric constant, because the Hamaker constant between the particles becomes larger in such a solvent. There we, however, some solvents that do not obey these tendencies. It is possible to evaluate the flocculation and dispersion of these metal oxide powders in many solvents by using numeral balances of Hansen’s three-dimensional solubility parameter (f$_{d}$, f$_{p}$ and f$_{h}$). There exists a solvent giving the optimal dispersion for each metal oxide, and the optimal dispersion point of f$_{d}$, f$_{p}$ and f$_{h}$ is determined by the combination of various metal oxide powders and solvents.nts.nts.nts.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.719-724
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• 2001

The objective of this investigation was to separate silicon and silica for recycling by the liquid-liquid separation technique. In the preparation of silicon (Si) single crystal, a small amount of silicon is fixed on the surface of silica (quartz, $SiO_2$) crucible. The used crucible is crushed for recycling both silicon and silica in a high purity from the mixed powder. Zeta-potential of silicon and silica are almost the same at pH higher than 3. Their separation by simple flotation is ruled out. However, their hydrophobic characteristics are different in several different organic solvent from the measurement of contact angle. Therefore, the liquid-liquid extraction is employed to separate silicon and silica. The result indicates that the organic solvent mixed with dodecyl ammonium acetate could extracted the silicon powder at high purity (97-100%) with high recovery from the silica powder in the water phase.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1618-1620
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• 2002

Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly, and accumulated in solid state only.