• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1754-1756
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• 2000

Organic semiconductors based on fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. For the gate dielectric, polyamic acid was spin-coated and cured into polyimide at 350$^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was 50${\mu}m$ and 5mm. It was found that field effect mobility was 0.012$cm^{2}/Vs$, and on/off current ratio was $10^5$.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.72-76
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• 2020

The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V^-1s^-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

• International journal of advanced smart convergence
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• v.12 no.4
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• pp.1-7
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• 2023

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.84-87
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• 2005

본 논문에서는 p-type 고분자 물질인 P3HT (Poly-3-hexylthiophene)를 잉크젯 프린팅 방식으로 활성화층을 적층함으로써 Organic thin film transistor를 제작하여 이에 대한 특성을 연구하였다. Piezoelectric 방식의 잉크젯 프린팅을 이용하여 P3HT single drop jetting 시 두께 $150{\sim}200{\AA}$, 직경 약 70 ~ 80 um정도의 drop profile을 얻을 수 있었다. P3HT의 solvent로서 Chlorobenzene을 사용하여 농도 약 0.5 wt.%의 Ink-jet용 ink를 제작하여 이를 Channel Width 37, 236 um 크기의 Au 전극 위에 jetting 하여 각각의 특성을 측정하였다. 상기 실험은 상온의 외부환경에서 실시되었으며 실험 결과 최대 ${\mu}=1{\times}10^{-2}\;cm^2/Vsec$, $I_{on}/I_{off}=10^3{\sim}10^4$ 정도로서 off current가 높은 편이나 이동도 측면에서는 다른 방법의 박막 증착 실험결과와 비교할 때 동등 수준의 결과를 얻을 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.373-378
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• 2006

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1638-1641
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• 2008

We have investigated the effectiveness of a gravure printing method for the fabrication of organic light-emitting diode (OLED) and Organic Thin Film Transistor (OTFT). Printing of the organic layers was performed with a small-scale gravure coating machine, while the metallic layers were vacuum-evaporated. Devices with gravure-printed layers are at least comparable with the spin-coated devices. Effects of the solvent formulation and surface energy mismatch between the organic layer materials on the printed patterns and device performance were discussed. We will present the initial design and experimental data of OTFT fabricated by roll-type soft contact transfer process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.53-54
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• 2005

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

• Macromolecular Research
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• v.17 no.9
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• pp.646-650
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• 2009

We report the fabrication of pentacene organic field-effect transistors (OFETs) using a fluorinated styrene-alt-maleic anhydride copolymer gate dielectric, which was prepared from styrene derivatives with a fluorinated side chain [$-CH_2-O-(CH_2)_2-(CF_2)_5CF_3$] and maleic anhydride through a solution polymerization technique. The fluorinated side chain was used to impart hydrophobicity to the surface of the gate dielectric and maleic anhydride was employed to improve its wetting properties. A field-effect mobility of 0.12 cm$^2$/Vs was obtained from the as-prepared top-contact pentacene FETs. Since various functional groups can be introduced into the copolymer due to the nature of maleic anhydride, its physical properties can be manipulated easily. Using this type of copolymer, the performance of organic FETs can be enhanced through optimization of the interfacial properties between the gate dielectric and organic semiconductor.

• Current Optics and Photonics
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• v.2 no.2
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• pp.153-164
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• 2018

In semiconductor manufacturing, critical dimensions indicate the features of patterns formed by the semiconductor process. The purpose of measuring critical dimensions is to confirm whether patterns are made as intended. The deposition process for an organic light emitting diode (OLED) forms a luminous organic layer on the thin-film transistor electrode. The position of this organic layer greatly affects the luminescent performance of an OLED. Thus, a system for measuring the position of the organic layer from outside of the vacuum chamber in real-time is desired for monitoring the deposition process. Typically, imaging from large stand-off distances results in low spatial resolution because of diffraction blur, and it is difficult to attain an adequate industrial-level measurement. The proposed method offers a new superresolution single-image using a conversion formula between two different optical systems obtained by a deep learning technique. This formula converts an image measured at long distance and with low-resolution optics into one image as if it were measured with high-resolution optics. The performance of this method is evaluated with various samples in terms of spatial resolution and measurement performance.